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  • American Institute of Physics (AIP)  (3)
  • 2010-2014
  • 2000-2004  (3)
  • 2002  (3)
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Publisher
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  • 2010-2014
  • 2000-2004  (3)
Year
  • 1
    Electronic Resource
    Electronic Resource
    Influence of the growth procedure on the Cd distribution in CdSe/ZnSe heterostructures: Stranski–Krastanov versus two-dimensional islands (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 640-642 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular beam epitaxy is used to grow different types of ZnSe/CdSe/ZnSe heterostructures. The topography of the bare CdSe surface studied with in situ atomic force microscopy is compared with high-resolution transmission electron microscopy data on overgrown structures. The growth procedure critically influences morphology and Cd distribution. Only use of thermal activation after low-temperature CdSe deposition enables the accomplishment of a distinct Stranski–Krastanov (SK) morphology with three-dimensional islands with a core of pure CdSe. Interdiffusion effects during activation of the SK transition as well as overgrowth are of minor importance. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1496133
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2099-2101 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of different growth conditions on the In distribution in ultrathin InGaN insertions in a GaN matrix is investigated by high-resolution transmission electron microscopy and an appropriate image evaluation technique. It is demonstrated that the indium distribution represents dense arrays of In-rich nanodomains inserted in a layer with a lower indium concentration. The sizes of the In-rich regions are about 4–5 nm at a growth temperature of 720 °C. Increasing the growth temperature leads to a strong decrease in the of nanoisland density and, also, a moderate decrease in their lateral size. Increasing the trimethylindium/trimethylgallium ratio strongly increases the density of the islands, but the lateral size remains weakly effected. The observations are in agreement with a thermodynamic model of island formation including entropy effects. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1462868
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  • 3
    Electronic Resource
    Electronic Resource
    Ordered arrays of vertically correlated GaAs and AlAs quantum wires grown on a GaAs(311)A surface (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 1080-1082 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study GaAs–AlAs short-period superlattices (SPSLs) grown on a GaAs(311)A surface using plan-view transmission electron microscopy (TEM). A strong in-plane compositional modulation with a period of 3.2 nm along the [01¯1] direction is revealed by TEM under chemically sensitive imaging conditions and in high-resolution TEM. Our results confirm the formation of highly ordered vertically aligned arrays of GaAs and AlAs quantum wires formed via self-organized growth. Bright photoluminescence (PL) at room temperature in the green and yellow spectral range is observed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1497994
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