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  • 1995-1999  (417)
  • 1990-1994  (360)
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  • 1
    Unknown
    Basel, Boston, Berlin : Birkhäuser
    Description / Table of Contents: The 1993 Southwest Hokkaido Earthquake of Magnitude 7. 9 (July 12, 22: 17 JST) caused serious tsunami disasters in the southwestern part of Hokkaido, particularly on Okushiri Island (a tiny island off the southwest coast of Hokkaido with a population of about 4,500 at the time of earthquake). Of 230 casualties, including 28 missing, about 200 deaths are attributable to the tsunami. We have conducted detailed field surveys of tsunami disasters to learn lessons from this costly natural experiment for the future prevention of similar tsunami disasters. Our field work was conducted in four surveys totaling 39 days. During the first field survey (July 16 through July 21, 1994), we worked mostly on the estimation of the subsidence of Okushiri Island during the earthquake. Hence, our main work on tsunami disasters initiated from the second field survey (July 31 through Aug. 15, 1994). Several groups have conducted detailed surveys of the distribution of tsunami runup height as measured from the level of sea water (TsUJI et al. , 1 994a, b; MATSUTOMI and SHUTO, 1994; GOTO et al. , 1994). Such a precise runup height distribution is essential for characterizing tsunami, including its overall size. Indeed, the height distribution is the fundamental data for inferring earthquake source parameters through the simulation of tsunami generation (TAKAHASHI et al. , 1994; IMAMURA et al. , 1994; TSUJI et al. , 1994a; SATAKE and TANIOKA 1994; ABE, 1994; TANIOKA et al. , in review).
    Pages: Online-Ressource (VII, 517 Seiten)
    ISBN: 9783034872799
    Language: English
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 95 (1991), S. 155-165 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 207-210 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magneto-optical Faraday effect of plastic foils composed of cobalt fine particles fixed by polystyrene was investigated. Colloidal suspensions of the cobalt particles from 5 to 10 nm in diameter were prepared by thermal decomposition of dicobalt octacarbonyl dissolved by toluene. After that, polystyrene was added to the solution. The solution was then dried on glass receptacles, and foils 0.1 to 0.2 mm in thickness were obtained by peeling it off from the receptacles. The Faraday rotation spectra θF(λ) of the foils were quite different from those of a cobalt film and polystyrene. θF(λ) varied with the particle size and agglomerate state of particles during solidification.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 6182-6188 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The single-chip superconducting quantum interference device (SQUID) we made using niobium Josephson junctions integrates a two-junction SQUID and a superconducting feedback circuit. The switching probability, its derivative to input flux, and the flux spectral density measured by varying the sinusoidal bias frequency and amplitude agree well with thermal noise theory. The best sensitivity and cutoff frequency were 6.2×10−6 Φ0(large-closed-square)(square root of)Hz and 1.1 kHz for a bias frequency at 10 MHz. The dynamic range was 2.5×105. These data show the SQUID to be suited to practical biomagnetic application.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4152-4158 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Charge trapping in layered organic photoconductors consisting of a charge generation layer (CGL) and a charge transport layer (CTL) was studied by xerographic residual potential measurements. The residual potential builds up during repeated corona charging and light exposure cycles of photoconductors. The negative residual potential is proportional to the square of the CGL thickness and is linearly proportional to the CTL thickness. The square dependence is caused by the bulk trapping of electrons in the CGL, and the linear dependence is due to the negative charges on the CTL surface. From experimental results, it is concluded that the electron trapping in the CGL enhances the trapping of holes at the CGL/CTL interface, and consequently a fraction of negative corona charges remains on the CTL surface even after light exposure. The buildup of the residual potential during xerographic cycling is initiated by the electron trapping in the CGL. On the other hand, the decay rate of the residual potential after xerographic cycling depends on hole transport properties in the CTL. The activation energy for the decay of the residual potential is in good agreement with that for the drifting of holes through the CTL obtained from thermally stimulated current measurements. The decay rate of the residual potential is controlled by the surface charge neutralization process which involves the release of holes trapped at the CGL/CTL interface and the subsequent drifting of holes to the surface.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5284-5286 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper describes the fabrication and evaluation of dielectric-base transistors having high-Tc YBa2Cu3O7−x electrodes with NdGaO3 low-permittivity barriers on SrTiO3 high-permittivity substrates. The YBa2Cu3O7−x/NdGaO3/SrTiO3 heterostructures were made by laser ablation. Nb base electrodes were sputtered on the back of the SrTiO3 substrate. The device showed transistor characteristics with voltage and current gains exceeding unity at 4.2 K. The collector current density was about 10 A/cm2 at a collector voltage of 20 V, four orders of magnitude larger than that obtained for devices having no artificial barriers.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7549-7555 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A selective plasma oxidation method was developed to make superconducting patterns in nonsuperconducting deoxygenated YBa2Cu3O7−x (YBCO) films. Superconductor- nonsuperconductor-superconductor junctions were fabricated in oxygen-deficient c-axis-oriented polycrystalline YBCO films by selective plasma oxidation using Au/BaF2 oxidation masks. These devices displayed SNS-like or SIN-like nonlinear current-voltage relationships, depending on the device size and oxidation time. The oxygen penetration depth beneath the oxidation mask was estimated to be about 2 μm for the polycrystalline films. Oxygen supplied to 300-nm-thick films for 5 min changes its phase, determined from x-ray diffraction patterns, from tetragonal to orthorhombic I having a critical temperature of about 85 K. X-ray diffraction and magnetic susceptibility measurement showed that the plasma oxidation can supply oxygen to a deoxygenated 0.7×0.5×0.05 mm YBCO single crystal, changing the entire crystal from tetragonal to the orthorhombic II phase whose critical temperature is about 50 K. Four-probe resistance measurement of the plasma oxidized single crystal showed that the phase of the surface of the sample became orthorhombic I with the critical temperature of 84 K by plasma oxidation.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2969-2972 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We fabricated a Nb Josephson junction with a Nb/HfOx-Hf/HfN/Nb structure. The junction showed an excellent current-voltage characteristics (Vm = 40 mV), and these characteristics were not degraded with annealing at temperatures up to 350 °C. Each layer in the Hf/HfN double overlayer plays an important role in the junction structure. The Hf layer acts as a layer for the tunneling barrier formation and as an effective etch stop for a reactive ion etching process in junction fabrication. The HfN layer greatly contributes to the annealing durability of the junction by acting as an effective stop for grain boundary diffusion between the Nb and Hf layers.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6958-6965 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We developed plasma nitridation for superconducting Nb wiring to improve their annealing stability. Plasma nitridation was observed to be very effective in increasing the critical currents and improve annealing stability. We analyzed the nitride layer formed on the surface of Nb film by plasma nitridation, and found that it prevented oxygen diffusion in Nb. Plasma nitridation is a currently feasible process to improve the reliability of Nb wiring in Josephson circuit.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 2398-2406 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Ion-pair formation from photoexcitation of CF4 has been studied by negative-ion mass spectrometry using synchrotron radiation in the 11–31 eV photon energy range. Negative F− ions have been observed. The appearance energy in the F− photodissociation efficiency curve is about 2 eV higher than the thermochemical threshold for the formation of the ground-state ions F−(1Sg) and CF+3(X˜ 1A'1). The peak features observed in the spectrum are interpreted as resulting from transitions to Rydberg states with the 1T2 symmetry. Assignments of the peaks have been made on the basis of the previous work on photoabsorption cross-section curves of CF4. Repulsive Rydberg states converging to CF+4(X˜ 2T1, A˜ 2T2) give the strong and broad peaks in the F− efficiency curve. Conversion to the ion-pair state is considered to occur through the avoided potential surface crossings along the dissociation coordinate of the CF3—F bond. In contrast, the npt2 Rydberg states (n≥4) converging to CF+4(C˜ 2T2) show long vibrational progressions. The radiative and nonradiative decay pathways for these Rydberg states are discussed.
    Type of Medium: Electronic Resource
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