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  • American Institute of Physics (AIP)  (3)
  • 1995-1999  (3)
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2362-2364 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mid-IR (3.8–3.9 μm) interband cascade lasers based on InAs/GaInSb type-II heterostructures have been demonstrated at temperatures up to 210 K. From several lasers at temperatures above 100 K, we observed a slope greater than 750 mW/A per facet corresponding to a differential external quantum efficiency exceeding 460%. Also, a peak optical output power exceeding 4 W/facet and peak power efficiency of 7% were observed from one laser at 80 K. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1803-1805 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured room-temperature photocurrent spectra of p-i-n diode structures containing multiple superlattice-equivalent quantum wells wherein each quantum well consists of a few periods of a fine-period (In,Ga)As/(In,Al)As superlattice. Both the absolute exciton absorption energies and the Stark shifts are in excellent agreement with calculations, which predict a larger Stark shift for this structure than for a quaternary quantum well with the same width and absorption edge. Calculated electric-field-induced changes in the real and imaginary parts of the refractive index show that these structures are promising candidates for semiconductor intensity and phase modulators for wavelengths around 1.3 μm.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2580-2583 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) spectra of Er3+ in an Er-doped silicon film were recorded at 2 and 77 K over the wavelength range from 1.52 to 1.68 μm, which includes optical transitions between the Er3+ 4I13/2 and 4I15/2 manifolds. These spectra were then analyzed to determine the nature of the electrostatic field at the site of the Er ion that governs the ion's optical behavior. The PL spectra were analyzed three different ways: by considering the Er3+ ions to be occupying sites of Td, C3, or D2d point group symmetry. Transition energies and magnetic dipole transition probabilities were calculated for each case by diagonalizing a Hamiltonian representing the free-ion and crystal-field interactions in a Russell–Saunders basis of states spanning the lowest 15 J multiplets of the 4f11 electronic configuration of Er3+. Crystal-field parameters were varied in each case to find the best agreement with the experiment. Our results showed that the site symmetry of the Er3+ ions most consistent with the data is D2d. For this case, the rms deviation between the experimental and calculated energy levels is 3.3 cm−1 with the calculated magnetic dipole transition probabilities in qualitative agreement with the experiment. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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