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  • American Institute of Physics (AIP)  (12)
  • 2000-2004  (4)
  • 1990-1994  (8)
  • 1965-1969
  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 7951-7961 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present a study of deep-ultraviolet-light-enhanced (4.1〈hν〈5.1 eV) oxygen reactions on GaAs from submonolayer to several monolayers coverage. The reaction is nonthermal and does not involve gas-phase excitation or dissociation of O2. Our experiments show a distinct wavelength and coverage dependence for the photoenhancement. X-ray photoelectron spectroscopy has been used to examine the chemical nature of the oxygen adsorbate and the GaAs oxides in order to find intermediate reaction species and evidence of the reaction pathways. The roles of photons and photogenerated carriers in the reaction enhancement mechanism are discussed. The results indicate that a mechanism based on photoemission of electrons into the growing oxide film is most in accord with the experimental observations. Such electron emission would increase the field-driven transport of oxygen to the GaAs interface.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 34 (1993), S. 3327-3342 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: A discrete version of the quaternionic Cauchy–Riemann equation ∂A=F, where F is Gauss–Poisson white noise, is discussed. On the lattice δZ4 random variables Fδ(δn) and Aδ(δn) are constructed which approximate the corresponding random fields F and A, respectively, in the limit δ→0. In the Gaussian case the random variables Aδ(δn) can be interpreted as the lattice approximation of the free electromagnetic Euclidean potential field whereas in the non-Gaussian case one obtains an approximation of nonlinear interacting electromagnetic quantum fields. Convergence to the continuum limit is proven.
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 114 (2001), S. 1170-1177 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We measured absolute partial cross sections for the formation of various singly charged and doubly charged positive ions produced by electron impact on SiF4 from threshold to 900 eV using a time-of-flight mass spectrometer. Dissociative ionization was found to be the dominant process, although we found evidence of the presence of the SiF4+ parent ion in our experiment. The SiF3+ fragment ion has the largest partial ionization cross section with a maximum value of 4.3×10−16 cm2 at 90 eV. All other singly charged fragment ion cross sections are about one order of magnitude smaller at this impact energy. The cross-section values of the doubly charged ions with the exception of SiF2++ are about two orders of magnitude smaller. A comparison is made with available previously measured data. Additional measurements using a sector-field mass spectrometer revealed that all fragment ions are formed with excess kinetic energy. The experimentally determined total single ionization cross section of SiF4 is compared with results of semiempirical and semiclassical calculations and reasonable agreement is found. © 2001 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 1020-1028 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have made a series of isotropic pressure-densified atactic poly(methyl methacrylate) (PMMA) glasses with densities ranging from 1.1823 g/cm3 to 1.1963 g/cm3, in order to investigate how the glassy dynamics, measured by Raman scattering in the frequency range of 0.1–10 THz, depends on the thermomechanical history of the glasses. In particular, we investigate whether there is a correlation between the strength of the fast relaxation dynamics and the free-volume characteristics, such as the average free-volume size and the free-volume fraction. The fast relaxation strength is deduced from the quasielastic light scattering (QES) intensity; the free-volume size is measured with positron annihilation lifetime spectroscopy (PALS); and the free-volume fraction is determined from pressure–volume–temperature (PVT) data and the Simha–Somcynsky equation-of-state (EOS) theory. Our temperature-dependent Raman and PALS measurements show that both the QES intensity and the ortho-positronium (o-Ps) lifetime increase smoothly with the temperature. On the other hand, the relaxation strength of the densified glasses at room temperature is, within experimental error, independent of the density, whereas both the o-Ps lifetime from PALS and the free volume fraction from the PVT data decrease significantly with pressure densification. We therefore conclude that the fast relaxation intensity cannot be explained on the basis of free-volume quantities, contrary to a recently suggested correlation between the QES intensity and the free volume [V. N. Novikov et al., J. Chem. Phys. 107, 1057 (1997)]. On the other hand, the observed behavior is consistent with another recently suggested model [V. N. Novikov, Phys. Rev. B 58, 8367 (1998)] which attributes the fast relaxations to vibration anharmonicity. Moreover, we show that the measured increase in the refractive index of the pressure-densified glasses fits the Lorentz–Lorenz equation and compares well to predictions of the relative change in refractive index with formation pressure from our own as well as published PVT data. © 2000 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4082-4084 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical contact resistivities of both Al and Cu single layer contacts as well as Cu/Au and Al/Au bilayer metal contacts to YBa2Cu3O7−x (YBCO) thin film have been studied. It was found that aluminum and copper make poor electrical contacts to YBCO due to interface reactions. These contacts have large contact resistivity (10−1–1 Ω cm2), orders of magnitude higher than that of a gold/YBCO contact (10−6 Ω cm2). When an ultrathin Au interlayer (10–30 A(ring)) was inserted between an Al or Cu overlayer and a YBCO film, interface reaction was greatly reduced. The contact resistivities of Al/Au and Cu/Au bilayer-metal contacts dropped by five orders of magnitude when Au interlayer thickness was increased from 0 to 10 A(ring). With the gold interlayer thickness of 15 A(ring), the Al/Au and Cu/Au bilayer-metal contacts reached a minimum contact resistivity, approaching that of a thick single-layer Au metal contact.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4211-4216 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Analytical and numerical calculations of threshold behavior and electro-optical characteristics in twisted chiral nematic layers are presented, when weak anchoring in the tilt and twist angle of the director is assumed. An analytical expression for the effective twist angle and the Fréedericksz threshold voltage is derived. In cells with bistabilities, we investigate the influence of the anchoring parameters and device parameters on the width of the hysteresis. Using the 4×4-matrix formalism of Berreman [J. Opt. Soc. Am. 62, 502 (1972)], we demonstrate the influence of the weak anchoring on the transmission-versus-voltage characteristic.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8417-8419 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The alloy system Six(SnyC1−y)1−x was investigated. The purpose is to form material with reduced strain at silicon heterojunctions. In this work, samples were prepared by coimplantation of tin and carbon ions into silicon wafers within the dosage range 1015–1016 cm−2, followed by rapid thermal annealing. Rutherford backscattering and channeling, Auger sputter profiling, and secondary-ion-mass spectrometry were employed to study the crystallinity, chemical composition, and depth profiles. A near-perfect crystallinity for 0.5 at. % of tin and carbon was achieved. For high-dose implanted samples, tin segregation was observed. This work demonstrates promising features of group-IV semiconductor synthesis by ion implantation.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 85-87 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence from type II CdS/ZnSe quantum-well structures is found to be polarized with respect to the 〈110〉 directions with polarization degrees up to 20%. The absolute polarization direction is related to the interface bond directions in samples with differently prepared interfaces. The observations are explained by the detailed analysis of the epitaxial growth process and polarization sensitive luminescence experiments. © 2000 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1118-1120 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a reduction of inhomogeneous broadening in CdSe-related quantum wells in ZnSe by employing a growth technique that uses a CdS-compound source instead of the standard Cd elemental source for molecular-beam epitaxy. Assisted by the low sticking coefficient of sulfur and possibly an exchange reaction between S and Se, only a small S contamination is observed. A comparison with standard layers reveals an increase in quality and homogeneity by a strong reduction of the photoluminescence (PL) linewidth. Samples obtained by our method show extremely little lateral confinement as indicated by a lack of sharp single dot emission lines in micro PL and the absence of the extensive redshift observed in temperature dependent PL of fluctuating well potentials. © 2001 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 616-616 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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