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  • American Institute of Physics (AIP)  (2)
  • 1990-1994  (2)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Studies of InSb metal-oxide-semiconductor structure fabricated by photochemical vapor deposition using Si2H6 and N2O (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2335-2338 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon oxide films (SiOx,0〈x〈2) have been prepared by photolysis of disilane (Si2H6) with nitrous oxide (N2O) at temperature below 200 °C using 2537-A ultraviolet light. Ellipsometric studies prove that the refractive index and etching rate of the photo-oxide films depend on the substrate temperatures and gas ratio. Composition and electrical properties of the interface (SiOx/InSb) are discussed by using Auger electron spectroscopy and metal-oxide-semiconductor capacitors. Hysteresis-free capacitance-voltage characteristics measured at 77 K are attained and the minimum interface state density is only 1.5×1011 cm−2 eV−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348967
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of substrate temperature on the properties of SiO2/InP structure prepared by photochemical vapor deposition (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3350-3353 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The InP metal-oxide-semiconductor structure using SiO2 film as an insulator was deposited by mercury-sensitized photoinduced chemical vapor deposition ultilizing a gaseous mixture of silane (SiH4 ) and nitrous oxide (N2 O) under 253.7-nm ultraviolet light irradiation. The structural and electrical properties of the deposited film were then evaluated with emphasis on the substrate temperature dependence. An increase of the substrate temperature (Tsub ) has effects of increasing the refractive index and decreasing the etching rate, oxide charge density, and interface state density. Postoxidation annealing in a N2 environment at 300 °C decreases the interface states as well as the oxide charge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345372
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    Paper (German National Licenses)
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