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  • 1
    Electronic Resource
    Electronic Resource
    Nucleic Acids of Rickettsiæ (1952)
    [s.l.] : Nature Publishing Group
    Nature 170 (1952), S. 846-847 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] We have recently analysed the deoxyribonucleic acid of another rickettsia from the same host. Deoxyribonucleic acid was isolated2 from epidemic typhus rickettsise (R. prowazeki) grown in chick yolk-sac endothelium, and the purine and pyrimidine bases estimated3 after hydrolysis in perchloric acid ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/170846a0
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  • 2
    Electronic Resource
    Electronic Resource
    A model for the reflectivity in laser-substrate interactions (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5102-5105 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the issue of reflectivity in interactions of laser beams with condensed matter substrates. In particular, we discuss the effect that the reflectivity has on the melting of silicon. The theory of the laser-solid interaction expresses the properties of the hot zone that forms in the solid in terms of the beam parameters, such as the power and the spatial profile. The value of the reflectivity determines the actual value of the deposited power, and hence greatly influences the properties of the hot zone. The reflectivity is temperature dependent, and hence it constantly varies during the period in which the laser power rises to its maximum value. Therefore, a meaningful model is required in order to properly account for its effects. We have developed such a dynamical model for the reflectivity. The results of this model compare well with relevant experimental measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342416
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  • 3
    Electronic Resource
    Electronic Resource
    Melt-front velocity in laser-induced melting (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6694-6700 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser melting processes have been studied extensively, particularly for semiconductor substrates. Values for the velocity of the melt front have been determined by several experimental methods, and also calculated in numerical simulations of the melting processes. The velocity of the melt both during melting and recrystallization is of direct consequences for the material properties of the laser treated zone. Hence, a clear understanding of the physical parameters involved is essential. For laser pulses of a Gaussian shape, and whose duration is longer than a few tens of nanoseconds, expressions are derived for the melt-front velocity for the general case and for the limiting case of a point source. In either case the velocity turns out to be nonconstant. Hence, experimentally reported values may only be regarded as indicative of the maximum velocity achievable. The simple closed-form analytical expressions obtained in the present study are amenable for a direct analysis of relevant experimental results. Comparison made with some available data reveals a general agreement between theory and experiment. Ultra high-speed photography is one possible technique that may enable observation of the varying velocity of the lateral melt front.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345106
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  • 4
    Electronic Resource
    Electronic Resource
    The effect of multiple laser pulses on damage to thin metallic films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 630-637 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanical effects due to the application of multiple laser pulses to thin metallic films are studied. Particular attention is paid to systems involving thin aluminum films deposited on an insulating substrate such as silica. This film/substrate combination is widely employed in silicon semiconductor technology. In building such devices laser energy is sometimes used for the purpose of cutting conducting lines, while in other applications it is used to effect linking between two levels of metallization. Both processes have been greatly facilitated by employing a multiple-pulse scheme. The mechanism responsible for this effect is discussed and it is shown how the present model leads to a good agreement between the measured and calculated quantities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351347
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  • 5
    Electronic Resource
    Electronic Resource
    Shallow boron-doped junctions in silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1200-1213 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shallow boron-doped junctions in silicon have been investigated by means of secondary ion mass spectrometry, scanning electron microscopy, transmission electron microscopy, spreading resistance profiling, and four-point probe techniques. The junctions were formed by implanting BF+2 ions into n-type Si at the dose range of 1–5×1015 ions/cm2, through a thin (25-nm) screen layer of silicon dioxide. We have emphasized the higher dose range (3–5×1015 ions/cm2) as it is more relevant to processes in the current level of device integration. The use of BF+2 species and the screen oxide layer is necessary in order to form junctions whose depths xj≤0.4 μm, when conventional annealing techniques are employed. We have also examined junctions that were activated in a rapid thermal annealing system that utilizes an incoherent light source. One of the main objectives of this study is to compare conventional and rapid thermal annealing techniques. We thus evaluate the results obtained by these two methods of annealing for both the junction depth xj and the sheet resistivity Rs. Other relevant variables such as a low-temperature (77-K) implantation, surface amorphization by Si implantation, and preactivation annealing have also been examined and their effects are discussed. Based on the results of the present study, a mechanism for boron activation in silicon is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334517
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  • 6
    Electronic Resource
    Electronic Resource
    Boron deactivation and the contact resistance problem (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2072-2075 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent investigations of ohmic contacts to silicon indicate that for many metallization candidates, contacts made to p+Si are of considerably higher resistance than similar contacts to n+Si. Recent studies have also shown that active boron acceptors in silicon may be deactivated by hydrogen. We discuss the effect that this hydrogen deactivation may have on the specific contact resistance, in view of the results of recent studies that involved several different metallizations. We propose means to deal with the problem in order to secure good ohmic contact characteristics to both polarities of active regions in silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336393
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  • 7
    Electronic Resource
    Electronic Resource
    The Biochemistry of Viruses (1963)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Biochemistry 32 (1963), S. 83-154 
    Details
    ISSN: 0066-4154
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Chemistry and Pharmacology , Biology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.bi.32.070163.000503
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  • 8
    Electronic Resource
    Electronic Resource
    A New Pyrimidine Base from Bacteriophage Nucleic Acids (1952)
    [s.l.] : Nature Publishing Group
    Nature 170 (1952), S. 1072-1073 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The nucleic acid bases liberated by hydrolysis of whole viruses or virus deoxyribonucleic acid were separated on paper chromatograms using isopro-panol - water - hydrochloric acid5 as the solvent. When formic acid (88 per cent at 175 C. for 30 min.) was used for hydrolysis, a substance was ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/1701072a0
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  • 9
    Electronic Resource
    Electronic Resource
    Ueber das 3.4.2′-Trioxyflavonol (1904)
    Weinheim : Wiley-Blackwell
    Berichte der deutschen chemischen Gesellschaft 37 (1904), S. 2627-2631 
    Details
    ISSN: 0365-9496
    Keywords: Chemistry ; Inorganic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/cber.19040370319
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  • 10
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    STUDIES ON UNBALANCED GROWTH IN ESCHERICHIA COLI (1954)
    National Academy of Sciences
    Details
    Publication Date: 1954-10-01
    Print ISSN: 0027-8424
    Electronic ISSN: 1091-6490
    Topics: Biology , Medicine , Natural Sciences in General
    Published by National Academy of Sciences
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