ISSN:
1572-9605
Schlagwort(e):
Y-B-C-O films
;
buffer layers
;
in situ growth
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Elektrotechnik, Elektronik, Nachrichtentechnik
,
Physik
Notizen:
Abstract Thin films of YBa2Cu3O7−δ (YBCO) have been grownin situ on silicon single-crystal (100) substrate by using SrTiO3 as a buffer layer. The deposition has been carried out by on-axis rf magnetron sputtering method. The deposition condition have been optimized by studying the plasma characteristics and correlating them with the superconducting performance of the film. Films deposited at substrate temperature in the range of 680–700°C from stoichiometric YBCO targets in an argon + oxygen mixture (3∶1) are superconducting and showc-axis epitaxy. Compositional confirmation has been carried out using Rutherford backscattering. Scanning tunneling microscopy of the films reveal formation of well-defined layered structure with some defects in the initial stages ofin situ growth of the films. Films grown on SrTiO3 substrates have excellent crystalline quality (XRD), transition temperatureT c0=81 K and the critical current densityJ c 〉2×105 A/cm2 for unpatterned films at 77 K. On silicon substrates using buffer layers thein situ deposited YBCO films shows a higher transition width andT c0 is also slightly less (71 K).
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/BF00728306
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