ISSN:
1572-817X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract Data are presented showing that the interdiffusion of Ga and Al (AlGaAs-GaAs) and of Ga and In (pseudomorphic InGaAs-GaAs) at a heterojunction can be significantly enhanced or suppressed by controlling group III vacancies and interstitials. High resistivity low-temperature GaAs which contains excess As is shown to accelerate the interdiffusion process. The emission wavelength from monolayer-thick quantum wells can remain relatively unchanged even after annealing for 200 h at 850° C.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00624971