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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    The journal of membrane biology 141 (1994), S. 21-28 
    ISSN: 1432-1424
    Keywords: Fatty acids ; Liposomes ; Cation transport ; Membrane transport
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology
    Notes: Abstract The rate of change of internal pH and transmembrane potential has been monitored in liposomes following the external addition of various cation salts. Oleic acid increases the transmembrane movement of H+ following the imposition of a K+ gradient. An initial fast change in internal pH is seen followed by a slower rate of alkalinization. High concentrations of the fatty acid enhance the rate comparable to that seen in the presence of nigericin in contrast to the effect of FCCP (carbonyl cyanide p-(tri-fluoromethoxy)phenyl hydrazone) which saturates at an intermediate value. The ability of nonesterified fatty acids to catalyze the movement of cations across the liposome membrane increases with the degree of unsaturation and decreases with increasing chain length. Li and Na salts cause a similar initial fast pH change but have less effect on the subsequent slower rate. Similarly, the main effect of divalent cation salts is on the initial fast change. The membrane potential can enhance or inhibit cation transport depending on its polarity with respect to the cation gradient. It is concluded that nonesterified fatty acids have the capability to complex with, and transport, a variety of cations across phospholipid bilayers. However, they do not act simply as proton/cation exchangers analogous to nigericin nor as protonophores analogous to FCCP. The full cycle of ionophoric action involves a combination of both functions.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    European journal of clinical pharmacology 28 (1985), S. 429-431 
    ISSN: 1432-1041
    Keywords: theophylline ; asthma ; personality measures ; pharmacokinetics ; volunteers ; patients
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Medicine
    Notes: Summary Thirteen volunteers received an iv dose of theophylline followed by blood sampling for 8 h to calculate pharmacokinetic parameters. Ten patients with asthma undergoing chronic dosing with slow release aminophylline underwent 12 h of blood sampling to calculate theophylline clearance. Both groups completed an Eysenck Personality Inventory (EPI) from which was derived scores for neuroticism (N) and extroversion (E). Using multiple regression analysis no independent effect of either N or E score on theophylline clearance or half-life could be demonstrated.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    European journal of clinical pharmacology 29 (1985), S. 177-179 
    ISSN: 1432-1041
    Keywords: theophylline clearance ; age ; adult age range ; normal subjects
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Medicine
    Notes: Summary Twenty volunteers aged between 20 and 57 years were given 197 mg of theophylline (as lysine theophylline) by iv infusion over 5 minutes to test the hypothesis that within the adult age range theophylline clearance declines with age. Samples were assayed for theophylline using the EMIT assay and clearance was determined by standard methods. Clearance values were 0.73 ml/min/kg below age 38 years and 0.75 ml/min/kg at and above age 38 years. Multiple regression analysis using age as a continuous variable showed no relationship between age and clearance.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 603 (1990), S. 0 
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 94 (1990), S. 1830-1836 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 800-802 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The generation of slip dislocations in BF2 ion-implanted, 100-mm-diam silicon wafers during rapid thermal annealing is investigated. Whole wafer x-ray topography shows that annealing at 1150 °C causes slip to initiate randomly at positions of maximum resolved stress at the wafer edges and over scribe marks made on the back surface prior to annealing. Lowering the annealing temperature by 20 °C, which corresponds to decreasing the silicon yield stress by less than 106 dyn cm−2, prevents slip from occurring and allows sufficient removal of implantation-induced defects from which junction diodes with good current-voltage characteristics are fabricated.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2225-2226 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactive ion etching is important for III-V device fabrication. Commonly encountered applications include the need to remove an epitaxial layer selectively from underlying layers and the need for definition of mesas and other structures with carefully controlled dimensions. We present results showing the use of very thin Al0.9Ga0.1As and In0.2Ga0.8As stop-etch layers, which when used in conjunction with a particular etch chemistry can provide highly selective removal of epitaxial layers in GaAs-based III-V compound semiconductors. In addition, we report the selective removal of an Al0.3Ga0.7As layer from underlying GaAs by the use of a thin In0.2Ga0.8As interlayer.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1083-1085 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of a reactive ion etch process with high selectivity for etching GaAs layers and stopping on underlying AlGaAs layers is reported. A key feature is the high degree of control that can be maintained over the GaAs-to-AlGaAs selectivity by changing the SF6/SiCl4 ratio while keeping other etch parameters such as pressure, dc bias, or power constant. Values of the GaAs-to-AlGaAs selectivity can be varied from 1 to 500. Diluent gases such as helium can be added to reduce the etch rate, which is important to avoid damage to sensitive device structures and to the overhang profile of resist materials used for liftoff metallization. The application of this etch process for high electron mobility transistor fabrication is discussed.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1444-1446 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel technique was developed to grow high-purity polycrystalline diamond films at 850 °C and 50 mTorr with 10% CH4, 2% O2, and balance H2 using a filament-assisted chemical vapor deposition technique in combination with an electron cyclotron resonance (ECR) plasma. Using Raman spectroscopy and in situ plasma diagnostics, we have shown that the hydrogen plasma selectively etched nondiamond components during deposition. Experiments with ECR plasma and the filament-assisted technique from 10−6 Torr to 50 mTorr and 500–1000 °C indicated that low-energy electrons are a key factor in growth of diamond thin films.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1311-1313 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Etching of SiO2 with low-energy Ar ions has been studied in an electron cyclotron resonance (ECR) based etching system. Ion energies were controlled by a capacitively coupled 13.56 MHz bias of the substrate. Etch rates of over 100 A(ring)/min have been achieved at ion energies below 100 V. The variation in etch rate has been studied as a function of ECR power, self-induced bias, and position of the wafer relative to the ECR source. This low-energy process can be utilized for cleaning of semiconductor surfaces prior to chemical vapor deposition or metallization processes.
    Type of Medium: Electronic Resource
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