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  • 1985-1989  (69)
  • 1960-1964  (29)
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  • 1
    Digitale Medien
    Digitale Medien
    Assignment of proton NMR spectra of polycyclic aromatic hydrocarbons by multiple quantum filtration (1986)
    s.l. : American Chemical Society
    The @journal of organic chemistry 51 (1986), S. 5210-5213 
    Details
    ISSN: 1520-6904
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/jo00376a029
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  • 2
    Digitale Medien
    Digitale Medien
    Hydrolysis Reactions of Halogenated Cyclobutene Ethers: Synthesis of Diketocyclobutenediol1a (1962)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 84 (1962), S. 2919-2922 
    Details
    ISSN: 1520-5126
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/ja00874a015
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  • 3
    Digitale Medien
    Digitale Medien
    Highly activated shallow Ga profiles in silicon obtained by implantation and rapid thermal annealing (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 992-994 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The physical and electrical characteristics of gallium (Ga) ion implanted 〈100〉 silicon, annealed for times of the order of seconds to several tens of seconds for temperatures in the range of 550–900 °C, are presented. It is shown that for the chosen doses of 1–6×1015/cm2 and energy of 100 keV highly electrically active p-type layers (approaching 100%) can be achieved. The highest activation being reached at temperatures below ∼650 °C with no profile distortion. For temperatures in excess of 800 °C this electrical activation decreases and significant profile movement occurs even for times as short as 2 s.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.98786
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  • 4
    Digitale Medien
    Digitale Medien
    Boron deactivation and the contact resistance problem (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2072-2075 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Recent investigations of ohmic contacts to silicon indicate that for many metallization candidates, contacts made to p+Si are of considerably higher resistance than similar contacts to n+Si. Recent studies have also shown that active boron acceptors in silicon may be deactivated by hydrogen. We discuss the effect that this hydrogen deactivation may have on the specific contact resistance, in view of the results of recent studies that involved several different metallizations. We propose means to deal with the problem in order to secure good ohmic contact characteristics to both polarities of active regions in silicon.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.336393
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  • 5
    Digitale Medien
    Digitale Medien
    A model for the reflectivity in laser-substrate interactions (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5102-5105 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We study the issue of reflectivity in interactions of laser beams with condensed matter substrates. In particular, we discuss the effect that the reflectivity has on the melting of silicon. The theory of the laser-solid interaction expresses the properties of the hot zone that forms in the solid in terms of the beam parameters, such as the power and the spatial profile. The value of the reflectivity determines the actual value of the deposited power, and hence greatly influences the properties of the hot zone. The reflectivity is temperature dependent, and hence it constantly varies during the period in which the laser power rises to its maximum value. Therefore, a meaningful model is required in order to properly account for its effects. We have developed such a dynamical model for the reflectivity. The results of this model compare well with relevant experimental measurements.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.342416
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  • 6
    Digitale Medien
    Digitale Medien
    Transient boron diffusion in ion-implanted crystalline and amorphous silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1452-1463 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Boron diffusion in ion-implanted and annealed single-crystal and amorphized Si is compared to determine the effect of amorphization on the initial transient boron motion reported for single crystal. The boron was implanted at 20 keV and at doses of 1×1015 and 3×1015cm−2. The Si was either preamorphized or postamorphized to a depth of 320 nm by implantation of Si ions at three different energies. In the amorphized samples the entire boron profile was always contained within this distance. The samples were annealed by furnace or rapid thermal annealing to 900–1100 °C with or without a preanneal at 600 °C. The initial rapid diffusion transient in the tail region of the boron profile was observed in all the crystal samples. This transient was totally absent in the amorphized samples. This is manifest by careful comparison of boron concentration profiles determined by secondary ion mass spectrometry of single-crystal and amorphized samples after annealing. For anneals where significant motion occurs, the profiles of the amorphized samples could be fit with a computational model that did not include anomalous transient effects. It is proposed that excess interstitials cause the transient diffusion in the case of the crystalline samples. The source of interstitials is believed to be provided by the thermal dissolution of small clusters that are formed by the implantation process. They exist for only a short time, during which they enhance the boron diffusion. Since there is no enhanced diffusion in the amorphous region that regrows to single crystal, apparently interstitial clusters are neither produced by nor do they survive the regrowth process in that region. In addition, the interstitials generated by the damage beyond the amorphous-crystalline boundary are prevented from entering the regrown region by the dislocation loops formed at that boundary which act as a sink consuming the interstitials diffusing toward the surface.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.339926
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  • 7
    Digitale Medien
    Digitale Medien
    Rapid thermal annealing of hydrogenated amorphous silicon grown at low temperature (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1425-1428 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Hydrogenated amorphous silicon with different levels of phosphorous doping has been deposited by plasma-enhanced chemical vapor deposition at a temperature of 125 °C. Its electrical properties are largely inferior to those of standard material grown at 275 °C, but they can be improved by a rapid thermal annealing process. The change in electrical conductivity depends on the doping level and is better for 0.1% than 1% or undoped samples. In this case the electrical conductivity, after annealing, increases by three orders of magnitude and is only a factor of 10 less than that of the best conducting material produced at 275 °C. The improvement in electrical properties is not causatively related to the loss of hydrogen. This low-temperature material, after annealing, forms relatively low resistance contacts with molybdenum or aluminum and is suitable for application in thin-film transistor technology.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.339647
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  • 8
    Digitale Medien
    Digitale Medien
    Vertical high-resolution Bragg x-ray spectrometer for the tokamak fusion test reactor (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 2145-2147 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A Bragg x-ray spectrometer of high spectral resolution (λ/Δλ=10 000–20 000) which accommodates three crystals and position-sensitive detectors in the Johann configuration has been installed in the diagnostic basement of the tokamak fusion test reactor (TFTR) for the measurement of radial ion temperature profiles. The ion temperature is derived from the Doppler broadening of Kα-resonance lines of metal impurity ions, e.g., Ti, Cr, Fe, and Ni, in the helium-like and hydrogen-like charge states. The x-ray diffraction plane is almost perpendicular to the magnetic axis, but slightly tilted by an angle of 3.8°, which makes it possible to measure poloidal and toroidal plasma rotation velocities of vaitch-theta〉5×103 m/s and vΦ〉1×105 m/s, from the Doppler shift of spectral lines. Results obtained from the observation of TiXXl Kα-line spectra with a 220-silicon crystal of a 2d spacing of 3.8400 A(ring) and a curvature radius of 11.05 m are reported.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1138711
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  • 9
    Digitale Medien
    Digitale Medien
    The Biochemistry of Viruses (1963)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Biochemistry 32 (1963), S. 83-154 
    Details
    ISSN: 0066-4154
    Quelle: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Thema: Chemie und Pharmazie , Biologie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1146/annurev.bi.32.070163.000503
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  • 10
    Digitale Medien
    Digitale Medien
    Shallow boron-doped junctions in silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1200-1213 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Shallow boron-doped junctions in silicon have been investigated by means of secondary ion mass spectrometry, scanning electron microscopy, transmission electron microscopy, spreading resistance profiling, and four-point probe techniques. The junctions were formed by implanting BF+2 ions into n-type Si at the dose range of 1–5×1015 ions/cm2, through a thin (25-nm) screen layer of silicon dioxide. We have emphasized the higher dose range (3–5×1015 ions/cm2) as it is more relevant to processes in the current level of device integration. The use of BF+2 species and the screen oxide layer is necessary in order to form junctions whose depths xj≤0.4 μm, when conventional annealing techniques are employed. We have also examined junctions that were activated in a rapid thermal annealing system that utilizes an incoherent light source. One of the main objectives of this study is to compare conventional and rapid thermal annealing techniques. We thus evaluate the results obtained by these two methods of annealing for both the junction depth xj and the sheet resistivity Rs. Other relevant variables such as a low-temperature (77-K) implantation, surface amorphization by Si implantation, and preactivation annealing have also been examined and their effects are discussed. Based on the results of the present study, a mechanism for boron activation in silicon is discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.334517
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