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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5242-5246 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe an optical-lithography-based sample preparation technique for measuring the current-perpendicular-to-plane (CPP) magnetoresistance with micron-size current-contact areas on top of magnetic multilayer samples of millimeter in-plane size. We use Permalloy and Co91Fe9 exchange bias spin valves to show that the CPP specific magnetoresistance (area times change in resistance) is independent of the contact area size A over the range 4 μm2≤A≤1 mm2. © 2001 American Institute of Physics.
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Etch-induced surface modifications, utilizing an electron cyclotron resonance source, have been studied as a function of controllable etch parameters. InGaP was etched with BCl3 at a constant substrate temperature (100 °C) and bias voltage (−145 V) using microwave powers varying between 250 and 1000 W. The surface morphology, residual etch damage, and surface stoichiometry were strongly influenced by changes in ion flux. The etch-induced lattice damage and surface smoothness increased as the ion energy was elevated. Low ion flux etching resulted in an In-enriched P-depleted surface suggesting nonuniform desorption of InClx which gave rise to the surface roughness observed at the low microwave powers. The smooth surfaces, achieved at the higher microwave power levels, were attributed to either efficient sputter-assisted desorption of the InClx etch products or to InClx desorption via plasma-induced surface heating. Results of this study demonstrate that etching at microwave powers between 500 and 750 W induce low residual damage and smooth surfaces while maintaining a reasonable etch rate for device processing. © 1996 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2740-2744 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of the ferromagnetic Heusler alloy NiMnSb, of interest for magnetic multilayer devices because of their predicted half-metallic (i.e., 100% spin-polarized) transport properties, have been successfully deposited by rf magnetron sputtering from a single composite target. A novel combination of low argon gas pressure, low deposition rates, and moderate substrate temperatures (250–350 °C) are shown to result in high-quality, low-roughness polycrystalline films of the C1b-type crystal structure, with thicknesses as low as 100 Å, without the need for any post-deposition annealing. The structural properties of these films, determined by x-ray diffraction and atomic force microscopy are presented as a function of deposition conditions. The magnetic properties and resistivity are consistent with bulk MiMnSb, which suggests that they will be effective as spin-polarized conducting layers in multilayer thin-film structures. © 1997 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6316-6318 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Linear arrays of 15 nm thick, polycrystalline Co91Fe9 nanoelements have been fabricated using e-beam lithography, collimated sputtering and lift-off. The elements have widths of 0.17 and 0.25 μm, lengths from 0.5 to 4 μm, pointed ends, and center-to-center spacing of 0.5 μm. Characterization by magnetic force microscopy shows that in the virgin state these elements are single-domain and have magnetizations parallel to their long axes. The field at which an element switches its magnetization direction is shown to depend mainly on its width, and only slightly on its length. Fields of about 440 and 680 Oe are needed to switch completely the 0.25 and 0.17 μm structures, respectively. This separation in switching fields is adequate to allow elements of different widths to be switched independently. Also, magnetic force microscopy and SQUID magnetometry analysis show that a capping layer is necessary to protect the films from oxidation. Unprotected films show an altered hysteresis loop and their associated nanostructures are not consistently single-domain. © 2000 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4542-4544 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of current perpendicular (CPP) magnetoresistance (MR) on hybrid and exchange-biased spin valves allow determination of the layer anisotropy parameter β for ferromagnetic alloys, thus allowing testing of whether this CPP β is similar to values obtained from direct measurements on, and theoretical estimates for, dilute bulk ferromagnetic alloys. Of special interest are alloys where β is expected to be negative. In this article, we derive a value of β for a Ni97Cr3 alloy using such spin valves based upon permalloy. We confirm prior CPP-MR results that this β is negative, but our inferred value, β=−0.35±0.1, is closer to bulk and theoretical estimates. Our data thus provide new support for a unified picture of β in the CPP-MR and bulk alloys. We also derive a short spin-diffusion length in NiCr, lsf=3±1 nm. © 1999 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8610-8614 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements are presented of the 4.2 K current perpendicular specific resistances (area times resistance) and magnetoresistances of a series of Ni66Fe13Co21=Py′-based symmetric exchange-biased spin valves and Py′–Co hybrid spin valves. The behaviors of both kinds of Py′-based spin valves are similar to those for comparable Ni84Fe16=Py-based spin valves. The low temperature giant magnetoresistive parameters of Py′ must, thus, be similar to those for Py, suggesting that Py′ should be a viable alternative to Py for technological uses. © 2000 American Institute of Physics.
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  • 7
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the development of a novel technique designed to study dimensional effects in sputter-deposited magnetic materials and multilayer nanostructures without the need for post-deposition patterning. Wires with widths ranging from 40 to 1000 nm have been deposited on Si wafer substrates through a deposition mask fabricated by e-beam lithography. A bilevel resist masking scheme allows smooth, near vertical sidewall profiles, and the resulting structures can be exposed using a simple lift-off process. This process was used to fabricate test structures of Fe, Cu, and Co which were characterized by scanning electron microscopy, atomic force microscopy, and ac resistivity measurements from 3 to 300 K. While the wire structures are geometrically well defined, transport measurements reveal high crystalline defect densities which must be eliminated to fabricate low-dimensional magnetoresistive structures. © 1997 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2497-2499 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A remarkable increase in InGaP etch rate in electron cyclotron resonance BCl3 discharges is observed as the microwave power is increased from 250 W (etch rate ∼500 A(ring)/min) to 1000 W (etch rate ∼8000 A(ring)/min). The surface roughness measured by atomic force microscopy decreases from 36 nm at 250 W to 2 nm at 1000 W. The high ion flux incident on the InGaP at high microwave powers appears to remove InClx species by sputter-assisted desorption and prevents formation of the nonstoichiometric In-rich surfaces generally observed with Cl2-based dry etching using conventional reactive ion etching. © 1995 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2382-2384 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality thin-film of NiMnSb with the Clb crystal structure can be grown by low-power sputtering, at substrate temperatures as low as 250 °C. Structural and magneto-optical properties of these films are similar to those of bulk material prepared at high temperatures, which suggest that the predicted 100% spin-polarized behavior of NiMbSb may also be found in these films. The magneto-optical Kerr spectra have been measured, and they are found to be very sensitive to the preparation condition. The spectrum of the bulk alloy is closely reproduced only in the case of optimized films. This suggests that, in the optimized case, the electronic band structure is bulklike. © 1997 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Celestial mechanics and dynamical astronomy 35 (1985), S. 189-200 
    ISSN: 1572-9478
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The restricted problem in the vicinity of the Lagrangian point L4 is studied by finding a convergent binomial expansion of the disturbing function. Using a Hamiltonian formulation in Delaunay variables and removing the short-period terms a resonance problem (already considered by Giacaglia (1970) in an attempt of enlarging the Ideal Resonance) is obtained. It is shown that this extension is reducible to Garfinkel's ideal resonance in the libration region.
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