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  • American Institute of Physics (AIP)  (3)
  • Geological Society (of London)
  • 1
    Electronic Resource
    Electronic Resource
    Kinetic and structural study of the epitaxial realignment of polycrystalline Si films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 638-647 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial realignment of undoped and As doped polysilicon films onto crystalline silicon substrates induced by high-temperature rapid-thermal annealing has been investigated. It is shown that the realignment mode and the kinetics of the process are intimately related to the microcrystalline structure of the layers under investigation, to the morphology of the native oxide film present at the interface, and to the presence of As atoms dispersed in the deposited layers. For layers having fine grain dimensions, compared to the film thickness, the realignment takes place via the motion of the crystal-polysilicon interface towards the surface. This is observed in undoped layers and in layers which have been subjected to a high-temperature anneal before As doping. The preimplant anneal disrupts the interfacial oxide film and reduces the thermal cycle needed to complete the realignment of the polysilicon layers. In layers which have not experienced any thermal treatment before As doping, it is seen that the grain size first increases to dimensions on the order of the film thickness, and the realignment transformation then proceeds by lateral growth of epitaxial columns in a manner similar to secondary grain growth. The kinetics of both realignment modes are thermally activated and the atomic limiting processes have been tentatively identified to be As diffusion in bulk Si for As doped layers and Si self diffusion for undoped films. The effect of the microcrystalline structure on the realignment kinetics is attributed to its relationship with the driving force governing the realignment transformation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351348
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Realignment of As doped polycrystalline Si films by double step annealing (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2507-2509 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The realignment by rapid thermal annealing of polycrystalline silicon layers deposited onto 〈100〉 Si substrates can occur either through the planar movement of the interface towards the surface or through the lateral growth of columnar epitaxial islands. An anneal at 1075 °C for 15 s, followed by As implantation, is shown to cause planar growth even at subsequent anneal temperatures as low as 900 °C. In contrast, the direct annealing of As implanted samples induces columnar realignment. Further, the As redistribution throughout the polycrystalline layers and its diffusion in the crystalline substrate is considerably reduced in the case of the double step annealing. The different regrowth modes are related to the morphology of the interfacial oxide layer and to the microcrystalline structure of the polycrystalline layers during the initial stages of the realignment process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105935
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  • 3
    Electronic Resource
    Electronic Resource
    Size effects in the epitaxial realignment of polycrystalline silicon films onto Si substrates (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1895-1897 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial realignment of As-doped polycrystalline silicon layers has been investigated by varying the dimensions of the contact area with the crystalline silicon substrate. Rectangular strips of width in the 0.2–100 μm range and length in the mm range were used. In the 1–100 μm strips the realignment proceeds by the two-dimensional growth of epitaxial columns, while in the 0.2–0.3 μm strips by the one-dimensional growth. The experimental realigned fractions quantitatively follow the trend predicted by the classical model of nucleation and growth in two and one dimension, respectively. The growth kinetics is slowed down in the small width geometry and the thermal budget to realign the films increases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109535
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  • 4
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    Characterization of ore-forming systems - advances and challenges (2018)
    Geological Society (of London)
    Details
    Publication Date: 2018-04-25
    Description: Economically viable concentrations of mineral resources are uncommon among the predominantly silicate-dominated rocks in Earth's crust. Most ore deposits that were mined in the past or are currently being extracted were found at or near Earth's surface, often serendipitously. To meet the future demand for mineral resources, exploration success hinges on identifying targets at depth, which, on the one hand, requires advances in detection and interpretation techniques for geophysical and geochemical data. On the other hand, however, our knowledge of the chain of events that lead to ore deposit formation is limited. As geoscience embraces an integrated Earth systems approach, considering the geodynamic context of ore deposits can provide a step change in understanding why, how, when and where geological systems become ore-forming systems. Contributions to this volume address the future resources challenge by: (i) applying advanced microscale geochemical detection and characterization methods; (ii) introducing more rigorous 3D Earth models; (iii) exploring critical behaviour and coupled processes; (iv) evaluating the role of geodynamic and tectonic setting; and (v) applying 3D structural models to characterize specific ore-forming systems.
    Print ISSN: 0305-8719
    Electronic ISSN: 2041-4927
    Topics: Geosciences
    Published by Geological Society (of London)
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  • 5
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    Metamorphic evolution of the Ilomantsi greenstone belt in the Archaean Karelia Province, eastern Finland (2016)
    Geological Society (of London)
    Details
    Publication Date: 2016-10-14
    Description: The Ilomantsi greenstone belt is a Neoarchaean, c. 2.75–2.70 Ga volcanic–sedimentary complex in which metamorphic grade increases from staurolite grade in the SW of the belt to sillimanite grade in the NE. In the staurolite zone, prograde garnet zoning indicates pressure and temperature increases from 480–500°C at 2–4 kbar to 560–570°C at 6–7 kbar. Within the sillimanite zone temperatures peaked at 660–670°C at pressures of around 6 kbar. The U–Pb age determinations on monazite from the sillimanite zone yielded both Archaean and Proterozoic ages. One sample contains an exclusively Archaean monazite population of 2620±24 Ma, while another sample has two generations of monazite, with ages of 2664±33 Ma and 1837±13 Ma. The monazite data confirm that the Ilomantsi greenstone belt was metamorphosed simultaneously with the surrounding Neoarchaean migmatite complexes. The apparent clockwise PT path and medium P / T -type metamorphism are consistent with collisional tectonic settings, but the two distinct metamorphic events recorded by monazite indicate that a second, Palaeoproterozoic thermal event caused recrystallization and new mineral growth, in line with previous evidence from other isotopic systems. Accordingly, great care is necessary in defining metamorphic evolutionary P–T–t paths in rocks with complex mineral assemblages, to ensure correct identification of truly coeval mineral assemblages.
    Print ISSN: 0305-8719
    Electronic ISSN: 2041-4927
    Topics: Geosciences
    Published by Geological Society (of London)
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