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Superlattice-equivalent (In,Ga)As/(In,Al)As quantum wells with large Stark shifts in the 1.3-μm spectral region (1995)

Leavitt, R. P. ; Bradshaw, J. L. ; Pham, J. T.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 66 (1995), S. 1803-1805

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We have measured room-temperature photocurrent spectra of p-i-n diode structures containing multiple superlattice-equivalent quantum wells wherein each quantum well consists of a few periods of a fine-period (In,Ga)As/(In,Al)As superlattice. Both the absolute exciton absorption energies and the Stark shifts are in excellent agreement with calculations, which predict a larger Stark shift for this structure than for a quaternary quantum well with the same width and absorption edge. Calculated electric-field-induced changes in the real and imaginary parts of the refractive index show that these structures are promising candidates for semiconductor intensity and phase modulators for wavelengths around 1.3 μm.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.113327

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