Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 3275-3276
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
An adaptive ferroelectric field-effect transistor (FET) with a floating gate has been developed using a thin film of lead titanate ( PbTiO3) deposited on a n/p+ substrate by rf sputtering. This device utilizes the charge storage on the floating gate to control the n layer conductivity of a n/p+ Si substrate and performs a memory function, in which the drain conductance changes in proportion to the charge storage density on the floating gate. The device is a bulk channel field transistor structure and different from the conventional surface channel-type floating gate memory device. Thus, it possesses higher mobility and fast access time (〈160 ns). The FET has low write/erase voltages (≤10 V) and its write/erase cycles are more than 106. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.118034
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