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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 99 (1995), S. 9051-9055 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1559-1561 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of ultrathin (〈100 Å) nitrided SiO2 on strained Si using microwave O2/N2O/NH3 plasma is reported. X-ray photoelectron spectroscopy results indicate a nitrogen-rich layer at the strained Si/SiO2 interface. The electrical properties of the nitrided oxides have been characterized using a metal–insulator–semiconductor structure. N2O plasma treatment of O2/NH3 nitrided SiO2 results in a lower insulator charge density (1.2×1011 cm−2) and a higher breakdown voltage. © 1998 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4472-4476 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polysilicon films have been deposited at a low temperature by single and dual ion beam sputtering. The structural and electrical properties of as-deposited and annealed films have been characterized by x-ray diffraction, secondary ion mass spectroscopy, atomic force microscopy, and Hall mobility measurements. The films are microcrystalline with average grain size ranging from 200 to 400 Å. The films exposed to a low-energy secondary ion beam during sputtering from a silicon target have exhibited smoother surface topography and different electrical behavior than the films deposited without any secondary ion bombardment. Some preliminary studies on ion beam sputtered SiGe films using a compound target are also presented. © 1998 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Global change biology 4 (1998), S. 0 
    ISSN: 1365-2486
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Energy, Environment Protection, Nuclear Power Engineering , Geography
    Notes: Folivorous insect responses to elevated CO2-grown tree species may be complicated by phytochemical changes as leaves age. For example, young expanding leaves in tree species may be less affected by enriched CO2-alterations in leaf phytochemistry than older mature leaves due to shorter exposure times to elevated CO2 atmospheres. This, in turn, could result in different effects on early vs. late instar larvae of herbivorous insects. To address this, seedlings of white oak (Quercus alba L.), grown in open-top chambers under ambient and elevated CO2, were fed to two important early spring feeding herbivores; gypsy moth (Lymantria dispar L.), and forest tent caterpillar (Malacosoma disstria Hübner). Young, expanding leaves were presented to early instar larvae, and older fully expanded or mature leaves to late instar larvae. Young leaves had significantly lower leaf nitrogen content and significantly higher total nonstructural carbohydrate:nitrogen ratio as plant CO2 concentration rose, while nonstructural carbohydrates and total carbon-based phenolics were unaffected by plant CO2 treatment. These phytochemical changes contributed to a significant reduction in the growth rate of early instar gypsy moth larvae, while growth rates of forest tent caterpillar were unaffected. The differences in insect responses were attributed to an increase in the nitrogen utilization efficiency (NUE) of early instar forest tent caterpillar larvae feeding on elevated CO2-grown leaves, while early instar gypsy moth larval NUE remained unchanged among the treatments. Later instar larvae of both insect species experienced larger reductions in foliage quality on elevated CO2-grown leaves than earlier instars, as the carbohydrate:nitrogen ratio of leaves substantially increased. Despite this, neither insect species exhibited changes in growth or consumption rates between CO2 treatments in the later instar. An increase in NUE was apparently responsible for offsetting reduced foliar nitrogen for the late instar larvae of both species.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1008-1012 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple single-source electron-beam evaporation technique has been used for the deposition of lead-lanthanum-zirconate-titanate (PLZT) thin films for silicon-based device applications. An optimized annealing condition has been established for the formation of crystalline perovskite phases. The effect of the bottom electrodes and the barrier layer on the growth of the films has been studied. Films with good dielectric and optical properties have been obtained under opt- imized conditions. Electrical properties of the films have been evaluated using metal–insulator–semiconductor and metal–insulator–metal structures. A moderately low interface trap density and very low leakage current density demonstrate the potential of the deposited films for device applications. © 1996 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6135-6140 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin oxide on strained Si1−xGex surface has been grown using a nonelectron cyclotron resonance mode microwave plasma at low temperatures (150–200 °C). An optimized post-oxidation and post-metal annealing cycle has resulted in very low fixed oxide charge density (1.78×1010/cm2) and moderately low interface trap density (2.9×1011/cm2 eV). A controlled in situ hydrogen-plasma treatment to Si1−xGex has been found to be useful in improving the electrical properties of the oxide. The high electron injection phenomena of metal oxide semiconductor capacitors has been used for charge trapping studies of sites normally present in the SiGe oxides. From the position and the extent of current ledge observed as a function of ramped gate voltage, the capture cross section and the total number of traps have been determined. © 1995 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 847-849 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dc characteristics of Si1−x−yGexCy P-channel metal–oxide–semiconductor field-effect transistors (PMOSFETs) were evaluated between room temperature and 77 K and were compared to those of Si and Si1−xGex PMOSFETs. The low-field effective mobility in Si1−x−yGexCy devices is found to be higher than that of Si1−xGex (grown in the metastable regime) and Si devices at low gate bias and room temperature. However, with increasing transverse fields and with decreasing temperatures, Si1−x−yGexCy devices show degraded performance. The enhancement at low gate bias is attributed to the strain stabilization effect of C. This application of Si1−x−yGexCy in PMOSFETs demonstrates potential benefits in the use of C for strain stabilization of the binary alloy. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2076-2078 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ge implantation followed by high-temperature solid phase epitaxy was used to form a relaxed substrate, eliminating need for the growth of relaxed Si1−xGex layers. Upon this film, a 2000 Å buffer layer of Si0.85Ge0.15 followed by a 200 Å strained Si layer was grown by ultrahigh-vacuum chemical vapor deposition. For comparison, unstrained Si epitaxial films and a 2000 Å thick film of Si0.85Ge0.15 (on unimplanted Si) followed by 200 Å of Si were used. n-channel metal–oxide–semiconductor transistors were fabricated and their dc characteristics were examined. Strained Si devices show a 17.5% higher peak linear μFE than control devices as a result of higher electron mobility in the strained Si channel. This work demonstrates a simple method for the formation of strained Si layers. © 1999 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 942-944 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Schottky barrier height and ideality factor of Pt on p-type strained Si (grown on a graded relaxed Si0.82Ge0.18 buffer layer) have been investigated in the temperature range (90–150 K) using the current-voltage characteristics and are found to be temperature dependent. While the ideality factor decreases with an increase in temperature, the barrier height increases. Simulation based on a drift-diffusion emission model has been used to explain the experimental results. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 66-68 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microwave plasma oxidation (below 200 °C) of strained Si on relaxed Si1−xGex buffer layers in N2O ambient is reported. The electrical properties of grown oxide have been characterized using a metal-oxide-semiconductor structure. Fixed oxide charge density and mid-gap interface state density are found to be 6×1010 cm−2 and 1.2×1011 cm−2 eV−1, respectively. The oxide on strained-Si samples has exhibited hole trapping behavior and moderately low interface state generation on constant current stressing. © 1997 American Institute of Physics.
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