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Studies of InSb metal-oxide-semiconductor structure fabricated by photochemical vapor deposition using Si2H6 and N2O (1991)

Huang, C. J. ; Su, Y. K. ; Leu, R. L.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 69 (1991), S. 2335-2338

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Silicon oxide films (SiOx,0〈x〈2) have been prepared by photolysis of disilane (Si2H6) with nitrous oxide (N2O) at temperature below 200 °C using 2537-A ultraviolet light. Ellipsometric studies prove that the refractive index and etching rate of the photo-oxide films depend on the substrate temperatures and gas ratio. Composition and electrical properties of the interface (SiOx/InSb) are discussed by using Auger electron spectroscopy and metal-oxide-semiconductor capacitors. Hysteresis-free capacitance-voltage characteristics measured at 77 K are attained and the minimum interface state density is only 1.5×1011 cm−2 eV−1.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.348967

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