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    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2099-2101 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of different growth conditions on the In distribution in ultrathin InGaN insertions in a GaN matrix is investigated by high-resolution transmission electron microscopy and an appropriate image evaluation technique. It is demonstrated that the indium distribution represents dense arrays of In-rich nanodomains inserted in a layer with a lower indium concentration. The sizes of the In-rich regions are about 4–5 nm at a growth temperature of 720 °C. Increasing the growth temperature leads to a strong decrease in the of nanoisland density and, also, a moderate decrease in their lateral size. Increasing the trimethylindium/trimethylgallium ratio strongly increases the density of the islands, but the lateral size remains weakly effected. The observations are in agreement with a thermodynamic model of island formation including entropy effects. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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