ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    CONTRIBUTIONS OF RAINFALL TO CONSTITUENT LOADS IN STORM RUNOFF FROM URBAN CATCHMENTS (1987)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of the American Water Resources Association 23 (1987), S. 0 
    Details
    ISSN: 1752-1688
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Architecture, Civil Engineering, Surveying , Geography
    Notes: : Rainfall is a significant source of some constituents, particularly nitrogen species, in storm runoff from urban catchments. Median contributions of rainfall to storm runoff loads of 12 constituents from 31 urban catchments, representing eight geographic locations within the United States, ranged from 2 percent for suspended solids to 74 percent for total nitrite plus nitrate nitrogen. The median contribution of total nitrogen in rainfall to runoff loads was 41 percent. Median contributions of total-recoverable lead in rainfall to runoff loads varied by as much as an order of magnitude between catchments in the same geographic location. This indicates that average estimates of rainfall contributions to constituent loading in storm runoff may not be suitable in studies requiring accurate constituent mass-balance computations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1752-1688.1987.tb02964.x
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Interfacial roughness in InAs/GaSb superlattices (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3476-3478 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using high-resolution transmission electron microscopy (HRTEM), we have studied InAs/GaSb superlattices grown by molecular beam epitaxy. Our HRTEM observations indicate that the apparent interface width is on the order of 1 monolayer for InSb-like interfaces, and on the order of 2 monolayers for GaAs-like interfaces. The combination of these results with x-ray diffraction and Raman scattering measurements leads us to conclude that these interface widths are principally due to roughness rather than to interfacial diffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111245
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Electronic properties of silicon δ-doped InSb (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 671-675 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated magneto-transport and cyclotron resonance (CR) of two-dimensional electron gas in silicon δ-doped p-InSb under a magnetic field of up to 12 T at 4.2 K. Because there are multiple subbands occupied, Shubnikov–de Haas oscillations show a beating behavior. The CR spectra also display several peaks originating from different subbands. Effective masses of electrons associated with the lowest three subbands can therefore be directly determined, and they are in excellent agreement with a self-consistent calculation, which takes into account the electrostatic Poisson equation, the Schrödinger equation, and realistic sample parameters. Furthermore, we observed an absorption peak, whose resonance position has anomalous angle dependence. It is attributed to impurity CR where donors are in the vicinity of the δ-doped sheet.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351850
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Use of atomic layer epitaxy buffer for the growth of InSb on GaAs by molecular beam epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7166-7172 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A 300 A(ring) buffer layer of InSb grown by atomic layer epitaxy at a substrate temperature of 300 °C at the GaAs/InSb interface has been employed to grow epitaxial films of InSb having bulk-like properties. The reduction of the defects in the top InSb film has been observed with cross-sectional transmission electron microscopy and channeling Rutherford backscattering spectroscopy. The optimum substrate temperature for the primary InSb layer growth was 420 °C with an atomic flux ratio of Sb to In of 1.4 and a growth rate of 1 μm/h. The best 5-μm-thick InSb layers had x-ray rocking curve widths of 100 s, 77 K n-type carrier concentrations in the low 1015/cm3 range, and 77 K carrier mobilities greater than 105 cm2/V s. Mesa isolated photodiodes had carrier lifetimes of 20 ns, in comparison to 200 ns observed in bulk InSb having a similar carrier concentration. An unexplained, weak free-electron spin resonance transition has been observed in these films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347608
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Dependence of InAs phonon energy on misfit-induced strain (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3434-3436 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transverse-optical (TO) phonon energy in strained InAs quantum wells has been investigated by using far-infrared absorption. We observe that the TO phonon energy decreases when the misfit-induced biaxial tension in the InAs single quantum well is increased. Our result shows a stronger phonon energy dependence on the strain than the one reported by Cerdeira et al. [Phys. Rev. B 5, 580 (1972)]. The discrepancy may be explained by stress relaxation near the surface in their experiment. The application of our result will be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110137
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Accurate determination of effective quantum well thickness: Infrared absorption by transverse-optical phonons (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 583-585 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied far infrared transmission spectra of various AlSb/InAs/AlSb single quantum wells, where the well width ranges from 60 to 200 A(ring). Because the quantum well is thin, the far infrared absorption due to transverse-optical phonons is not saturated. We obtained excellent fitting to the transmission spectra by taking into account the complex dielectric functions with a transfer matrix formalism. The thickness of InAs quantum wells can be determined with monolayer resolution. High-resolution transmission electron microscopy shows clear lattice images in a region away from the AlSb/InAs interfaces. The thickness of the pure nonintermixed InAs region is in excellent agreement with our far infrared absorption results. Phonon absorption can therefore provide a nondestructive method to effectively determine the number of pure InAs monolayers, in spite of interdiffusion occurring at the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107844
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Control of interface stoichiometry in InAs/GaSb superlattices grown by molecular beam epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 949-951 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The InAs/GaSb materials system, with different species for both cations and anions, allows one to envision the construction of heterojunctions with either InSb- or GaAs-like interfaces. As a result, this system provides a unique opportunity to explore the limits of interfacial control that can be achieved at the monolayer level by vapor phase growth techniques. Using migration-enhanced epitaxial techniques, we have prepared a series of InAs/GaSb superlattices with both types of interfaces. The large differences in bond lengths and vibrational properties of InSb and GaAs interfaces allow x-ray diffraction and Raman spectroscopy to be sensitive probes of interfacial structure. The x-ray and Raman measurements reveal that it is possible to grow superlattices with almost pure InSb-like or GaAs-like interfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109854
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Determination of band gap and effective masses in InAs/Ga1−xInxSb superlattices (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 207-209 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAs/Ga1−xInxSb superlattices have been investigated by magneto-optical and magnetotransport techniques. Band gaps, determined from interband magneto-optical measurements and from the temperature dependence of the intrinsic carrier concentration, are in the long wavelength infrared region (8.3–12.4 μm) and are in good agreement with gaps calculated from a two-band model. Both electron and hole effective masses were measured by cyclotron resonance and the electron effective mass is found to be a factor of 4–5 larger than in HgCdTe (the industry standard IR material). This is necessary for reduced dark currents and good optical absorption coefficients in this material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108219
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    In situ determination of flux nonuniformities during molecular beam epitaxial growth (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1317-1319 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed an amplitude modulation superimposed on growth induced reflection high energy electron diffraction (RHEED) oscillations in molecular beam epitaxial growth of GaAs, AlSb, and GaSb. An analysis of spatially resolved luminescence measurements from a single GaAs/Al0.3Ga0.7As quantum well and RHEED oscillation data verifies an earlier suggestion of Van Hove and co-workers that this modulation is related to nonuniform group III fluxes at the substrate. This phenomenon is very useful because it allows a quantitative in situ determination of group III flux nonuniformity. Furthermore, this study indicates that theories relating the decay of the RHEED oscillations to growth induced roughening of the surface should account for modifications that arise in the apparent decay rate because of flux nonuniformities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105486
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Large temperature changes induced by molecular beam epitaxial growth on radiatively heated substrates (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2338-2340 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed optical transmission measurements on radiatively heated GaAs substrates as a function of molecular beam epitaxial growth of InAs, GaSb, AlSb, and GaAs films. The energy gap of the GaAs substrate is observed to decrease strongly in energy when materials with band gaps smaller than GaAs are deposited. This decrease in energy gap is a consequence of a substantial increase in growth temperature induced by the deposition of the film. We have observed increases in temperature of over 150 °C from the temperature measured before film growth. Because the thermocouple is weakly coupled to the radiatively heated substrate, conventional temperature controllers are ineffective at measuring or accounting for this change in temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108236
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...