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  • 1
    Electronic Resource
    Electronic Resource
    Temperature-Jump Investigation of Adsorption/Desorption Kinetics at Methylated Silica/Solution Interfaces (1995)
    s.l. : American Chemical Society
    Analytical chemistry 67 (1995), S. 3441-3447 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac00115a012
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  • 2
    Electronic Resource
    Electronic Resource
    Thermal stability of W ohmic contacts to n-type GaN (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 278-281 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: W was found to produce low specific contact resistance (ρc∼8.0×10−5 Ω cm2) ohmic contacts to n+-GaN (n=1.5×1019 cm−3) with limited reaction between the metal and semiconductor up to 1000 °C. The formation of the β–W2N and W–N interfacial phases were deemed responsible for the electrical integrity observed at these annealing temperatures. No Ga out-diffusion was observed on the surface of thin (500 A(ring)) W contacts even after 1000 °C, 1 min anneals. Thus, W appears to be a stable contact to n+-GaN for high temperature applications. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362816
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  • 3
    Electronic Resource
    Electronic Resource
    Scanning Tunneling Microscopy, Tunneling Spectroscopy, and Photoelectrochemistry of a Film of Q-CdS Particles Incorporated in a Self-Assembled Monolayer on a Gold Surface (1995)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 99 (1995), S. 11182-11189 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100028a020
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  • 4
    Electronic Resource
    Electronic Resource
    A surface modification study of InGaP etched with an electron cyclotron resonance source at variable microwave powers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3286-3289 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Etch-induced surface modifications, utilizing an electron cyclotron resonance source, have been studied as a function of controllable etch parameters. InGaP was etched with BCl3 at a constant substrate temperature (100 °C) and bias voltage (−145 V) using microwave powers varying between 250 and 1000 W. The surface morphology, residual etch damage, and surface stoichiometry were strongly influenced by changes in ion flux. The etch-induced lattice damage and surface smoothness increased as the ion energy was elevated. Low ion flux etching resulted in an In-enriched P-depleted surface suggesting nonuniform desorption of InClx which gave rise to the surface roughness observed at the low microwave powers. The smooth surfaces, achieved at the higher microwave power levels, were attributed to either efficient sputter-assisted desorption of the InClx etch products or to InClx desorption via plasma-induced surface heating. Results of this study demonstrate that etching at microwave powers between 500 and 750 W induce low residual damage and smooth surfaces while maintaining a reasonable etch rate for device processing. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361227
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  • 5
    Electronic Resource
    Electronic Resource
    Nonalloyed high temperature ohmic contacts on Te-doped InP (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1845-1847 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a thermal stability study of WSi0.79 contacts on Te-doped InP. The epitaxial InP layers were grown on Fe-doped semi-insulating InP substrates by metalorganic molecular beam epitaxy. Tri-isopropylindium-di-isopropyltellurium was used as the Te precursor and the doping level was 1.4×1020 cm−3. Contact metal, amorphous WSi0.79, was sputtered from a composite and an excellent specific contact resistance of 1×10−6 Ω cm2 was achieved. The specific contact resistivity was also measured at different temperature (25–200 °C) and it stayed fair contact. This is clear indication that the current transport through the contact dominates by tunneling. After alloying at temperatures up to 600 °C, there is no obvious change of specific contact resistance or sheet resistance. After 700 °C annealing, there was significant P out-diffusion detected and the specific contact resistance began to degrade. However, the contact metal morphology and edge definition were unaffected. After 800 °C annealing, there was evidence of In out-diffusion after and the surface morphology became rough. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123688
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3893-3895 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ga2O3(Gd2O3) was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal–oxide–semiconductor field-effect transistor (MOSFET). Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal–semiconductor field-effect transistor fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 °C. Modeling of the effect of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122927
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  • 7
    Electronic Resource
    Electronic Resource
    Photoluminescence and x-ray photoelectron spectroscopy study of S-passivated InGaAs(001) (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3076-3082 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of sulfur passivation on the surface composition of In0.53Ga0.47As(001) was investigated with photoluminescence (PL) and x-ray photoelectron spectroscopy (XPS). Films of In0.53Ga0.47As(001), epitaxially grown on InP(100) substrates, were S passivated using a dry electron cyclotron resonance (ECR)-plasma deposition process and were either passivated as-prepared, or exposed to a BCl3 pre-etch prior to passivation. In the spectral range from 1450 to 1750 nm, S passivation enhances the PL yield by approximately an order of magnitude. XPS shows that S binds both to In and As, although preferably to In, and that oxidation is essentially eliminated by the passivation process. The In–S bonds are more stable upon annealing than are the As–S bonds. Furthermore, the pre-etched+H2S treatment enhances the PL yield beyond that of the H2S passivation treatment alone and produces a higher ratio of In–S to As–S bonds at the surface. In a second set of experiments, the influence of the ECR power applied to the sample during passivation was examined. The variation of this processing parameter has little effect on the surface composition. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363130
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  • 8
    Electronic Resource
    Electronic Resource
    High rate dry etching of InGaP in BCl3 plasma chemistries (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2497-2499 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A remarkable increase in InGaP etch rate in electron cyclotron resonance BCl3 discharges is observed as the microwave power is increased from 250 W (etch rate ∼500 A(ring)/min) to 1000 W (etch rate ∼8000 A(ring)/min). The surface roughness measured by atomic force microscopy decreases from 36 nm at 250 W to 2 nm at 1000 W. The high ion flux incident on the InGaP at high microwave powers appears to remove InClx species by sputter-assisted desorption and prevents formation of the nonstoichiometric In-rich surfaces generally observed with Cl2-based dry etching using conventional reactive ion etching. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114437
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  • 9
    Electronic Resource
    Electronic Resource
    Dry etch damage in inductively coupled plasma exposed GaAs/AlGaAs heterojunction bipolar transistors (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2410-2412 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dc current gain and emitter and base sheet resistance of C-doped GaAs/AlGaAs heterojunction bipolar transistors (HBTs) have been used to measure damage introduced by exposure to Ar inductively coupled plasmas (ICP). As the ICP source power is increased at fixed rf chuck power, the damage-induced changes in device characteristics are reduced due to a reduction in ion energy. Beyond a particular ICP source power (∼1000 W for 50 W rf chuck power), the damage increases due to the increase in ion flux, even though the ion energy is low (〈30 eV). These results are a clear demonstration of the advantage of high ion density plasmas for pattern transfer in damage-sensitive minority carrier devices such as HBTs.© 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118887
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  • 10
    Electronic Resource
    Electronic Resource
    Use of InN for Ohmic contacts on GaAs/AlGaAs heterojunction bipolar transistors (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1503-1505 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Degenerately doped (n=5×1020 cm−3) InN grown by metalorganic molecular beam epitaxy is used for emitter Ohmic contacts on GaAs/AlGaAs heterojunction bipolar transistors (HBTs). Both abrupt InN/GaAs and graded GaAs/InGaAs/InN contact structures were investigated. Although, the contact resistivity of nonalloyed Ti/Pt/Au on InN was achieved as low as 1.8×10−7 Ω cm2, formation of a thin GaN layer at the interface of the InN/GaAs system limits nonalloyed TiPtAu metallization to contact resistivities of 10−4 Ω cm2. Whereas the graded structure, GaAs/InGaAs/InN material, system produces values of 5×10−7 Ω cm2 which resulted in the formation of conductive InN from nitridation of InAs instead of the GaN layer for the InN/GaAs system. The InN-based emitter contacts have superior surface morphologies to the more conventional InAs layers. The C-doped base (p=7×1019 cm−3) HBTs utilizing 2×5 μm2 InN-based emitter contacts is demonstrated with dc gains of 35. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113669
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