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  • 1990-1994  (15)
  • 1985-1989  (14)
  • 1975-1979  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    The effect of InP substrate misorientation on GaInAs-AlInAs interface and alloy quality (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3476-3480 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quality of GaInAs-AlInAs epitaxial layers is found to be critically dependent on the degree of (100)-InP substrate misorientation. The alloy quality of both materials is improved when the substrate is misoriented 4° off the (100). The heterojunction interface quality as determined by the full width at half-maximum of quantum-well photoluminescence is also improved when a substrate misoriented by 4° is used. A degradation of both alloy and interface quality as compared to material on (100) InP is observed when the misorientation is 2°. These effects are also observed for strained quantum-well structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341482
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  • 2
    Electronic Resource
    Electronic Resource
    GaxIn1−xAs/AlAs resonant tunneling diodes grown by atmospheric pressure metalorganic chemical vapor deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2159-2161 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the growth of GaxIn1−xAs/AlAs double-barrier heterostructures on InP and the fabrication of GaxIn1−xAs/AlAs resonant tunneling diodes (RTDs) by metalorganic chemical vapor deposition (MOCVD). High resolution x-ray diffraction measurements were used to evaluate the heterostructure interface quality. The RTDs achieved a room-temperature peak to valley ratio of 7.7:1 with peak current density of 9.6×104 A/cm2. These are the best reported room-temperature results for any reported RTDs grown by MOCVD. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112748
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of doping variations on electron transport in GaAs n+-n-n+ structures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5695-5701 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron transport properties in GaAs n+-n-n+ structures with varying doping profiles (in the direction of electron transport) are investigated using self-consistent ensemble Monte Carlo simulations. In particular, we study the effects of ramp doping [i.e., linearly increasing (ramp-up) or decreasing (ramp-down) doping density within the n region] and spike doping (i.e., introducing one or more n+ spikes in the n region) on electron transport to assess differences, advantages, and potential applications of these doping profiles on device performance. Underlying physical mechanisms for electron transport in these structures are analyzed. Simulation results reveal that overall electron transport can be improved significantly by employing ramp-up (rather than ramp-down) doping and multispike (instead of single-spike) doping schemes. Potential advantages of variable doping in field-effect transistor applications include enhanced current drive capability, reduced source resistance, and improved breakdown characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351920
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  • 4
    Electronic Resource
    Electronic Resource
    Observation of impurity effects on the nucleation of arsenic precipitates in GaAs (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 169-171 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The precipitation of arsenic in low temperature GaAs uniformly doped with Si and Be has been studied by transmission electron microscopy. Following an in situ anneal at 600 °C, precipitate size and density is found to be strongly dependent on the dopant type. Impurities at the epilayer/substrate interface lead to heterogeneous nucleation of precipitates. Although precipitates were observed to nucleate heterogeneously at threading dislocations, the precipitates predominantly form homogeneously. These results are consistent with the general theory of precipitation in solids.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109360
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  • 5
    Electronic Resource
    Electronic Resource
    Observation of arsenic precipitates in GaInAs grown at low temperature on InP (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2209-2211 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal Ga1−xInxAs (x=0.4) grown on InP by molecular-beam epitaxy at low substrate temperatures (250–150 °C) has been examined by transmission electron microscopy. Arsenic precipitates were observed following an ex situ anneal at 550 °C. The precipitates coarsen during higher-temperature anneals at 600 and 700 °C. Microstructure dependence on the growth temperature was similar to that observed in low-temperature grown GaAs. Arsenic precipitate volume fraction increased with decreasing growth temperature, with a measured maximum value of ∼0.4%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109418
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  • 6
    Electronic Resource
    Electronic Resource
    Investigation of the electronic properties of in situ annealed low-temperature gallium arsenide grown by molecular beam epitaxy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2005-2007 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current conduction through in situ annealed low-temperature gallium arsenide (LT GaAs) grown by molecular beam epitaxy (MBE) has been studied using Schottky diodes. The dominant transport mechanism in these films was found to be space-charge-limited current conduction in the presence of deep level states. We also examined two LT GaAs films, one with initially 4000 A(ring) thick subsequently etched back to 2000 A(ring) and the other sample with an initial thickness of 2400 A(ring), and found that the excess arsenic redistribution or clustering, carrier trap levels, and concentration depend strongly on the initial thickness of the LT GaAs film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107125
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  • 7
    Electronic Resource
    Electronic Resource
    Comparison of radionuclides levels from the Chernobyl reactor accident and from global fallout (1990)
    Springer
    Journal of radioanalytical and nuclear chemistry 138 (1990), S. 119-125 
    Details
    ISSN: 1588-2780
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering
    Notes: Abstract Studies on radioactive fallout from atmospheric nuclear weapons tests have been carried out at this laboratory since the mid-fifties. The data thus generated on the levels and composition of radioactive fallout in India has been published periodically. Consequent to the Chernobyl reactor accident in the USSR in April 1986, similar studies were carried out. A number of fairly active samples were collected from commercial aircraft which had flown over the USSR soon after the accident. Even though the levels of fallout from the Chernobyl reactor accident observed in India were not significant from a health hazard view point, the studies provided detailed information on differences in the composition of fallout from the accident and long term radiation exposures likely to accrue from the Chernobyl fallout as opposed to global fallout from atmospheric nuclear weapons tests. This paper presents the results and their interpretation on the above aspects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02049354
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  • 8
    Electronic Resource
    Electronic Resource
    Enhanced/suppressed interdiffusion of lattice-matched and pseudomorphic III–V heterostructures by controlling Ga vacancies (1991)
    Springer
    Optical and quantum electronics 23 (1991), S. S805 
    Details
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Data are presented showing that the interdiffusion of Ga and Al (AlGaAs-GaAs) and of Ga and In (pseudomorphic InGaAs-GaAs) at a heterojunction can be significantly enhanced or suppressed by controlling group III vacancies and interstitials. High resistivity low-temperature GaAs which contains excess As is shown to accelerate the interdiffusion process. The emission wavelength from monolayer-thick quantum wells can remain relatively unchanged even after annealing for 200 h at 850° C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00624971
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  • 9
    Electronic Resource
    Electronic Resource
    Wet deposition of cadmium, lead and copper at Deonar (Bombay) and its relationship with rainfall (1985)
    Springer
    Water, air & soil pollution 25 (1985), S. 63-71 
    Details
    ISSN: 1573-2932
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Notes: Abstract The concentrations of Cd, Pb, and Cu were measured by Differential Pulse Anodic Stripping Voltammetry for event rainwater samples collected at Deonar (Bombay). A relationship between measured wet deposition of these trace metals and amount of rainfall is calculated. The power law exponent of 0.6 is found suitable to describe the relationship between wet deposition and rainfall amount of monsoonal rain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00159625
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  • 10
    Electronic Resource
    Electronic Resource
    Simultaneous multielement determination of chewing and snuff tobaccos used in India by INAA (1986)
    Springer
    Journal of radioanalytical and nuclear chemistry 98 (1986), S. 297-301 
    Details
    ISSN: 1588-2780
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering
    Notes: Abstract Trace elements present in Indian cigarette tobacco and cigarette smoke have been reported earlier. This paper presents trace element concentrations in chewing and snuff tobaccos determined by Instrumental Neutron Activation Analysis. The levels of Br, Co, Cr, Fe, Mn, Zn, etc., present in different brands of chewing and snuff tobaccos are compared in two types of tobacco as well as with similar data from other countries.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02037092
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