Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 2362-2364
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Mid-IR (3.8–3.9 μm) interband cascade lasers based on InAs/GaInSb type-II heterostructures have been demonstrated at temperatures up to 210 K. From several lasers at temperatures above 100 K, we observed a slope greater than 750 mW/A per facet corresponding to a differential external quantum efficiency exceeding 460%. Also, a peak optical output power exceeding 4 W/facet and peak power efficiency of 7% were observed from one laser at 80 K. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125015
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