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  • 1
    Electronic Resource
    Electronic Resource
    The interfacial layer formation of the Al2O3/Si structures grown by low-pressure metalorganic chemical vapor deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 760-762 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metalorganic chemical vapor deposition of Al2O3 using Al(O-C3H7)3 and N2O via pyrolysis was investigated with the goal of producing Al2O3 epitaxial films on p-Si (100) substrates. Room-temperature capacitance-voltage measurements clearly showed metal-insulator-semiconductor behaviors for the samples with the Al2O3 insulator gate, and the interface state densities at the Al2O3/p-Si interface were approximately 1011 eV−1 cm−2 at the middle of the Si energy gap. Auger depth profiles demonstrated that the Al2O3/Si interface was not abrupt, and transmission electron microscopy verified the formation of an interfacial layer in the Al2O3/Si interface and the formation of a polycrystalline Al2O3 thin film. These results indicated that the failure to form Al2O3 epitaxial films was due to the formation of an interfacial layer prior to the growth of the Al2O3 layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355224
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical characteristics of barium titanate films prepared by laser ablation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2143-2145 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The BaTiO3 ferroelectric films of quality suitable for applying as dielectrics in 64 and 256 Mb dynamic random access memory have been successfully synthesized using the laser ablation technique. The dielectric constant and dielectric strength of the films are ε=200 and 1 MV/cm, respectively. The switching characteristics are Qc=0.66 μc/cm2, ts=0.1 ps, and J1=1.57 μA/cm2 at 2.5 V, for charge storage density, writing time, and leakage current density, respectively. The quality of the BaTiO3 films is superior to the Ta2O5 dielectric films and is comparable to the lead-zirconate-titanate ferroelectric films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354744
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  • 3
    Electronic Resource
    Electronic Resource
    Defect formation in the solid phase epitaxial growth of GaAs films on Si (001) substrate (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 237-242 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The defect structures of GaAs film on (001) Si substrate tilted ∼3° towards the [110] direction were investigated by the high-resolution transmission electron microscopy. GaAs films were grown by the molecular beam epitaxy (MBE) on the Si (001) substrate by a modified two-step process, in which amorphous GaAs buffer layers were grown first. High-resolution electron micrographs show that stacking faults (and/or microtwins) are preferentially formed on the tilted step-rich surface, whereas misfit dislocations are preferentially formed on the flat surface. However, the difference in the defect density on the two cross sections is small. Between the observed 90° edge and 60° misfit dislocations the density of the latter is higher irrespective of the substrate tilt. This occurrence is explained by the difference in distribution of initial nucleating islands between the present and the conventional two-step MBE techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347756
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  • 4
    Electronic Resource
    Electronic Resource
    Interfacial layer formation of the CdTe/InSb heterointerfaces grown by temperature gradient vapor transport deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2597-2599 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdTe epitaxial films were grown by a simple method of temperature gradient vapor transport deposition on p-InSb (111) orientation substrates in the growth temperature range between 200 and 300 °C. The stoichiometry of the CdTe/InSb heterostructure was observed by Auger electron spectroscopy, and Auger depth profiles demonstrated that the CdTe/InSb heterointerface was not abrupt. Transmission electron microscopy verified the formation of an interfacial layer in the CdTe/InSb interface and the formation of the stacking faults in the CdTe thin film. These results indicated that the films grown at approximately 270 °C contained a formation problem of an interfacial layer due to interdiffusion from the InSb prior to the growth of the CdTe, and that the interfacial layer might deteriorate the electrical property of the CdTe epitaxial layer. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112579
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  • 5
    Electronic Resource
    Electronic Resource
    Interfacial stages of the ZnTe/GaAs strained heterostructures grown by temperature-gradient vapor transport deposition at low temperature (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2526-2528 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A lattice-mismatched ZnTe epilayer on a GaAs (100) substrate was grown by the simple method of temperature-gradient vapor deposition. From the x-ray diffraction analysis, the grown layers were found to be ZnTe epitaxial films. The stoichiometry of the ZnTe films was investigated by Auger electron spectroscopy. Transmission electron microscopy measurements showed that there was a large lattice mismatch between the ZnTe epitaxial layer and the GaAs substrate. These results indicate that ZnTe epitaxial films grown on GaAs substrates at 320 °C have no significant interdiffusion problems, and that pseudomorphic, fully strained ZnTe layers are observed for deposits after ten molecular layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111562
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  • 6
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing and the anomalous threshold voltage shift of metal-oxide-semiconductor structure in n+ polycrystalline silicon gate complementary metal-oxide-semiconductor technology (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 447-449 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An anomalous different threshold voltage shift between P-channel metal-oxide-semiconductor field effect transistor (P-MOSFET) and N-channel MOSFET under high temperature rapid thermal annealing (RTA) borophosphosilicate glass reflow has been studied using 1 μm n+ polygate complementary MOS technology. The boron transient enhanced outdiffusion and phosphorus pileup at channel surface, as well as the interface states generated due to the degradation of thin gate oxide under high RTA process, are proposed as the main sources of this anomalous shift. A detailed model is proposed to interpret the mechanism and some methods to solve the anomalous shift are suggested.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107910
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  • 7
    Electronic Resource
    Electronic Resource
    Ab initio studies of the conformations of methylamine and ethylenediamine: interaction forces affecting the structural stability (1994)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 98 (1994), S. 1129-1134 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100055a014
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  • 8
    Electronic Resource
    Electronic Resource
    Thin film polyaniline-polyaniline electrochemical cells (1993)
    Springer
    Journal of applied electrochemistry 23 (1993), S. 1031-1038 
    Details
    ISSN: 1572-8838
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Notes: Abstract Electrodeposited polyaniline (PANT) in the emeraldine oxidation state was used as the electrodes of open rechargeable cells containing 1 m HClO4 as the electrolyte. The cells could be charged at very high hourly rates to 85% of the redox charge in the leucoemeraldine-emeraldine transition of the polymer. Contrary to normal behaviour of rechargeable cells, the coulombic efficiency improved with increasing rates of charge injection and withdrawal. This is attributed to less charge being dissipated by self-discharge at high rates of discharge. The poor charge retention was caused by reactions between the charged electrodes and their environment. The decrease in cell voltage on standing may also be induced by internal redox reactions of PANT of different oxidation states present at the electrodes as a result of incomplete oxidation or reduction during cell operation. Ultraviolet (u.v.) spectroscopy of the charged electrodes identified mostly protonated leucoemeraldine at the negative electrode and pernigraniline at the positive electrode. The irreversibility in the oxidation from the emeraldine state to the pernigraniline state accounts mostly for the degeneration of cell performance after prolonged cycling.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00266125
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  • 9
    Electronic Resource
    Electronic Resource
    A polyaniline and Nafion® composite film as a rechargeable battery (1992)
    Springer
    Journal of applied electrochemistry 22 (1992), S. 512-516 
    Details
    ISSN: 1572-8838
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Notes: Abstract The charge-discharge characteristics of polyaniline (PAn)-Nafion®-PAn composite films used as rechargeable batteries were investigated. The batteries were formed chemically by sandwiching Nafion® between two thin layers of PAn-Nafion® composite in equilibrium with various electrolytes. It was found that cells with LiClO4 in propylene carbonate as electrolyte showed the highest capacity. The charge and discharge performance of the battery was almost independent of the choice of anions but was significantly affected by cation size. This may indicate that the insertion or removal of charge-compensating electrolyte cations from the composite layer was responsible for the redox of PAn during the charge and discharge cycles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01024090
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  • 10
    Electronic Resource
    Electronic Resource
    Rechargeable thin film batteries of polypyrrole and polyaniline (1992)
    Springer
    Journal of applied electrochemistry 22 (1992), S. 738-742 
    Details
    ISSN: 1572-8838
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Notes: Abstract Thin films of polypyrrole (PPy) and polyaniline (PANi) were electrochemically deposited on stainless steel substrate under potentiostatic control. Secondary batteries were assembled using these polymers as active electrode materials and propylene carbonate (PC) solutions of tetraethyl ammonium perchlorate (TEAP) as the electrolyte. In repeated charge and discharge tests, the all PANi cells performed better than the PPy-PANi cells in voltage characteristics, recyclability, charge retention and coulombic efficiency. There appears to be an optimum charging current for the polymer cells and charging the cells at rates notably different from the optimum value reduced the cell performance substantially. It is suggested that the cells operate under kinetic control and charging at extreme rates either reduces the participation of polymer redox in the overall cell operation or produces mass transfer limitations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01027503
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