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  • 1985-1989  (187)
  • 1965-1969  (9)
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  • 1
    Publikationsdatum: 1988-12-16
    Beschreibung: Mutational inactivation of the retinoblastoma susceptibility (RB) gene has been proposed as a crucial step in the formation of retinoblastoma and other types of human cancer. This hypothesis was tested by introducing, via retroviral-mediated gene transfer, a cloned RB gene into retinoblastoma or osteosarcoma cells that had inactivated endogenous RB genes. Expression of the exogenous RB gene affected cell morphology, growth rate, soft agar colony formation, and tumorigenicity in nude mice. This demonstration of suppression of the neoplastic phenotype by a single gene provides direct evidence for an essential role of the RB gene in tumorigenesis.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Huang, H J -- Yee, J K -- Shew, J Y -- Chen, P L -- Bookstein, R -- Friedmann, T -- Lee, E Y -- Lee, W H -- EY-05758/EY/NEI NIH HHS/ -- HD-20034/HD/NICHD NIH HHS/ -- New York, N.Y. -- Science. 1988 Dec 16;242(4885):1563-6.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Pathology, School of Medicine, University of California, San Diego, La Jolla 92093.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/3201247" target="_blank"〉PubMed〈/a〉
    Schlagwort(e): Cell Division ; DNA, Neoplasm/genetics ; Disease Susceptibility ; Eye Neoplasms/*genetics/pathology ; Humans ; Osteosarcoma/genetics ; Phenotype ; Phosphoproteins/genetics ; Plasmids ; Retinoblastoma/*genetics/pathology ; *Suppression, Genetic ; Transcription, Genetic ; *Transfection ; Tumor Cells, Cultured/metabolism
    Print ISSN: 0036-8075
    Digitale ISSN: 1095-9203
    Thema: Biologie , Chemie und Pharmazie , Informatik , Medizin , Allgemeine Naturwissenschaft , Physik
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Springer
    Theoretical and applied genetics 78 (1989), S. 788-792 
    ISSN: 1432-2242
    Schlagwort(e): Rice (Oryza sativa L.) ; Seed protein loci ; Codominance ; Inheritance ; SDS-PAGE
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Biologie
    Notizen: Summary Previous studies indicated two types of phenotypic protein markers as two minor bands of SDS-PAGE for rice storage protein. A variant derived from a Pakistani variety, Dular, was found to show a mobility variant with Band 11, a relatively faster-moving band as compared to Band 10, while most of the other cultivated rices exhibited Band 10 at a molecular weight of around 100–110 K. Band 11 was also observed in several wild rice species. How this variant occurred is not known. Another marker is characterized by the presence of either Band 56 (slower-migrating band) or Band 57 (faster-migrating band) in most cultivars at a molecular weight of about 28–27 K. Most indica varieties developed in Taiwan have Band 57 and japonica varieties have Band 56. Genetic analysis of F1, F2 and F3 seeds from interstrain crosses indicated that Band 10 versus Band 11 and Band 56 versus Band 57 are due to codominant alleles at two loci. Tests of independent inheritance between these two loci (Band 10/11 versus Band 56/57) indicated that there is no linkage between them. Both of these two protein loci encode for endosperm proteins and mostly belong to the minor polypeptide subunits of the glutelin fraction of rice seed proteins. Studies on reciprocal crosses indicate dosage effects as exhibited in band patterns. Variations in band intensity were frequently observed when the maternal genotype was different.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 90 (1986), S. 2841-2846 
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie , Physik
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5246-5250 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Interfacial reactions of iron thin films on silicon have been investigated by transmission electron microscopy. FeSi was found to form after 400 °C annealing. Small amount of Fe3Si was detected in samples annealed at 450 to 500 °C. β-FeSi2 grains were predominant with a few FeSi grains remained in samples annealed at 600 °C. β-FeSi2 was found to be the dominant phase, whereas α-FeSi2 was predominant in samples annealed at 900–1100 °C in N2 ambient and in vacuum, respectively. Two-step annealings were effective in promoting the growth and improving the quality of epitaxial FeSi2. More uniform growth of epitaxial FeSi2 was observed for samples annealed in vacuum than those heat treated in N2 ambient. The mechanisms of epitaxial growth and the influence of impurities on the interfacial reactions are discussed.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2304-2306 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The formation of a two-layer structure and the inhibition of the formation of dislocation loops near the projected ion range (Rp ) have been observed by cross-sectional transmission electron microscopy in 80 keV, 1×1016 and 2×1016/cm2 As+-implanted (001) Si, respectively. The correlations among the arsenic concentration, electrical inactivation of impurity, suppression of the formation of interstitial loops near Rp, and retardation of the epitaxial regrowth rate provide significant insight into the point-defect migration and agglomeration during solid phase epitaxial regrowth of implantation amorphous silicon.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 6
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2464-2466 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Bulk superconductivity with Tc (zero) up to 95 K in a Tl0.5Pb0.5Ca0.9Ce0.1Sr2Cu2 oxide with an Y1Ba2Cu3Oy -like structure was observed. Single-phase samples, tetragonal in structure with a=0.380±0.001, c=1.195±0.001 nm, and of P4/mmm space group, were prepared. The results represent the first case where Ce substitution significantly raised the Tc of a known compound. The samples were remarkably homogeneous both in composition and structure. The compounds were highly reproducible and stable. The preparative conditions were found to be much less stringent than those of other copper-based high Tc superconductors.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 7
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 913-915 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The crystal structure and microstructures of a high Tc BiSrCaCuO (BSCCO) compound were characterized by transmission electron microscopy, x-ray diffraction (XRD), and energy dispersive spectrometry (EDS). Convergent beam electron diffraction (CBED) analysis established that the crystal is of mm2 symmetry. Combined with electron diffraction, XRD, and EDS data, the high Tc superconducting BSCCO compound was found to be of the Pnn2 space group, orthorhombic in structure with a=0.540 nm, b=2.689 nm, and c=3.040 nm and with an approximate composition of Bi2Sr2CaCu2Oy. Diffraction contrast analysis indicated that the dislocations are predominantly of screw character with [010] or [001] Burgers vectors. However, edge type dislocations and dislocations with [100] Burgers vector were also observed. The magnitude of the Burgers vector along the [100] direction was determined to be 1/2 [100] by high-resolution lattice imaging. Stacking faults and small-angle grain boundaries were frequently observed. The presence of a high density of defects in the superconducting oxide may facilitate the processing of the material and serve as effective flux line barriers.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 8
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1217-1219 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The growth kinetics of amorphous interlayer (a interlayer) in polycrystalline Ti films on single-crystal-silicon has been studied by cross-sectional transmission electron microscopy. The growth was found to follow a linear growth law initially in samples annealed at 350–425 °C. The activation energy of the linear growth was measured to be 1.6±0.3 eV. Maximum thicknesses of the a interlayers were measured to be of the order of 10 nm. The formation of an a interlayer was observed in samples annealed at a temperature as high as 600 °C. The formation and growth kinetics of a interlayers in Ti/Si and Ni/Zr systems are compared. Essential factors for the formation and growth of an a interlayer are discussed. The results represent the first report on the growth kinetics of an a interlayer in metal thin films on single-crystal silicon.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 9
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1588-1590 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Localized epitaxial Co5Ge7 and CoGe2 have been grown in cobalt thin films on (111)Ge in the solid phase epitaxy regime. The orientation relationships between epitaxial germanides and the substrates as well as the configuration of the interfacial dislocations were analyzed by transmission electron microscopy (TEM) in detail. Surface morphology was examined by scanning electron microscopy. The results obtained from Read camera glancing angle x-ray diffraction and Rutherford backscattering channeling analysis were found to corroborate with those from TEM examinations.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 10
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 565-567 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The formation of discrete layers of dislocation loops near the projected ion ranges (Rp loops) of 65–80 keV, high-dose (5×1015–2×1016/cm2) P+-implanted (001)Si was observed by cross-sectional transmission electron microscopy (XTEM). Both the energy and dose dependence of the annealing behaviors of Rp loops provided strong evidences that they are related to P clustering. The inactivation of dopants due to precipitation, hence the appearance of Rp loops, is correlated to the sheet resistance data. The retardation of the solid phase epitaxial growth was shown to be related to the formation of Rp loops. Using Rp loops as an indicator of changes in point-defect distribution, a combined XTEM and plan-view TEM study was found to be most appropriate for the study of the precipitation process in high-dose P+-implanted silicon.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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