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  • 1
    Electronic Resource
    Electronic Resource
    Interaction of iron with a grain boundary in boron-doped multicrystalline silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3725-3728 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The article presents a study of the interaction of iron with a grain boundary in boron-doped multicrystalline silicon. The sample was intentionally contaminated with iron to a few 1014 cm−3 and investigated by the electron-beam-induced-current technique (measurement of minority-carrier diffusion length, quantitative imaging) in the temperature range 80–300 K. The measurements were carried out for two different states of iron in the sample: (i) iron paired with boron, i.e., as FeB, and (ii) iron as interstitial iron Fei. The differences between diffusion lengths for these two states were used to estimate the iron concentration. The analysis of the data revealed a pronounced iron profile around the grain boundary, indicating gettering of about 4×1011 iron atoms per cm2. The recombination velocity of the grain boundary is about 5×105 cm s−1 at 300 K and is not changed by the FeB destruction treatment. The temperature dependence of the iron-related diffusion length components is discussed and found to be in satisfactory agreement with what is expected from Shockley–Read–Hall theory. Further, the diffusion length analysis revealed also a strong recombination channel of unidentified origin. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358611
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  • 2
    Electronic Resource
    Electronic Resource
    Formation of interface layers in GaxIn1−xAs/InP heterostructures: A re-evaluation using ultrathin quantum wells as a probe (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1501-1510 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the metalorganic vapor phase epitaxy growth of ultrathin GaInAs/InP and GaAs/InP quantum well (QW) structures using photoluminescence (PL) spectra as a probe for interface effects. In parallel we have also studied InAsxP1−x "interface QWs'' formed by simply exposing InP to AsH3. We see a correlation between QW properties (PL peak position, effective thickness, PL half-width) and the surface phase during the growth of the QW material. For GaAs QWs grown under conditions where typically the As-excess c(4×4)/d(4×4)- or (1×2)-like (with As double layers) surface reconstructions, we find a strong red-shift of the PL peak positions. The red-shift becomes smaller the closer the growth conditions come toward the border to the (2×4) reconstruction (with only one As-termination layer). We thus conclude that the surface itself is one source for As carryover. For GaInAs QWs a boundary between an As-excess/no As-excess surface reconstruction seems to exist at higher AsH3/lower T values. Near to this border GaInAs QWs can be deposited which show PL-half-widths between 7 and 11 meV even for the range of 1–5 ML nominal thickness. The P/As replacement reaction at the lower interface is for short AsH3 interaction times (≤1 s) restricted to less than 1 ML and contributes a relatively constant amount to the effective thickness of the QW. Similarly, we show that InAsxP1−x interface QWs formed by short time interaction of InP and AsH3, originate less from a reaction into the depth of the InP, but more from a consumption of the As which is adsorbed onto the InP surface after the AsH3 treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356385
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  • 3
    Electronic Resource
    Electronic Resource
    Enlarged quantum well in a semiconductor superlattice studied by depth resolved grazing incidence x-ray diffraction (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3144-3148 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A lattice matched {InP/GaInAs}30/InP[001] superlattice containing an enlarged quantum well (EQW) was investigated by means of grazing incidence x-ray diffraction (GID) using synchrotron radiation. The in-plane (220) rocking curve was measured choosing a grazing angle for the incident beam with respect to the surface, αi. At the angular position of maximum intensity we recorded the intensity distribution of the reflected beam normal to the surface (rod scan) using a position sensitive detector. The rod contains information about the density variation towards the surface normal. Instead of a single superlattice Bragg peak we found a double peak which can be explained by the phase shift of the partial x-ray waves scattered at the two superlattices sandwitching the EQW. For fixed αithe intensity ratio of the two peaks is a measure of the EQW thickness. An additional advantage of the GID technique is that this ratio can be modified by changing the penetration depth of the probing x-ray beam into the sample. This is performed by keeping αi smaller or larger than the critical angle for total external reflection. The EQW thickness and its position below the surface is determined by simulation of the recorded rod scans using the kinematic approach of the GID. Both quantities are obtained with monolayer accuracy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360001
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  • 4
    Electronic Resource
    Electronic Resource
    Recombination properties of structurally well defined NiSi2 precipitates in silicon (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 911-913 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report first results on the recombination properties of structurally well defined NiSi2 precipitates in n-type silicon. Under the conditions applied, precipitates form without the occurrence of punched out dislocations or any other secondary defects. We find that the minority-carrier diffusion length (LD) measured by electron beam induced current (EBIC) is related to the precipitate density NV and LD (approximately-equal-to) 0.7 × NV−1/3. EBIC investigations of individual precipitates reveal contrasts up to 40% demonstrating NiSi2 particles to be efficient recombination centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104474
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  • 5
    Electronic Resource
    Electronic Resource
    Tuning of the single-particle relaxation time of a high mobility electron gas in a Ga0.25In0.75As/InP quantum well (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 243-245 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two different scattering mechanisms determine the momentum relaxation time, τ, and the single particle relaxation time, τs, of the electrons in a modulation doped Ga0.25In0.75As/InP quantum well. We show that τ is mainly limited by alloy disorder scattering, while τs is determined by the remote ionized impurity scattering rate. This means that the Ga0.25In0.75As/InP material system offers the unique possibility of tuning τs by varying the distance between the modulation doped layer and the two-dimensional electron gas, while τ is kept constant. The variation of τs can thus be monitored, for example, by observing the appearance of spin-split Landau levels, at different magnetic fields, as a function of spacer layer width. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118378
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  • 6
    Electronic Resource
    Electronic Resource
    Comment on "Nanoscale InP islands embedded in InGaP'' [Appl. Phys. Lett. 66, 361 (1995)] (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1166-1167 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114996
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  • 7
    Electronic Resource
    Electronic Resource
    Single-monolayer quantum wells of GaInAs in InP grown by metalorganic vapor phase epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1128-1130 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaInAs/InP quantum wells differing in thickness between 1 and 20 monolayers (1 monolayer≈2.93 A(ring)) have been grown by low-pressure (50 mbar) metalorganic vapor phase epitaxy and investigated by 2 K photoluminescence. To our knowledge this is the first observation of the one monolayer quantum well. Well-resolved photoluminescence peaks were observed and were attributed to recombination of excitons bound to quantum wells of defined monolayer thickness. The growth rate could be adjusted to produce a one monolayer quantum well. Its photoluminescence peak was observed at 1.245 eV, corresponding to a quantum confinement shift of 434 meV. The full width at half maximum of this peak was only 8 meV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102589
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  • 8
    Electronic Resource
    Electronic Resource
    Nitrogen pair luminescence in GaAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1451-1453 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the first observation of different nitrogen pair complexes in GaAs. These complexes, which have been searched for since the '60s, are studied under the application of hydrostatic pressure. By carefully tuning the pressure, we make one after the other of the NNi pairs (1≤i≤10) appear in the band gap of GaAs and then become the major exciton recombination channel. We compare our results for nitrogen states in GaAs with the classical case of NNi excitons in GaP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102495
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  • 9
    Electronic Resource
    Electronic Resource
    Quantum transport in high mobility modulation doped Ga0.25In0.75As/InP quantum wells (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2112-2122 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on edge state transport in a ternary material, a modulation-doped InP/Ga0.25In0.75As/InP quantum well, where the electron transport takes place in the highly strained Ga0.25In0.75As layer. The electron mobility is, even though fundamentally limited by alloy-disorder scattering, determined by the two-dimensional electron concentration. By varying the distance between the modulation-doped layer and the two-dimensional electron gas we influence the single particle relaxation time but not the electron mobility. Special attention is paid to the effect of dislocation formation in the conducting Ga0.25In0.75As layer. In addition to the quantum Hall and the Shubnikov–de Haas effect a strong, nonlocal transport behavior, which is maintained after illumination, is observed. This effect is explained by the low defect density and the Fermi level pinning on the etched Ga0.25In0.75As surface, at an energy close to the same as the Fermi energy of the two-dimensional electron gas. Furthermore, overshoot effects of the quantum Hall plateaus introduced by the high and varying effective (many-body) g value are investigated. The g value is further addressed in an experiment on a wet etched quantum wire in which values enhanced up to around 45 were found. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368272
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  • 10
    Electronic Resource
    Electronic Resource
    Modeling of poling behavior of ferroelectric 1-3 composites (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5040-5047 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Piezoelectric 1-3 composites are typically prepared from a polymer matrix and an unpoled Pb(ZrxTi1−x)O3 (PZT) based ceramic. During the subsequent poling process the PZT cannot strain freely due to the clamping by the surrounding polymer, which after poling results in the occurrence of residual mechanical stress in the composite. The poling process is investigated theoretically by a nonlinear finite element method modeling, which takes into account the ferroelectric and ferroelastic properties of PZT ceramics. Furthermore, an analytical model is developed, which predicts the remanent strain of the composite and the residual mechanical stress. The compressive residual mechanical stress acting on the PZT in the poling direction increases continuously with decreasing volume content va of the PZT ceramic. For values of va higher than about 20% it is lower than half of the coercive stress necessary to cause a mechanical depolarization. For va lower than 20% the residual stress rises rapidly. It may cause a mechanical depolarization of the PZT ceramic for va〈11%. With increasing volume content the longitudinal and the transversal components of the remanent strain increase monotonously in similar way like the corresponding linear effective piezoelectric coefficients. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1359164
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