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Effect of substrate temperature on the properties of SiO2/InP structure prepared by photochemical vapor deposition (1990)

Huang, C. J. ; Su, Y. K.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 67 (1990), S. 3350-3353

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The InP metal-oxide-semiconductor structure using SiO2 film as an insulator was deposited by mercury-sensitized photoinduced chemical vapor deposition ultilizing a gaseous mixture of silane (SiH4 ) and nitrous oxide (N2 O) under 253.7-nm ultraviolet light irradiation. The structural and electrical properties of the deposited film were then evaluated with emphasis on the substrate temperature dependence. An increase of the substrate temperature (Tsub ) has effects of increasing the refractive index and decreasing the etching rate, oxide charge density, and interface state density. Postoxidation annealing in a N2 environment at 300 °C decreases the interface states as well as the oxide charge.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.345372

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