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  • 1
    Electronic Resource
    Electronic Resource
    Thermal stability of W ohmic contacts to n-type GaN (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 278-281 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: W was found to produce low specific contact resistance (ρc∼8.0×10−5 Ω cm2) ohmic contacts to n+-GaN (n=1.5×1019 cm−3) with limited reaction between the metal and semiconductor up to 1000 °C. The formation of the β–W2N and W–N interfacial phases were deemed responsible for the electrical integrity observed at these annealing temperatures. No Ga out-diffusion was observed on the surface of thin (500 A(ring)) W contacts even after 1000 °C, 1 min anneals. Thus, W appears to be a stable contact to n+-GaN for high temperature applications. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362816
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  • 2
    Electronic Resource
    Electronic Resource
    A surface modification study of InGaP etched with an electron cyclotron resonance source at variable microwave powers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3286-3289 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Etch-induced surface modifications, utilizing an electron cyclotron resonance source, have been studied as a function of controllable etch parameters. InGaP was etched with BCl3 at a constant substrate temperature (100 °C) and bias voltage (−145 V) using microwave powers varying between 250 and 1000 W. The surface morphology, residual etch damage, and surface stoichiometry were strongly influenced by changes in ion flux. The etch-induced lattice damage and surface smoothness increased as the ion energy was elevated. Low ion flux etching resulted in an In-enriched P-depleted surface suggesting nonuniform desorption of InClx which gave rise to the surface roughness observed at the low microwave powers. The smooth surfaces, achieved at the higher microwave power levels, were attributed to either efficient sputter-assisted desorption of the InClx etch products or to InClx desorption via plasma-induced surface heating. Results of this study demonstrate that etching at microwave powers between 500 and 750 W induce low residual damage and smooth surfaces while maintaining a reasonable etch rate for device processing. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361227
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  • 3
    Electronic Resource
    Electronic Resource
    Low hydrogen content silicon nitride films from electron cyclotron resonance plasmas (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3277-3281 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The material and electrical properties of SiNx:H films deposited using a 2% SiH4/N2 mixture with additional N2 in an electron cyclotron resonance reactor have been evaluated. Deposition rate, refractive index, and stoichiometry have been determined using ellipsometry, Rutherford backscattering spectrometry, and infrared spectroscopy. Current-voltage and dielectric breakdown characteristics have been measured on metal-insulator-silicon structures. Stoichiometric material with a hydrogen content of 1.5 at. % is created using a ratio of SiH4/N2=0.003, P=2 mTorr, T=250 °C, and power=650 W. Hydrogen levels are reduced by using lower ratios of SiH4/N2, lower total pressure, or higher microwave power. Higher total pressure results in significantly enhanced deposition rates, but with greatly increased H and O content. The low-field resistivity of these films is largely independent of the process parameters over the range investigated. The dielectric breakdown strength is significantly greater in films deposited at higher temperature, but is somewhat degraded in films deposited at lower ratios of SiH4/N2, despite the higher density and lower hydrogen content of these films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355318
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetic characterization of epitaxial Y5FeeO12/Bi3Fe5O12 and Y5Fe3O12/Eu1Bi2Fe5 O12 heterostructures grown by pulsed laser deposition : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6287-6289 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Y3Fe5O12(YIG)/Bi3Fe5O12(BIG) and YIG/Eu1Bi2Fe5O12(EBIG) heterostructures have been grown on [111] oriented single-crystalline gadolinium-gallium-garnet substrates by pulsed laser deposition. The effects of the layer thickness ratios on the composition, microstructure, and magnetic properties of the films have been studied employing x-ray diffraction, Rutherford backscattering spectroscopy, vibration sample magnetometry, and Kerr magnetometry. All films under investigation are single crystalline, in the [111] orientation. The multilayered heterostructures displayed superior magnetic properties in comparison to their single crystalline monolayer counterparts, deposited at the same conditions. The YIG/BIG heterostructures indicate increased in-plane saturation magnetic moments, approaching the maximum saturation value in bulk YIG. The YIG/EBIG heterostructures show a definite reorientation of the magnetic moment in the out-of-plane direction, a new set of increased saturation magnetization values that go even above that recorded for the bulk YIG, as well as an increase in coercivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358307
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  • 5
    Electronic Resource
    Electronic Resource
    Accurately determining the composition and thickness of layers in a GaAs/InGaAs superlattice (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1609-1614 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The layer thicknesses and composition of molecular beam epitaxy grown four period 200 A(ring)/100 A(ring) GaAs/InGaAs superlattice structures with nominal indium concentrations of 10%, 15%, and 20% were determined by transmission electron microscopy, Rutherford backscattering spectroscopy, double crystal x-ray diffraction (DXRD), photoreflectance (PR), and photoluminescence (PL). The results show that the indium concentration obtained by DXRD is a little low and that obtained by PR and PL is a little high, and that the discrepancies are larger for the larger indium concentrations. We show that both discrepancies can be accounted for by relaxation of the lattice, elastic relaxation as represented by a radius of curvature, and/or plastic deformation as represented by mismatch of dislocations. For the case of elastic relaxation the tetragonal distortion is less than it would be if the sample were perfectly pseudomorphic. The fractions by which it is reduced for the 10%, 15%, and 20% samples was 0.91, 0.86, and 0.77 as determined by DXRD and 0.80, 0.78, and 0.85 as determined by PR/PL.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358461
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  • 6
    Electronic Resource
    Electronic Resource
    Damage center formation in SiO2 thin films by fast electron irradiation (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5176-5180 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The concentrations of E' centers (ESR-active oxygen vacancies) produced by 30–160 keV electron irradiation have been measured in thermal SiO2 films at doses far exceeding any previously reported. The dependences of these concentrations on electron energy and fluence were measured in both steam-grown and dry oxides. Results indicated that ionization rather than atomic displacement is the predominant formation mechanism. Significant differences in dose dependence were found between oxide types, reflecting the role of hydrogen in damage annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335252
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  • 7
    Electronic Resource
    Electronic Resource
    Growth and characterization of (Y3Fe5O12–Bi3Fe5O12) heterostructures by pulsed laser deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 830-832 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superlattice heterostructures consisting of alternating single crystalline ferrimagnetic yttrium–iron–garnet (YIG) and bismuth–iron–garnet (BIG) thin film layers on gadolinium–gallium–garnet substrates show an increased saturation magnetization with respect to that of the monolayered structures grown under the same conditions. The observed effect is attributed to the distortions introduced in the YIG layers by the adjacent BIG layers. In this letter, we report our growth approach, by pulsed laser deposition, of these unusually performing thin film heterostructures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113436
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  • 8
    Electronic Resource
    Electronic Resource
    Growth of epitaxial Pb(Zr,Ti)O3 films by pulsed laser deposition (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1643-1645 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lead zirconate titanate (PZT) thin films with a composition near the morphotropic phase boundary have been grown on MgO (100) and Y1Ba2Cu3Ox (YBCO) coated MgO substrates. Substrate temperature and oxygen pressure were varied to achieve ferroelectric films with a perovskite structure. Films grown on MgO had the perovskite structure with an epitaxial relationship with the MgO substrate. On the other hand, films grown on the YBCO/MgO substrate had an oriented structure to the surface normal with a misorientation in the plane parallel to the surface. The measured dielectric constant and loss tangent at 1 kHz were 670 and 0.05, respectively. The remnant polarization and coercive field were 42 μC/cm2 and 53 kV/cm. A large internal bias field (12 kV/cm) was observed in the as-deposited state of the undoped PZT films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108438
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  • 9
    Electronic Resource
    Electronic Resource
    Growth of single crystal Ge films on GaAs and InGaP and highly oriented Au films on Ge (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2697-2699 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystal germanium films were deposited on (100) GaAs and InGaP substrates, and highly oriented gold films were deposited on the germanium films by ultrahigh vacuum E-beam evaporation. They were characterized by double crystal x-ray diffraction (DXRD), transmission electron microscopy (TEM), Rutherford backscattering spectroscopy (RBS), Auger electron spectroscopy (AES), and scanning electron microscopy (SEM). The germanium film grew epitaxially with a smooth, abrupt interface, and the highly oriented gold film formed a smooth interface with the germanium and had a (100)Au(parallel)(100)Ge and (001)Au(parallel)[011]Ge or [001]Au(parallel)[0-1 1]Ge orientation relationship. Large grains with one or the other orientation relationship could be distinguished in the SEM. TEM micrographs show that the grains have a periodic dislocation pattern indicative of heteroepitaxy, and the grain boundaries appear to have a low energy. No contamination was detected in the gold film away from the interface with the germanium, and there was significant channeling of the RBS beam when it was normal to the gold film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111495
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  • 10
    Electronic Resource
    Electronic Resource
    Some effects of rotation rate on planetary — scale wave flows (1996)
    Springer
    Theoretical and applied climatology 55 (1996), S. 199-210 
    Details
    ISSN: 1434-4483
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences , Physics
    Notes: Summary A series of experiments was performed in a rotating annulus of fluid to study effects of rotation rate on planetary-scale baroclinic wave flows. The experiments reveal that change in rotation rate of fluid container causes variation in Rossby number and Taylor number in flows and leads to change in flow patterns and in phase and amplitude of quasi-stationary Waves. For instance, with increasing rotation rate, amplitude of quasi-stationary waves increases and phase shifts upstream. On the contrary, with decreasing rotation rate, amplitude of quasi-stationary waves decreases and phase shifts downstream. In the case of the earth's atmosphere, although magnitude of variation in earth's rotation rate is very small, yet it causes a very big change in zonal velocity component of wind in the atmosphere and of currents in the ocean, and therefore causes a remarkable change in Rossby number and Taylor number determining regimes in planetary-scale geophysical flows. The observation reveals that intensity and geographic location of subtropic anticyclones in both of the Northern and Southern Hemispheres change consistently with variation in earth's rotation rate. The results of fluid experiments are consistent, qualitatively, with observed phenomena in the atmospheric circulation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00864716
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