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Influence of the growth procedure on the Cd distribution in CdSe/ZnSe heterostructures: Stranski–Krastanov versus two-dimensional islands (2002)

Litvinov, D. ; Rosenauer, A. ; Gerthsen, D.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 81 (2002), S. 640-642

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Molecular beam epitaxy is used to grow different types of ZnSe/CdSe/ZnSe heterostructures. The topography of the bare CdSe surface studied with in situ atomic force microscopy is compared with high-resolution transmission electron microscopy data on overgrown structures. The growth procedure critically influences morphology and Cd distribution. Only use of thermal activation after low-temperature CdSe deposition enables the accomplishment of a distinct Stranski–Krastanov (SK) morphology with three-dimensional islands with a core of pure CdSe. Interdiffusion effects during activation of the SK transition as well as overgrowth are of minor importance. © 2002 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1496133

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