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  • 1
    Electronic Resource
    Electronic Resource
    Enzymatische reduktion von sulfat zu sulfid
    Amsterdam : Elsevier
    BBA - Biochimica et Biophysica Acta 30 (1958), S. 650-651 
    Details
    ISSN: 0006-3002
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Medicine , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0006-3002(58)90122-7
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  • 2
    Electronic Resource
    Electronic Resource
    Reduction of active sulfate (PAPS) by dihydrolipoic acid as substrate
    Amsterdam : Elsevier
    Biochemical and Biophysical Research Communications 3 (1960), S. 140-142 
    Details
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0006-291X(60)90209-6
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  • 3
    Electronic Resource
    Electronic Resource
    Erratum: "Depth profiling of the minority-carrier diffusion length in intrinsically gettered silicon by electron-beam-induced current'' [J. Appl. Phys. 63, 1569 (1988)] (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3330-3330 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342528
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  • 4
    Electronic Resource
    Electronic Resource
    Influence of copper contamination on recombination activity of misfit dislocations in SiGe/Si epilayers: Temperature dependence of activity as a marker characterizing the contamination level (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4573-4583 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The technique of electron-beam-induced current (EBIC) has been used to study the recombination activity of misfit dislocations in Si/SiGe epilayers. EBIC contrast measurements recorded as a function of temperature (T=80–300 K), c(T), were found to show a completely altered character following copper contamination of SiGe epilayers. In as-grown "clean'' material the dislocations were found to exhibit a very small contrast at low temperature only. For a Cu contamination of about 1 ppb the contrast increased markedly at low temperatures but remained invisible near room temperature. This c(T) behavior can be attributed to shallow trap levels at the dislocations. For a Cu contamination around 15 ppb the majority of dislocations exhibited contrast in the whole temperature range, being a consequence of near-midgap centers at the dislocation. Hydrogen plasma treatment of these dislocations was observed to passivate the contrast near room temperature but did not show a pronounced effect on the contrast at low temperatures, so that the very small dislocation contrast found for clean material was not restored by hydrogen. A Cu contamination treatment in the ppm range resulted in a dramatic increase of the contrasts in the whole temperature range. Investigations by transmission electron microscopy (TEM) revealed in that material copper precipitates connected with the misfit dislocations. In contrast to the low-contaminated material no direct decoration of the dislocations could be observed. TEM images revealed that the EBIC dislocation line contrast corresponded to bundles of up to 15 individual dislocations. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359802
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  • 5
    Electronic Resource
    Electronic Resource
    Interaction of iron with a grain boundary in boron-doped multicrystalline silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3725-3728 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The article presents a study of the interaction of iron with a grain boundary in boron-doped multicrystalline silicon. The sample was intentionally contaminated with iron to a few 1014 cm−3 and investigated by the electron-beam-induced-current technique (measurement of minority-carrier diffusion length, quantitative imaging) in the temperature range 80–300 K. The measurements were carried out for two different states of iron in the sample: (i) iron paired with boron, i.e., as FeB, and (ii) iron as interstitial iron Fei. The differences between diffusion lengths for these two states were used to estimate the iron concentration. The analysis of the data revealed a pronounced iron profile around the grain boundary, indicating gettering of about 4×1011 iron atoms per cm2. The recombination velocity of the grain boundary is about 5×105 cm s−1 at 300 K and is not changed by the FeB destruction treatment. The temperature dependence of the iron-related diffusion length components is discussed and found to be in satisfactory agreement with what is expected from Shockley–Read–Hall theory. Further, the diffusion length analysis revealed also a strong recombination channel of unidentified origin. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358611
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  • 6
    Electronic Resource
    Electronic Resource
    Depth profiling of the minority-carrier diffusion length in intrinsically gettered silicon by electron-beam-induced current (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1569-1579 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new electron-beam-induced current method is proposed for the depth profiling of nonuniform minority-carrier diffusion lengths in semiconductors. An induced current scan is obtained on a Schottky diode formed on the surface of a beveled sample and converted into a collection efficiency profile η(z). From this profile the depth distribution of the diffusion length L(z) is deduced using a direct reconstruction algorithm. To check consistency, a propagation-matrix based method is developed to calculate η(z) for arbitrary L(z). The model underlying these measurements, in its more general form, holds for an extended generation and includes the presence of the depletion layer. The proposed method is tried both on artificial data and experimental η(z) profiles obtained in intrinsically gettered silicon samples. The results show, in particular, that the trend of L(z) does not, in general, follow that of η(z). The connection between charge-collection efficiency and the diffusive component of the reverse current of a diode with nonuniform L(z) is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339942
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  • 7
    Electronic Resource
    Electronic Resource
    Cross-sectional electron-beam-induced current analysis of the passivation of extended defects in cast multicrystalline silicon by remote hydrogen plasma treatment (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 697-699 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cross-sectional and temperature-dependent measurements of the electron-beam-induced current reveal the depth profile of the recombination activity of grain boundaries and intragrain dislocations in cast multicrystalline Si. After remote hydrogen plasma treatment for 1 h at 310 °C, defects are passivated down to a depth of 100 μm. Even the activity of crystal defects exhibiting small or not detectable room temperature contrast is further reduced by hydrogenation. We interpret the experimental data in terms of a recently developed model, which relates the temperature behavior of the recombination activity to the density of (contaminant-induced) deep levels at the defects. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125865
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  • 8
    Electronic Resource
    Electronic Resource
    Investigation of the recombination activity of misfit dislocations in Si/SiGe epilayers by cathodoluminescence imaging and the electron beam induced current technique (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2085-2087 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Misfit dislocations in as-grown and Ni-contaminated Si/SiGe epilayers have been characterized by cathodoluminescence (CL) spectroscopy, cathodoluminescence imaging, and the electron beam induced current technique (EBIC). Dislocations in the as-grown layers had no radiative recombination (D bands) and no detectable room temperature EBIC contrast. Following Ni contamination the D bands were observed and the EBIC contrast increased. CL dark line contrast is observed by monochromatic imaging of the Si substrate luminescence. The CL dark line contrast was observed from all the dislocations, whether contaminated or as grown. The CL dark line contrast and EBIC contrast show a 1:1 correspondence of the nonradiative recombination at the misfit dislocation and also a semiquantitative agreement with the variation in measured contrast of the individual dislocations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110600
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  • 9
    Electronic Resource
    Electronic Resource
    Recombination properties of structurally well defined NiSi2 precipitates in silicon (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 911-913 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report first results on the recombination properties of structurally well defined NiSi2 precipitates in n-type silicon. Under the conditions applied, precipitates form without the occurrence of punched out dislocations or any other secondary defects. We find that the minority-carrier diffusion length (LD) measured by electron beam induced current (EBIC) is related to the precipitate density NV and LD (approximately-equal-to) 0.7 × NV−1/3. EBIC investigations of individual precipitates reveal contrasts up to 40% demonstrating NiSi2 particles to be efficient recombination centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104474
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  • 10
    Electronic Resource
    Electronic Resource
    Influence of hydrogen on the electrical and optical activity of misfit dislocations in Si/SiGe epilayers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2804-2806 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence spectroscopy and electron-beam-induced current (EBIC) technique have been used to characterize misfit dislocations in Si/SiGe epilayers following hydrogen plasma treatment (T=200–500 °C). Low temperature EBIC measurements showed that the majority (90%) of shallow levels associated with misfit dislocations were not passivated, whereas deeper midgap levels are readily passivated. The dislocation (D bands) related luminescence features were all reduced in intensity following hydrogen treatment; at T=300 °C the D1 was preferentially passivated and could no longer be observed, whereas the other D bands although reduced in intensity could still be observed. Depassivation experiments showed that following posthydrogenation annealing at 600 °C the deep levels passivated as measured by EBIC and the D bands are regenerated. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112571
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