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  • 1
    Electronic Resource
    Electronic Resource
    Strong ultraviolet photoluminescence from silicon oxide films prepared by magnetron sputtering (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 356-358 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intense ultraviolet photoluminescence centered at 370 nm was observed from magnetron-sputtered silicon oxide films after they were annealed at about 1000 °C in N2 atmosphere. This photoluminescence is found to be associated with the formation of nanocrystal silicon particles in the specially structured SiO2, which highly resembles the oxide layer of porous silicon. The luminescence centers at the interface between the nanocrystal silicon particles and the SiO2 matrix are responsible for the strong ultraviolet luminescence. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120735
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  • 2
    Electronic Resource
    Electronic Resource
    Comparison of transport scattering and single-particle relaxation times in modulation-doped heterostructures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 390-394 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transport scattering and single-particle relaxation times which characterize a two-dimensional electron system have been investigated by using thermal neutron irradiation. The ratios of transport scattering time to single-particle relaxation time are observed to vary from 1.7 to 7.8 depending on the electron density. A decrease in single-particle relaxation time is found while the transport scattering time increases as the electron concentrations increase. These phenomena are relevant to the Hall plateau broadening and enhancement of Shubnikov–de Haas oscillations in such an experiment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357086
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  • 3
    Electronic Resource
    Electronic Resource
    Atomic structure and defects in decagonal quasicrystals of Al62Cu20Co15Si3 (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 652-657 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nature of the atomic structure and the characteristics of both line and planar defects in decagonal quasicrystals of as-cast Al62Cu20Co15Si3 were studied by means of conventional diffraction contrast and high-resolution electron microscopy. Two types of dislocations were observed. The magnitude and direction of the Burgers' vector of type A dislocations and the Burgers' vector direction of type B dislocations were determined. The direction of the displacement vector of the planar faults was defined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353347
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  • 4
    Electronic Resource
    Electronic Resource
    The effect of annealing temperature on electrical properties of Pd/n-GaSb Schottky contacts (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 646-648 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal stability for Pd/n-GaSb Schottky contacts is analyzed and studied. At room temperature, Pd/n-GaSb Schottky diodes have better performance, but when the annealing temperature is increased to 300 and 450 °C for 30 min, Schottky contacts gradually become ohmic contacts. From the measurement of Rutherford backscattering spectroscopy and x-ray diffraction analysis, the result indicates that the interdiffusion between palladium and gallium forming Ga5Pd is the dominant factor for degrading properties of Schottky diodes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346793
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  • 5
    Electronic Resource
    Electronic Resource
    Inflow conditions for large-eddy simulations of mixing layers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 12 (2000), S. 935-938 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method to generate inflow boundary conditions for large-eddy simulations (LES) of turbulent free shear layers is presented. A time series of instantaneous velocity planes, with duration approximately equal to the integral time scale of the flow, is extracted from a periodic simulation and saved on disk. This signal is transformed into a periodic one, by using a conventional windowing technique, and is re-used in the actual simulation as many times as required to obtain converged statistics. The method is applied in a LES of a spatially developing turbulent mixing layer. It is shown that the periodicity induced by the inflow signal decays rapidly in about 25% of the domain, and that the length of the period has small effect on the statistics, which agree well with the reference experimental data. The method appears to be a cost-effective strategy in the generation of inflow data in a large variety of flows. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.870346
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  • 6
    Electronic Resource
    Electronic Resource
    Critical current and flux pinning near Tc of a YBa2Cu3O7 thin film (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2461-2463 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The voltage V versus current I of a high-quality YBa2Cu3O7−x thin film with zero-resistance temperature equal to 90.8 K was measured at temperatures near Tc (85, 87, and 90 K, respectively) under different magnetic fields (0–7 T). A significant result is that the critical-current density of the film reached 1.37×104 A/cm2 (zero field) even at 90 K, implying that strong pinning centers exist in our sample. However, a small applied magnetic field will diminish the critical-current densities remarkably. The pinning-force densities are found to follow Kramer's scaling law in both perpendicular and parallel directions of the magnetic fields to the c axis of the film. A possible influence of thermally activated flux creep on the pinning mechanism is confirmed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349400
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of trimethylantimonide/triethylgallium ratios on epilayer properties of gallium antimonide grown by low-pressure metalorganic chemical vapor deposition (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6383-6387 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped GaSb epitaxial layers were grown on (100) GaSb substrates by low-pressure metalorganic chemical vapor deposition. The trimethylantimonide/triethylgallium mole fraction (V/III) ratios were varied at a growth temperature of 600 °C and growth pressure of 100 Torr. It was found that the layer morphologies were strongly dependent on V/III ratios. The mirrorlike surface can be easily obtained under the V/III ratio in the range of 6–8. The growth rate was about 1.75 μm/h. The epitaxial layers were characterized by photoluminescence(PL) measurements and electron diffraction patterns. The bound-exciton peaks and strong acceptor band peak in the PL spectra were observed from the sample grown under a V/III ratio of 6.84. PL peak intensity was found to be a function of the V/III ratios. I-V characteristics of the p-n diodes fabricated on the sample of undoped GaSb/GaSb:Te was measured. The undoped acceptor carrier concentration and mobility were 9.47×1016 cm−3 (300 K), 1.60×1016 cm−3 (77 K), 275.3 cm2 /V s (300 K), and 491.6 cm2/V s (77 K), respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346886
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  • 8
    Electronic Resource
    Electronic Resource
    Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 μm GaInNAs three-quantum-well laser diodes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1051-1053 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report organometallic vapor-phase epitaxy (OMVPE) growth and optical characteristics of 1.17–1.20 μm double-heterostructure laser diodes with three Ga0.7In0.3N0.003As0.997 (7 nm)/GaAs(10 nm) quantum wells (GaInNAs/GaAs QWs). Three GaInNAs/GaAs QWs were successfully grown by OMVPE using dimethylhydrazine as the N precursor. Strong room-temperature photoluminescence at the 1.17–1.19 μm regime with a full width at half maximum of 33 meV has been routinely achieved. By using three GaInNAs/GaAs QWs as the gain medium of the GaInNAs laser, room temperature operation with a threshold current density of 1.2 kA/cm2 has been successfully demonstrated. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124593
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  • 9
    Electronic Resource
    Electronic Resource
    Planar semiconductor lasers using the photoelastic effect (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7442-7447 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Planar separate-confinement, double-heterostructure, single-quantum-well photoelastic GaAs/AlGaAs lasers have been fabricated using a novel yet practical processing technique involving thin-film surface WNi stressors for waveguiding and ion implantation for isolation. A p++-GaAs contact layer regrown by chemical beam epitaxy has been used to improve the WNi ohmic contacts to the lasers. Even without bonding on heat sinks, these planar photoelastic lasers operate at continuous wave at room temperature. The lowest threshold is 29 mA for a cavity length of 178 μm and a stressor width of 5 μm. The internal quantum efficiency above threshold is 75%. The characteristic temperature is 114 K. The main waveguiding mechanism of the photoelastic lasers is determined to be weak index guiding with the beam waist in the junction plane measured 10 μm behind the end facet. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367988
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  • 10
    Electronic Resource
    Electronic Resource
    Investigation of interface intermixing and roughening in low-temperature-grown AlAs/GaAs multiple quantum wells during thermal annealing by chemical lattice imaging and x-ray diffraction (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3491-3493 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of thermal annealing on the interface quality in undoped, AlAs/GaAs multiple quantum well (MQW) structures grown at a low substrate temperature (310 °C) by molecular beam epitaxy has been investigated using chemical lattice imaging and high resolution x-ray diffraction. The low-temperature-grown MQW is of high crystalline quality comparable to the standard-temperature-grown MQW. However, significant interface roughening and intermixing occurs at the quantum well heterointerface when the structures are annealed beyond 700 °C. The effective activation energy for interdiffusion is estimated as 0.24±0.07 eV. The structural properties observed here suggest that the excess arsenic associated with the low-temperature growth substantially enhances the diffusion of column III vacancies across an interface, which leads directly to intermixing of Al and Ga. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115257
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