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  • 1995-1999  (421)
  • 1970-1974  (13)
  • 1965-1969  (4)
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  • 1
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    Dynamics of planar relativistic domain walls (1997)
    Institute of Physics
    Details
    Publication Date: 1997-05-01
    Print ISSN: 1004-423X
    Topics: Physics
    Published by Institute of Physics
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    PAPER CURRENT
  • 2
    Electronic Resource
    Electronic Resource
    Quantum computing using entanglement states in a photonic band gap (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5237-5244 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we consider a quantum model constructed using N two-level atoms within a photonic band-gap material, and interacting with a single photon mode under suitable nonequilibrium boundary conditions. We solved the eigenvalue problem of the Hamiltonian by using a projection approach, and found that the behavior of the total system is like that of a two-level system with the eigenvectors existing in a dual pair of spaces. Furthermore, we constructed the operators for a quantum logic gate using the entangled states, the eigenvectors of the system. Therefore the interaction between the atoms and the single photon mode cannot introduce any decoherence over the constructed quantum logic gates. Since this approach necessitates solving the eigenvalue problem of the Hamiltonian from first principles, it represents a general formulation for obtaining the spectral decomposition of the Hamiltonian as well as the evolution of the density operator for N two-level atoms interacting with multimode photonic fields; this will be the case independent of whether the system is under equilibrium or not. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371505
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  • 3
    Electronic Resource
    Electronic Resource
    Jordan block structure of two-dimensional quantum neural cellular network (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 634-639 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a Jordan type spectral decomposition for the Hamiltonian operator of a two-dimensional (2D) Ising model driven by a local external field. The results reveal that the external field induces a dynamic contribution to the Jordan block structure, while the interaction between lattice spins contributes to the energy spectrum, tending to attract the system to a minimum energy state. Both interactions contributing to the principle vectors of the Hamiltonian operator reflect their correlation. Since we adopt a first-principle approach the results are useful to general 2D Ising spin systems subject to time-independent external fields irrespective of whether the system is in equilibrium. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370777
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  • 4
    Electronic Resource
    Electronic Resource
    Optimization and characterization of interfaces of InGaAs/InGaAsP quantum well structures grown by gas-source molecular beam epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2889-2891 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a study of the interfaces of InGaAs/InGaAsP quantum wells (QWs) grown by gas-source molecular beam epitaxy. By optimizing the group-V source supply sequence, a photoluminescence (PL) linewidth as narrow as 6.6 meV has been observed from a 2 nm wide single QW. The PL linewidths have been analyzed to evaluate the contributions of alloy compositional scattering and interface roughness. The analysis shows that for QW structures grown with the optimized growth sequence, the PL linewidth is mainly due to alloy compositional variations, whereas the contribution from interface roughness is small, indicating a good interface control. By considering the strain effect on the band alignment of the InGaAs/InGaAsP heterojunction, theoretical transition energies of QWs have been calculated using the envelope-function approximation, and the results agree well with the experimental data. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360032
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  • 5
    Electronic Resource
    Electronic Resource
    Hysteretic behavior of the transport critical current density in a bent Bi-Pb-Sr-Ca-Cu-O silver sheathed tape (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3942-3944 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The hysteretic behavior of transport critical current density of a flexible Bi-based tape with bending strain has been investigated. After zero field cooling (ZFC), the experimental data obtained at 77 K under field cycling in the range of applied field from 0 to 1000 G to 0, indicate that the hysteretic ΔJc(H,ε), which is defined as the difference between the transport critical current Jc(H,ε) in an increasing field and decreasing field H, do not vary when bending strain ε is smaller than a critical bending strain εb, and then decreased gradually with increasing bending strain, but the normalized ΔJc(H,ε)/Jc(H,ε) values are unaffected by the bending strain up to 0.8%. Furthermore, the family of curves of Jc(H,ε)/Jc(0,ε) are independent of bending strain and can be described by an empirical expression, which is analogous to formulae exploited in the generalized critical state model. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358575
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  • 6
    Electronic Resource
    Electronic Resource
    N incorporation in InP and band gap bowing of InNxP1−x (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1934-1936 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The N incorporation behavior in InP grown by gas-source molecular beam epitaxy using a N radical beam source has been investigated. At a given growth temperature, the N composition in InNxP1−x is generally different from the N2 flow-rate fraction in the vapor phase, and as the N2 flow-rate fraction increases, it saturates after increasing to a certain point. This may be due to the small solubility of N in InP. Increasing the growth temperature will result in a loss of N incorporation into the InP as a result of the faster desorption of the N at high temperatures. Optical absorption measurements reveal that the band-gap energy of InNxP1−x decreases drastically, resulting in band-gap bowing. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362945
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  • 7
    Electronic Resource
    Electronic Resource
    A high-temperature x-ray-diffraction study of epitaxial PbTiO3 thin films on MgO(100) grown by metal-organic chemical-vapor deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6235-6242 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial lead titanate (PbTiO3) thin films were grown on MgO(100) single-crystal substrate by metal-organic chemical-vapor deposition at a growth temperature of 650 °C. The films were dense, stoichiometric, and epitaxial. The domain structure was studied via x-ray-diffraction ω scans and in-plane Φ scans. Existence of c and a domains in the PbTiO3 films was evident. Consistent with literature reports, the a domains were found to have four variants 90° apart from each other, tilting about 2.2° away from the surface normal. The population ratio between c and a domain of the PbTiO3 films was determined to be approximately 2.3 to 1. The domain structure was found to be stable and reproducible during repeated thermal cycling above and below Tc. Furthermore, lattice parameters and Curie temperatures of PbTiO3 thin films were measured during the thermal cycles. The lattice parameters were found to be smaller and the Curie temperatures were shifted lower than the corresponding bulk values. This is attributed to the film stress effect. A theory based on the Landau–Ginzburg–Devonshire function has been developed to explain the shift of the Curie temperatures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363700
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  • 8
    Electronic Resource
    Electronic Resource
    Morphological evolution of diamonds in combustion synthesis (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7241-7247 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This research investigates the morphological evolution of diamond films in combustion synthesis as a basis for understanding the nucleation and growth mechanisms of the diamond phase. Various diamond films were synthesized from an oxyacetylene flame on a molybdenum substrate under atmospheric conditions. To identify their morphological characteristics, the films were studied by scanning electron microscopy and were characterized by μ-Raman spectroscopy. These investigations suggest that initial diamond growth resembles a ball-like structure consisting of a mixture of graphite and diamond crystallites. As growth progresses, varying the gas ratio and substrate temperature conditions can cause the diamond crystallites to evolve from the cauliflower-like, to octahedral, and cubic structures. The nucleation and growth mechanisms of the diamond phase are discussed at the atomic, lattice, and macroscopic levels. The research concludes that morphological evolution varies with the rate of deposition and etching on both sp3 and non-sp3 bonded carbons. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361441
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  • 9
    Electronic Resource
    Electronic Resource
    Generalization of hysteresis modeling to anisotropic materials : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5585-5587 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An extension to the model of hysteresis has been presented earlier which included the effect of anisotropy in the modeling of the anhysteretic magnetization curves of uniaxially anisotropic single crystalline materials. Further exploration of this extension shown here considers different kinds of crystal anisotropy in materials. Theory considers that the differential susceptibility at any given field is determined by the displacement of the prevailing magnetization from the anhysteretic magnetization. Thus, it has been shown that the effect of anisotropy on magnetic hysteresis in materials can be incorporated into the model of hysteresis through the anisotropic anhysteretic. This extension is likely to be particularly useful in the case of hard magnetic materials which exhibit high anisotropy. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364843
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  • 10
    Electronic Resource
    Electronic Resource
    Growth and characterization of InNxAsyP1−x−y/InP strained quantum well structures (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1161-1163 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, we propose the material InNxAsyP1−x−y (InNAsP) on InP for long-wavelength laser applications, where the unique feature of the smaller lattice constant of nitrides together with the large electronegativity of nitrogen atoms has been utilized in reducing the system strain while increasing the conduction-band offset by putting N into a compressively strained material system. InNAsP/In(Ga)(As)P strained quantum well (QW) samples were grown by gas-source molecular beam epitaxy with a rf nitrogen plasma source. Very sharp and distinct satellite peaks as well as Pendellosung fringes are observed in high-resolution x-ray rocking curves for these QWs, indicating good crystalline quality, lateral uniformity, and vertical periodicity. Photoluminescence (PL) measurements on InNAsP/InP single QWs with different well widths as well as on InNAsP/InGaAsP multiple QWs reveal strong PL emissions in the range of from 1.1 to 1.5 μm, demonstrating their suitability for long-wavelength applications. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121000
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