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  • 1
    Electronic Resource
    Electronic Resource
    Fluorescence lifetimes of supersensitizing systems and dyes adsorbed onto TiO"2
    Amsterdam : Elsevier
    Journal of Photochemistry and Photobiology A: Chemistry 65 (1992), S. 399-407 
    Details
    ISSN: 1010-6030
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/1010-6030(92)80021-M
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  • 2
    Electronic Resource
    Electronic Resource
    Singlet-singlet intramolecular energy and electron transfer in covalently-linked porphyrin-phthalocyanine heterodimers
    Amsterdam : Elsevier
    Journal of Photochemistry and Photobiology A: Chemistry 72 (1993), S. 163-168 
    Details
    ISSN: 1010-6030
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/1010-6030(93)85023-2
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  • 3
    Electronic Resource
    Electronic Resource
    Reciprocal regulation of CD4/CD8 expression by SWI/SNF-like BAF complexes (2002)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 418 (2002), S. 195-199 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Thymic development produces two sub-lineages of T cells expressing either CD4 or CD8 co-receptors that assist antibody production and mediate cell killing, respectively. The mechanisms for mutually exclusive co-receptor expression remain poorly defined. We find that mutations in the high ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature00876
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  • 4
    Electronic Resource
    Electronic Resource
    Construction of higher-moment terms in the hydrodynamic electron-transport model (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6197-6207 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A critical step in the development of all hydrodynamic transport models (HTMs), derived from moments of the Boltzmann transport equation, is the introduction of accurate closure relations to terminate the resulting infinite set of macroscopic equations. In general, there are a number of resulting integral terms that are highly dependent on the form of the true electron distribution function. The so-called heat flux term is one very important higher-moment term that requires attention. Methods for the accurate construction of an improved heat-flux model are presented. In this construction, a higher-moments approach is combined with a unique definition of electron temperature (i.e., based upon an ansatz distribution) to investigate the effects of conduction-band nonparabolicity and distributional asymmetry. The Monte Carlo method has been used to evaluate the resulting model closures and to study microscopic electron dynamics. These investigations have identified an important relationship between a particular symmetric (i.e., thermal) component of the electron distribution function and the heat flow vector. This knowledge is important because all the parameters in the HTM must be closed (i.e., related to each other through a common set of system variables) before the technique can be accurately applied to the study of electron transport in semiconductor devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355189
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of doping variations on electron transport in GaAs n+-n-n+ structures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5695-5701 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron transport properties in GaAs n+-n-n+ structures with varying doping profiles (in the direction of electron transport) are investigated using self-consistent ensemble Monte Carlo simulations. In particular, we study the effects of ramp doping [i.e., linearly increasing (ramp-up) or decreasing (ramp-down) doping density within the n region] and spike doping (i.e., introducing one or more n+ spikes in the n region) on electron transport to assess differences, advantages, and potential applications of these doping profiles on device performance. Underlying physical mechanisms for electron transport in these structures are analyzed. Simulation results reveal that overall electron transport can be improved significantly by employing ramp-up (rather than ramp-down) doping and multispike (instead of single-spike) doping schemes. Potential advantages of variable doping in field-effect transistor applications include enhanced current drive capability, reduced source resistance, and improved breakdown characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351920
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  • 6
    Electronic Resource
    Electronic Resource
    Influence of DX centers and surface states on δ-doped high-electron-mobility transistor performance (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4123-4128 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The roles of DX centers and surface states associated with the n-AlGaAs layer of δ-doped AlGaAs/GaAs high-electron-mobility transistors have been investigated by employing a two-dimensional, self-consistent ensemble Monte Carlo simulation. It is found that both DX centers and surface states degrade device performance, particularly as gate-to-source voltage increases. This degradation is manifested largely through reduced channel electron concentration, increased intervalley scattering, and enhanced real-space transfer. Of the two defect states, DX centers have more detrimental influence on drain current and transconductance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348425
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  • 7
    Electronic Resource
    Electronic Resource
    An investigation of the effects of doping profile variations on AlGaAs/GaAs high electron mobility transistor performance (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4593-4600 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present results from a theoretical study of the influence of doping profile variations on the performance of delta-doped AlGaAs/GaAs high electron mobility transistors (HEMTs). An ensemble Monte Carlo simulation coupled with a self-consistent solution of the two-dimensional Poisson equation is used to investigate HEMTs which employ both single and double delta-doped profiles with varying doping configurations. The calculated results reveal that single delta-doped HEMTs designed with identical threshold voltages exhibit improved device behavior when thinner delta-doped layers with more heavily doped concentrations are utilized. For double delta-doped HEMTs with an identical total doping in the AlGaAs layer, improved threshold voltage control is obtained as the spacing between two delta-doped layers increases. However, this increase in spacing also causes a degradation in transconductance, cut-off frequency, and switching time. As gate bias increases, the dependence of device performance (or degradation) on the spacing between doping planes becomes less pronounced due to the upward shift in threshold or "onset'' of parallel conduction in the AlGaAs layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349096
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  • 8
    Electronic Resource
    Electronic Resource
    Electron velocity-field characteristics of In0.52Al0.48As (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1202-1204 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theoretical results of electron transport in n-type In0.52Al0.48As are presented. The transport properties of this important semiconductor were obtained using the Monte Carlo method. In particular, velocity-electric field characteristics for different temperatures and doping concentrations in bulk In0.52Al0.48As are calculated for the first time. Physical parameters for In0.52Al0.48As (which is lattice-matched to InP and In0.53Ga0.47As) were obtained based on interpolation of available experimental and theoretical results for InAs, AlAs, and In0.75Al0.25As. Our study suggests that In0.52Al0.48As has electron transport properties which are comparable to and complimentary with those of other materials lattice-matched to InP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107594
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  • 9
    Electronic Resource
    Electronic Resource
    Novel charge injection transistors with heterojunction source (launcher) and drain (blocker) configurations (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 174-176 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of a theoretical study of novel charge injection transistors (CHINTs) with heterojunction source and drain are presented. The proposed device structures employ a wide band-gap (with respect to the channel) material as the device source and/or drain regions, in contrast to the conventional, homojunction source (drain) CHINT structure. It is demonstrated that the spatial location of real-space transfer (RST) is strongly dependent on the initial energy of injected electrons in these devices. The introduction of source and drain heterojunctions serves for enhancing the RST effect and for the blocking electrons which constitute leakage current. Results from two-dimensional, self-consistent ensemble Monte Carlo simulations reveal that the proposed CHINTs feature increased current drive capability, reduced drain leakage current, and faster switching speed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110390
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  • 10
    Electronic Resource
    Electronic Resource
    Cell-Layer Interactions Influence the Number and Position of Lateral Shoot Meristems in Nicotiana
    Amsterdam : Elsevier
    Developmental Biology 162 (1994), S. 579-589 
    Details
    ISSN: 0012-1606
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1006/dbio.1994.1111
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