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  • 1
    Electronic Resource
    Electronic Resource
    Investigation of the Substrate (1995)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 47-48 (July 1995), p. 485-490 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/25/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.47-48.485.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Temperature and strain dependence of the roughening transition in III-V semiconductor and SiGe epitaxial growth (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 811-816 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental and theoretical evidence is given for the occurrence of a temperature and strain dependent roughening transition from two dimensional (2-D) monolayer to 3-D island growth in strained III-V compound ternary alloys and GeSi. For sufficiently large strain energy values the shape of the transition curve was found to follow a T∼ε−2f relationship, as predicted from classical nucleation theory arguments, where T is the growth temperature and εf the areal misfit strain energy. The asymptotic behavior in the zero strain energy regime could be reproduced by an empirical curve of a more complex expression. The transition curve appears to separate routes of strain relief in the above systems, which were found to predominantly follow 3-D island formation in the higher, and misfit dislocation formation in the lower growth temperature/strain regime. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360270
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  • 3
    Electronic Resource
    Electronic Resource
    Stress distributions and defect nucleation in buried heterostructure laser diodes (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3392-3395 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shear stress distributions, arising at the corners of the active region of buried heterostructure laser diodes, are calculated for a given mismatch and various dimensions of the buried stripe and also for a single and a multiple quantum well structure. The locations of high stresses are compared to the nucleation sites of shear stress induced defects, as observed by transmission electron microscopy in real lasers. The implications of the defects are illustrated and discussed for the case of an overstress tested diode as well as possibilities to prevent the defect formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356098
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  • 4
    Electronic Resource
    Electronic Resource
    Growth of SiGe quantum wires and dots on patterned Si substrates (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1959-1963 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiGe/Si quantum well layers are selectively grown by low pressure chemical vapor deposition on patterned Si substrates. Transmission electron microscopy (TEM) shows that the growth rate of SiGe in convex corners between different surface planes is at least ten times higher than the growth rate observed on (001) planes. This high growth rate leads to the formation of quantum wires and dots between such facets. Photoluminescence (PL) spectra of square and rectangular patterns, bounded by quantum wires, ranging in size from 300μm down to 500nm are taken. The observed energy shifts of the (001) quantum well PL–peaks are explained by surface diffusion of Ge adatoms into the quantum wires. A surface diffusion model is used to obtain a Ge diffusion length of λ=2.5±0.6 μm at 700°C. Thus, a method for the determination of surface diffusion lengths in strained layer epitaxy is introduced. For SiGe layers grown above the Stranski–Krastanow critical thickness for three dimensional (3D) growth, a competition between the SiGe wires in the interfacet corners and the SK islands on the (001) planes is observed. In squares as large as 2×2 μm2 the SiGe wires lead to a suppression of 3D growth on the (001) plane altogether, as observed by TEM and PL. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358830
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  • 5
    Electronic Resource
    Electronic Resource
    Gas-handling system of a gas chromatograph for the purity control of tritium gas (1987)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 58 (1987), S. 1116-1117 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The gas-handling system of a simple, inexpensive gas chromatograph is described suitable for the safe and fast purity analysis of tritium gas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139619
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  • 6
    Electronic Resource
    Electronic Resource
    The aging of niobium and tantalum tritides: Evolution of hardness in comparison with other properties (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 117-121 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vickers hardness measurements on niobium and tantalum tritides of initial composition NbT0.0225 and TaT0.097, respectively, performed over the first 20 months after T charging, are reported and interpreted. For both tritides, the hardness increases monotonically, but in a decelerating rate, with the 3 He concentration built up upon T transmutation. At given 3 He concentration, the increase per unit 3 He concentration is stronger for Nb than for Ta. To interpret the observed hardness evolution, existing hardening theories are adjusted to the present microstructural situations. It is concluded that the microstructure developing on 3 He precipitation is more disperse in the Nb tritide than in the Ta tritide. These findings are supported by conclusions drawn previously from swelling, acoustic emission, and x-ray diffraction measurements of these materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342584
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  • 7
    Electronic Resource
    Electronic Resource
    Lateral confinement by low pressure chemical vapor deposition-based selective epitaxial growth of Si1−xGex/Si nanostructures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6709-6715 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Among the growth approaches being considered currently to realize quantum dots and quantum wires is the selective epitaxial growth on patterned substrates. With this technique the feature size and geometry are mainly limited by the lithographic process. With optical lithography we achieved a lateral dimension of ≥0.4 μm. Therefore, to further reduce the lateral dimension, but still using optical lithography, the tendency toward facet formation during selective epitaxial growth was investigated. Si0.70Ge0.30 multiple quantum well structures with Si0.935Ge0.065 spacers and buffers were deposited on (001) Si. The buffer thickness was varied so as to achieve facet junction. While on large areas the Si0.935Ge0.065 buffer was relaxed, for dots ≤300 μm or narrower the structures remained strained even for buffer thicknesses exceeding by a factor of two–three the critical thickness of large area. In dots and wires where facet junctioning has taken place a rounded region between facets (approximately 50 nm broad) in the quantum well layers was observed. In wires oriented parallel to 〈100〉 sidewalls self-organized wire formation and vertical correlation of these growth induced wires was observed. The photoluminescence of all dots and wires down to the lowest achieved dimension and including the self-organized wires is strong, with the integral intensity normalized to the surface coverage for 100 nm dots exceeding by a factor of 50 the emission from unpatterned areas. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365212
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  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescence and microstructure of self-ordered grown SiGe/Si quantum wires (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1888-1890 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Employing self-ordered growth in convex corners of nonplanar Si substrates, SiGe quantum wires of approximately 30 nm lateral dimension were fabricated. Photoluminescence spectra of these structures are dominated by transitions originating from the quantum wires at measurement temperatures above 20 K. The energetic positions of the quantum wire transitions are in good agreement with Ge concentrations measured by spatially resolved energy dispersive x-ray spectroscopy using a scanning transmission electron microscope. We find that the Ge concentration inside the wire is considerably lower than the nominal value for growth on planar parts of the substrate. In addition we find a pronounced gradient in the Ge concentration of the wire. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114366
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  • 9
    Electronic Resource
    Electronic Resource
    Photoluminescence and electroluminescence of SiGe dots fabricated by island growth (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 445-447 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of photo- and electroluminescence of SiGe dots buried in Si and compare them with structures containing smooth SiGe layers. The SiGe dot structures were fabricated by low-pressure chemical vapor deposition using the Stranski–Krastanov growth mode (island growth). We show that the localization of excitons in the dots leads to an increase of the luminescence efficiency at low excitation compared to smooth SiGe layers (e.g., quantum wells). At higher excitation the efficiency decreases which is attributed to nonradiative Auger recombination processes in the dots. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114051
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  • 10
    Electronic Resource
    Electronic Resource
    Suppression of wavy growth in metalorganic vapor phase epitaxy grown GaInAs/InP superlattices (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2101-2103 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of growth temperature, V–III partial pressure ratio in the gas phase, and the nature of the carrier gas on the morphology of lattice matched InGaAs/InP multiple quantum well stacks are investigated. Preliminary results of an extension of this study to strained InGaAs/InP systems are presented. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116893
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