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  • 1
    Electronic Resource
    Electronic Resource
    Recombination processes in strain-induced InGaAs quantum dots (1995)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1699-1703 
    Details
    ISSN: 0392-6737
    Keywords: Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) ; Localized single-particle electronic states (including impurities) ; III–V compounds and systems ; Photoluminescence ; Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary We have performed time-integrated and time-resolved photoluminescence experiments on high-quality stressor-induced InGaAs/GaAs quantum dots. The optical spectra of these dot structures exhibit large quantization effects together with remarkably low inhomogeneous broadenings of the respective excitonic transitions. Thus a detailed investigation of the relaxation and recombination dynamics within the distinct electronic dot states becomes feasible. We find that the initial relaxation of optically generated carriers down to the lowest dot states is very efficient. This fast thermalization is ascribed to Coulomb scattering between carriers confined in dot states and carriers located in the higher-energetic quantum well states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457266
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  • 2
    Electronic Resource
    Electronic Resource
    Selective growth of InGaAs on nanoscale InP islands (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1662-1664 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of an InGaAs quantum well on nanoscale InP islands by selective growth using metalorganic vapor phase epitaxy is demonstrated. The structures show intense low-temperature photoluminescence at 1.35 eV. The blueshift of the emission peak by increasing the excitation intensity suggests that the carriers are three-dimensionally confined. The insertion of quantum well into the islands allows a better control of the properties of structures fabricated by the self-organizing growth, a novel technique to realize nanoscale structures without using any lithographical process steps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112903
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  • 3
    Electronic Resource
    Electronic Resource
    Maskless InP wire formation on planar GaAs substrates (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 499-501 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Maskless growth of InP wires on planar (100)GaAs substrates by hydride vapor phase epitaxy is demonstrated. The selectivity of the growth was achieved by using focused ion beam to modify locally the substrate surface. The nucleation of deposited InP is enhanced on the exposed areas leading to the selectivity. Continuous 200 μm long wires with submicron cross-sectional dimensions were obtained in a single growth process. Cross-sectional transmission electron microscope micrographs show that the number of dislocations in the wires is relatively low, indicating the suitability of the present method for fabrication of nanoscale structures, e.g., quantum wires.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111109
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  • 4
    Electronic Resource
    Electronic Resource
    Self-organized InP islands on (100) GaAs by metalorganic vapor phase epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3768-3770 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of growth temperature, deposition rate, and substrate misorientation angle on size, density, and uniformity of InP islands grown on (100) GaAs by metalorganic vapor phase epitaxy is investigated. The density of InP islands is observed to remain constant as a function of growth temperature in the temperature range of 620–680 °C. Below 620 °C the island density increases with decreasing temperature. Above 605 °C a subset of islands having a uniform size is observed. The degree of uniformity depends largely on the deposition rate and the size of the uniform islands on the growth temperature. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115377
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  • 5
    Electronic Resource
    Electronic Resource
    Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2828-2830 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new fabrication process to create InGaAs/InP quantum wires on (100) GaAs substrates is demonstrated. The process is based on the selectivity of the growth of InP on lines created by focused ion beam bombardment, together with the selectivity of the growth of InGaAs on the InP wires. Intense photoluminescene is observed from the wires and the emission shows clear polarization parallel and perpendicular to the wires. Cathodoluminescene images confirm that the luminescence originates from the wires. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119015
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  • 6
    Electronic Resource
    Electronic Resource
    Red luminescence from strain-induced GaInP quantum dots (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3393-3395 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The strain of self-organized InP islands is used to induced quantum dots in near-surface GaInP/AlGaInP quantum wells. To obtain quantum dot luminescence in a widely tunable wavelength range of 630–700 nm, the composition and thickness of the GaInP quantum well is varied. The effect of different cap layer materials, i.e., GaAs, AlGaAs, GaInP, and AlGaInP on the InP island formation and quantum dot luminescence properties is investigated. The luminescence intensity ratio of the quantum dot peak to the quantum well peak is found to be highest when a GaAs cap is used. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117270
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  • 7
    Electronic Resource
    Electronic Resource
    Enhanced optical properties of in situ passivated near-surface AlxGa1−xAs/GaAs quantum wells (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2216-2218 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An epitaxial method for in situ passivation of epitaxial AlxGa1−xAs/GaAs surfaces is reported. The deposition of an ultrathin InP layer (about one monolayer) on the surface of AlxGa1−xAs/GaAs structures by metalorganic vapor phase epitaxy results in drastically reduced surface recombination. The effect is studied by low-temperature photoluminescence of near-surface Al0.22Ga0.78As/GaAs quantum wells where the top barrier thickness is varied from 0 to 50 nm. At the thicknesses of ≤5 nm, the intensity from passivated samples is more than four orders of magnitude larger than that obtained from unpassivated structures. For a passivated surface quantum well where InP is deposited directly onto the GaAs quantum well, we observe a blueshift of 15 meV and an intensity reduction of only a factor of 10 as compared to the luminescence from a quantum well placed at a depth of 50 nm from the surface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115863
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  • 8
    Electronic Resource
    Electronic Resource
    Strain-induced quantum dots by self-organized stressors (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2364-2366 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Novel in situ method to produce quantum dots is reported. Three-dimensional confinement of carriers to a GaInAs/GaAs quantum well dots is observed by photoluminescence. The confinement potential is induced by stressors, formed by self-organizing growth of InP nanoscale islands on top barrier GaAs surface. Two transitions arising from the strain-induced quantum dots produced by two types of InP islands are identified. The luminescence from higher electronic states of the quantum dots having a level splitting of 8 meV is also observed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113984
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  • 9
    Electronic Resource
    Electronic Resource
    Fabrication of GaInAs quantum disks using self-organized InP islands as a mask in wet chemical etching (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4029-4031 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaInAs quantum disks are fabricated by wet chemical etching from a GaInAs/GaAs near-surface quantum well using self-organized InP islands as an etch mask. InP islands are formed in coherent Stranski–Krastanow growth mode by metalorganic vapor phase epitaxy. The free-standing GaInAs/GaAs columns, produced by a three-step etching process, are overgrown at 550 °C. The luminescence efficiency per emitting area from the regrown quantum disks is one order of magnitude larger than that from a regrown reference quantum well. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117860
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  • 10
    Electronic Resource
    Electronic Resource
    Atomic layer epitaxy of III-V compounds in a hydride vapor phase system
    Amsterdam : Elsevier
    Journal of Crystal Growth 99 (1990), S. 550-555 
    Details
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(90)90581-5
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