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  • 1
    Electronic Resource
    Electronic Resource
    Growth and characterization of thin films of thallium(III) oxide by organometallic chemical vapor deposition (1991)
    s.l. : American Chemical Society
    Chemistry of materials 3 (1991), S. 72-77 
    Details
    ISSN: 1520-5002
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/cm00013a019
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  • 2
    Electronic Resource
    Electronic Resource
    X-ray double-crystal analysis of misorientation and strain in GaAs/Si and related heterostructures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1154-1160 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed x-ray double-crystal-diffractometry investigation of GaAs on Si tilted towards [110] direction has been carried out to understand the structure, misorientation, and residual stress present in this system. The structure of the GaAs epilayer is approximately triclinic, with the in-plane lattice parameters a and b being in most cases slightly larger than, and that along the growth direction c less than, the bulk GaAs. For vicinal angles between 0° and 5°, a tilt angle of up to 0.12° between GaAs and Si lattice is observed, inclined mostly in the same direction as the vicinal angle, but also having a small component in a perpendicular direction. A residual tensile stress of the order of 109 dyn/cm2 exists in the epilayer, which can be accounted for by the difference in the thermal expansion coefficients of GaAs and Si. The strain due to the lattice parameter mismatch between the two materials is found to be negligibly small.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353282
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  • 3
    Electronic Resource
    Electronic Resource
    Double crystal x-ray analysis of strain distribution in rapid thermal annealed, S-implanted GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3964-3969 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Double crystal x-ray analysis has been carried out on GaAs wafers implanted with 1.15 MeV sulfur ions at a dose of 5×1014/cm2, followed by rapid thermal anneal for 10 s at temperatures between 300 and 1100 °C. A systematic reduction of strain with increased annealing temperature has been observed, as measured from the separation between the peak of the unimplanted substrate and the major peak of the strained region. Calculations of strain distribution based on existing numerical models are correlated with implantation parameters using Pearson's type-VI distribution functions. Strain reduction after a silicon nitride encapsulation process is found to be equivalent to that after a 300 °C, 10 s rapid thermal anneal (RTA). It is also found that strain relaxation by RTA is strongly dependent on both sample size and the annealing geometry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347166
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  • 4
    Electronic Resource
    Electronic Resource
    High-energy Si implantation into InP:Fe (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1750-1757 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-energy Si implantations were performed into InP:Fe at energies ranging from 0.5 to 10 MeV for a dose of 3×1014 cm−2, and at 3 MeV for the dose ranging from 1×1014 to 2×1015 cm−2. The first four statistical moments of the Si-depth distribution, namely range, longitudinal straggle, skewness, and kurtosis, were calculated from the secondary-ion mass spectrometry (SIMS) data of the as-implanted samples. These values were compared with the corresponding trim-89 calculated values. SIMS depth profiles were closely fitted by Pearson IV distributions. Multiple implantations in the energy range from 50 keV to 10 MeV were performed to obtain thick n-type layers. Variable temperature/time halogen lamp rapid thermal annealing (RTA) cycles and 735 °C/10-min furnace annealing were used to activate the Si implants. No redistribution of Si was observed for the annealing cycles used in this study. Activations close to 100% were obtained for 3×1014-cm−2 Si implants in the energy range from 2 to 10 MeV for 875 °C/10-s RTA. Transport equation calculations were used to interpret low activation results for high dose Si implants. Polaron electrochemical C–V profiling was used to obtain carrier concentration depth profiles. The lattice quality of the as-implanted and annealed material was evaluated by performing x-ray rocking curve measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349515
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  • 5
    Electronic Resource
    Electronic Resource
    Dependence of InAs phonon energy on misfit-induced strain (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3434-3436 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transverse-optical (TO) phonon energy in strained InAs quantum wells has been investigated by using far-infrared absorption. We observe that the TO phonon energy decreases when the misfit-induced biaxial tension in the InAs single quantum well is increased. Our result shows a stronger phonon energy dependence on the strain than the one reported by Cerdeira et al. [Phys. Rev. B 5, 580 (1972)]. The discrepancy may be explained by stress relaxation near the surface in their experiment. The application of our result will be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110137
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  • 6
    Electronic Resource
    Electronic Resource
    Accurate determination of effective quantum well thickness: Infrared absorption by transverse-optical phonons (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 583-585 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied far infrared transmission spectra of various AlSb/InAs/AlSb single quantum wells, where the well width ranges from 60 to 200 A(ring). Because the quantum well is thin, the far infrared absorption due to transverse-optical phonons is not saturated. We obtained excellent fitting to the transmission spectra by taking into account the complex dielectric functions with a transfer matrix formalism. The thickness of InAs quantum wells can be determined with monolayer resolution. High-resolution transmission electron microscopy shows clear lattice images in a region away from the AlSb/InAs interfaces. The thickness of the pure nonintermixed InAs region is in excellent agreement with our far infrared absorption results. Phonon absorption can therefore provide a nondestructive method to effectively determine the number of pure InAs monolayers, in spite of interdiffusion occurring at the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107844
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  • 7
    Electronic Resource
    Electronic Resource
    X-ray rocking curve measurement of composition and strain in Si-Ge buffer layers grown on Si substrates (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 825-827 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The level of strain and the fraction of Ge in SiGe layers grown on Si can be found rapidly and unambiguously using double-crystal x-ray diffraction and a simple application of the linear elasticity theory combined with Vegard's law. The method gives excellent results for 0.4-μm-thick buffer layers of SiGe/Si containing 5%–50% germanium. It is shown that lattice relaxation rises abruptly at x(Ge)≥15%, and that some strain remains for x(Ge) as high as 50%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104501
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  • 8
    Electronic Resource
    Electronic Resource
    Implantation damage in GaAs-AlAs superlattices of different layer thickness (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1338-1340 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report that two GaAs-AlAs superlattices of different layer thickness show dramatically different crystal damage when ion irradiated under identical conditions. The samples, held at 77 K, were implanted with 100 keV 28Si at doses of 3×1013 cm−2 to 1×1015 cm−2. Ion channeling results show amorphization threshold doses of 1×1015 cm−2 for the 7.0 nm GaAs-8.5 nm AlAs superlattice and 4×1014 cm−2 for the 3.5 nm GaAs-5.0 nm AlAs superlattice. At low doses, the shorter period superlattice was more robust, with no damage peak observed in ion channeling spectra for doses as high as 1×1014 cm−2. For a dose of 7×1013 cm−2, double crystal x-ray diffraction measurements show a 6 arcsec broadening of the (004) peak, relative to that of the unimplanted sample, for both superlattices. However, only the finer period superlattice exhibits a broadening (10 arcsec) of the (224) diffracted peak indicating a distortion in an additional direction. A mechanism involving the formation of slightly misaligned crystal domains is suggested to describe the behavior of the finer period superlattice.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105493
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  • 9
    Electronic Resource
    Electronic Resource
    Solid-phase regrowth of amorphous GaAs grown by low-temperature molecular-beam epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 320-321 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have shown that solid-phase recrystallization of an amorphous GaAs film can form a single-crystal film. We observed the phenomenon in GaAs, deposited by molecular-beam epitaxy at a growth temperature (Tg) of 190 °C and annealed at 775 or 850 °C. Observations in the transmission electron microscope indicate that annealing brings about a lower degree of As precipitation in the as-grown amorphous films (Tg〈215 °C) than in the as-grown single-crystal films (340 °C(approximately-greater-than)Tg(approximately-greater-than)215 °C). The lower degree of As precipitation in the initially amorphous material appears to insure a high concentration of As donors rather than a high concentration of resistivity increasing As precipitates. Electrical measurements show that the low-range (Tg〈215 °C) annealed sample has an extremely high n-type carrier concentration (1018 cm−3) and mobility (800 cm2 V−1 s−1).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110057
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  • 10
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    X‐ray rocking curve measurement of composition and strain in Si‐Ge buffer layers grown on Si substrates (1991)
    American Institute of Physics
    Details
    Publication Date: 1991-02-25
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
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