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  • American Institute of Physics (AIP)  (14)
  • Wiley-Blackwell  (12)
  • 1990-1994  (20)
  • 1980-1984  (6)
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  • 1
    Electronic Resource
    Electronic Resource
    Recording experiments in magneto-optical disks using ultrathin Co/Pt and Co/Pd media (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1069-1071 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magneto-optical media using ultrathin Co/Pt and Co/Pd films were prepared on 2P (photopolymer) glass substrates with a double-layer disk structure. Thermomagnetic writing was successfully made in the magneto-optical disks by the relatively low laser power above 3 mW. The values of the C/N ratio were 50 dB for the Co/Pt disk and 45 dB for the Co/Pd disk at a bit length of 5 μm. Clear and regular bit domains were observed even in the shorter recorded bit length.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102568
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  • 2
    Electronic Resource
    Electronic Resource
    Maskless InP wire formation on planar GaAs substrates (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 499-501 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Maskless growth of InP wires on planar (100)GaAs substrates by hydride vapor phase epitaxy is demonstrated. The selectivity of the growth was achieved by using focused ion beam to modify locally the substrate surface. The nucleation of deposited InP is enhanced on the exposed areas leading to the selectivity. Continuous 200 μm long wires with submicron cross-sectional dimensions were obtained in a single growth process. Cross-sectional transmission electron microscope micrographs show that the number of dislocations in the wires is relatively low, indicating the suitability of the present method for fabrication of nanoscale structures, e.g., quantum wires.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111109
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  • 3
    Electronic Resource
    Electronic Resource
    Low-temperature synchrotron-radiation-excited etching of silicon dioxide with sulfur hexafluoride adsorption (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4680-4685 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultralarge-scale integration circuits now require innovative microfabrication processes in order to achieve gigabit-scale integration. One approach is to use soft x rays, because they can give excellent spatial resolution by their short wavelength and high-reaction selectivity by core-electron excitation. Synchrotron-radiation (SR) -excited etching of SiO2 and Si is studied from the viewpoints of pattern replicability and analysis of etching selectivity between two layers. Deep-submicron patterns of SiO2 are formed by cooling the specimen with liquid N2 and adsorbing SF6 reaction gas during SR irradiation. Photon-stimulated desorption ions from SF6-adsorbed SiO2 and Si surfaces are first investigated. As a result, ion species such as SiF+n and SO+n, which are etching products from the surface, are obtained only from SiO2, and this selective etching of SiO2 is also investigated by x-ray photoelectron spectroscopy. In this selective etching mechanism, constraint of Si-etching by passivation of photofragment S+ ions is most likely. The higher selectivity of this reaction can be used not only for bulk SiO2 etching, but also for Si-surface cleaning by eliminating native oxide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355921
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  • 4
    Electronic Resource
    Electronic Resource
    Estimation of strength distribution of Nb3Sn in multifilamentary composite wire from change in superconducting current due to preloading (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 440-445 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bronze-processed multifilamentary Nb3Sn superconducting composite wires were loaded and then unloaded at room temperature, resulting in a large change in the critical current (Ic) and the upper critical magnetic field (Hc2) at 4.2 K: the Ic and Hc2 increased, reaching maximum and then decreasing with an increasing applied stress level. The changes in Ic and Hc2 below the loading stress to cause breakage of the Nb3Sn were described well from the viewpoint of the change in residual strain in Nb3Sn. When the applied stress was high enough to cause breakage of the Nb3Sn, the Ic was reduced seriously. From the reduction in Ic in such a case, the strength distribution of Nb3Sn was estimated by using the Weibull distribution function. The result indicated that the shape parameter for the Weibull distribution was 12 and the average strength was 1.02 GPa in the present samples. From the calculation of the residual strain at 4.2 K in combination with the estimated strength distribution of Nb3Sn, the change in Ic at 4.2 K as a function of applied stress at room temperature could be described well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355277
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  • 5
    Electronic Resource
    Electronic Resource
    XeCl laser ablative deposition and characterization of yttria-stabilized zirconia thin films on glass and CeO2-Sm2O3 (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 699-704 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films have been deposited by XeCl excimer laser ablation of a bulk yttria-stabilized zirconia (YSZ) target. The deposited thin films were characterized in terms of spatial distribution, composition, microstructure, and solid particulates on the film surface through deposition process control. The deposition of dense YSZ films, 0.5–2 μm thick, with an excellent adhesive property at 800 °C was performed on the CeO2-Sm2O3 substrate maintained at 500 °C under an O2 ambient of 5×10−2 Torr. The crystallinity of YSZ thin films was found to be promoted by post-deposition annealing. The YSZ film consisted of a cubic phase with predominant growth along the (200) plane.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352352
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  • 6
    Electronic Resource
    Electronic Resource
    Ultrathin Co/Pt and Co/Pd multilayered films as magneto-optical recording materials (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2136-2142 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co/Pt and Co/Pd multilayered films were prepared by two-source dc magnetron sputtering. The multilayers with thin Co layers, one to three atoms thick, exhibited a perfect squareness of Kerr loop and an enhancement of Kerr rotation when the total film thickness became below several hundred angstroms. These ultrathin films have a high Kerr rotation of 0.2°–0.45° and strong perpendicular magnetic anisotropy even in the very thin-film thickness. The figure of merit of the ultrathin Co/Pt films is superior to that of TbFeCo system at 780 nm and becomes larger at shorter wavelength. The ultrathin multilayers possess very high corrosion resistance, and the layered structure is thermally stable up to 400 °C. Consequently, the ultrathin Co/Pt and Co/Pd multilayered films can be new magneto-optical recording materials, especially for higher density recording using a shorter wavelength laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345548
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  • 7
    Electronic Resource
    Electronic Resource
    Film thickness dependence of magneto-optical and magnetic properties in Co/Pt and Co/Pd multilayers (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4429-4431 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co/Pt and Co/Pd multilayers were prepared by two source dc-magnetron sputtering. It was found that magneto-optical and magnetic properties of the multilayers were affected by total film thickness. Kerr rotation angle of the films was remarkably enhanced at the film thickness below several hundred angstroms. The theoretical calculation clarified that the increase of Kerr rotation was due to optical interference and multiple reflection. The shape of Kerr loop also depends upon the film thickness and a perfect squareness is attained only at the ultrathin region. The improvement in the squareness of Kerr loop can be explained by the change in the domain structure from a stripe domain to a single domain. These behaviors at the ultrathin region in the multilayers are suitable for new magneto-optical recording media.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344921
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  • 8
    Electronic Resource
    Electronic Resource
    The high-frequency oscillation of current and voltage in a plasma-focus discharge device (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 1504-1510 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The presence of a high-frequency ((approximately-greater-than)6 MHz) oscillation in the discharge current and voltage of a plasma-focus device is found experimentally and is explained by using equivalent circuit analyses. The occurrence of such an oscillation is attributed to the excitation of the resonant oscillation in the discharge circuit. It is also shown that the high-frequency response of the driver circuit, which consists of a capacitor bank and cables, plays an important role in determining the high-frequency behavior of the discharge current and voltage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142476
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  • 9
    Electronic Resource
    Electronic Resource
    Recording on Co/Pt magneto-optical disks using a 488-nm wavelength laser (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5133-5135 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co/Pt multilayer disks with a double-layer and a quadri-layer structure were prepared on a 2 P (photopolimerized) glass substrate with 1-μm-pitched grooves. The read/write characteristics of the disks were studied using Ar gas laser at a wavelength of 488 nm. It was confirmed that very small domains 0.3 μm in length were stably recorded. The carrier-to-noise ratio was 29 and 32 dB (30 kHz BW) at a mark length of 0.3 μm for double-layer and quadri-layer disks, respectively, being larger than that measured for a TbFeCo disk because of a higher figure of merit. In higher-density recording below 0.5-μm mark length, a quadri-layer disk shows a larger recording power margin than a double-layer disk due to the smaller expansion of domain with power, originating from the sharper thermal distribution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348988
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  • 10
    Electronic Resource
    Electronic Resource
    Effects of thermal annealing on porous silicon photoluminescence dynamics (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 940-942 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) spectra and decay dynamics were studied for the spontaneously oxidized porous Si with subsequent various thermal annealing procedures. The PL decay was highly nonexponential and well described by the stretched-exponential function. The PL lifetime was shorter for the higher PL photon energy, but at the same photon energy it decreased by an order of magnitude by the thermal annealing in N2 gas, in parallel with the large PL intensity decrease. This PL quenching upon the annealing is presumably ascribable to both the structural changes and dangling bond formations in porous Si, as suggested by ESR measurements and the annealing experiments in H2 gas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107735
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