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  • 2015-2019  (128)
  • 1995-1999  (106)
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  • 1
    Digitale Medien
    Digitale Medien
    Properties of SiGe oxides grown in a microwave oxygen plasma (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6135-6140 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Thin oxide on strained Si1−xGex surface has been grown using a nonelectron cyclotron resonance mode microwave plasma at low temperatures (150–200 °C). An optimized post-oxidation and post-metal annealing cycle has resulted in very low fixed oxide charge density (1.78×1010/cm2) and moderately low interface trap density (2.9×1011/cm2 eV). A controlled in situ hydrogen-plasma treatment to Si1−xGex has been found to be useful in improving the electrical properties of the oxide. The high electron injection phenomena of metal oxide semiconductor capacitors has been used for charge trapping studies of sites normally present in the SiGe oxides. From the position and the extent of current ledge observed as a function of ramped gate voltage, the capture cross section and the total number of traps have been determined. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.360556
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  • 2
    Digitale Medien
    Digitale Medien
    Electron beam deposited lead-lanthanum-zirconate-titanate thin films for silicon based device applications (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1008-1012 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A simple single-source electron-beam evaporation technique has been used for the deposition of lead-lanthanum-zirconate-titanate (PLZT) thin films for silicon-based device applications. An optimized annealing condition has been established for the formation of crystalline perovskite phases. The effect of the bottom electrodes and the barrier layer on the growth of the films has been studied. Films with good dielectric and optical properties have been obtained under opt- imized conditions. Electrical properties of the films have been evaluated using metal–insulator–semiconductor and metal–insulator–metal structures. A moderately low interface trap density and very low leakage current density demonstrate the potential of the deposited films for device applications. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.360887
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  • 3
    Digitale Medien
    Digitale Medien
    Ion assisted growth and characterization of polycrystalline silicon and silicon-germanium films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4472-4476 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Polysilicon films have been deposited at a low temperature by single and dual ion beam sputtering. The structural and electrical properties of as-deposited and annealed films have been characterized by x-ray diffraction, secondary ion mass spectroscopy, atomic force microscopy, and Hall mobility measurements. The films are microcrystalline with average grain size ranging from 200 to 400 Å. The films exposed to a low-energy secondary ion beam during sputtering from a silicon target have exhibited smoother surface topography and different electrical behavior than the films deposited without any secondary ion bombardment. Some preliminary studies on ion beam sputtered SiGe films using a compound target are also presented. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.367209
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  • 4
    Digitale Medien
    Digitale Medien
    Pt/p-strained-Si Schottky diode characteristics at low temperature (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 942-944 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The Schottky barrier height and ideality factor of Pt on p-type strained Si (grown on a graded relaxed Si0.82Ge0.18 buffer layer) have been investigated in the temperature range (90–150 K) using the current-voltage characteristics and are found to be temperature dependent. While the ideality factor decreases with an increase in temperature, the barrier height increases. Simulation based on a drift-diffusion emission model has been used to explain the experimental results. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.119696
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  • 5
    Digitale Medien
    Digitale Medien
    Oxidation of strained Si in a microwave electron cyclotron resonance plasma (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 217-219 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Electron cyclotron resonance plasma oxidation of strained Si on relaxed Si1−xGex buffer layers in O2 ambient at room temperature is reported. The electrical properties of grown oxide have been characterized and compared with thermally grown oxides using a metal-oxide semiconductor structure. At a low field, the accumulation of holes in the buried Si1−xGex layer, due to the type-II band offset, has been observed. The experimental results from thermally grown oxides have been compared with the simulation results obtained using a heterostructure Poisson solver. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.118370
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  • 6
    Digitale Medien
    Digitale Medien
    Heterostructure P-channel metal–oxide–semiconductor transistor utilizing a Si1−x−yGexCy channel (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 847-849 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The dc characteristics of Si1−x−yGexCy P-channel metal–oxide–semiconductor field-effect transistors (PMOSFETs) were evaluated between room temperature and 77 K and were compared to those of Si and Si1−xGex PMOSFETs. The low-field effective mobility in Si1−x−yGexCy devices is found to be higher than that of Si1−xGex (grown in the metastable regime) and Si devices at low gate bias and room temperature. However, with increasing transverse fields and with decreasing temperatures, Si1−x−yGexCy devices show degraded performance. The enhancement at low gate bias is attributed to the strain stabilization effect of C. This application of Si1−x−yGexCy in PMOSFETs demonstrates potential benefits in the use of C for strain stabilization of the binary alloy. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.123386
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  • 7
    Digitale Medien
    Digitale Medien
    Strained Si n-channel metal–oxide–semiconductor transistor on relaxed Si1−xGex formed by ion implantation of Ge (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2076-2078 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ge implantation followed by high-temperature solid phase epitaxy was used to form a relaxed substrate, eliminating need for the growth of relaxed Si1−xGex layers. Upon this film, a 2000 Å buffer layer of Si0.85Ge0.15 followed by a 200 Å strained Si layer was grown by ultrahigh-vacuum chemical vapor deposition. For comparison, unstrained Si epitaxial films and a 2000 Å thick film of Si0.85Ge0.15 (on unimplanted Si) followed by 200 Å of Si were used. n-channel metal–oxide–semiconductor transistors were fabricated and their dc characteristics were examined. Strained Si devices show a 17.5% higher peak linear μFE than control devices as a result of higher electron mobility in the strained Si channel. This work demonstrates a simple method for the formation of strained Si layers. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.123762
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  • 8
    Digitale Medien
    Digitale Medien
    Electrical properties of oxides grown on strained Si using microwave N2O plasma (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 66-68 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Microwave plasma oxidation (below 200 °C) of strained Si on relaxed Si1−xGex buffer layers in N2O ambient is reported. The electrical properties of grown oxide have been characterized using a metal-oxide-semiconductor structure. Fixed oxide charge density and mid-gap interface state density are found to be 6×1010 cm−2 and 1.2×1011 cm−2 eV−1, respectively. The oxide on strained-Si samples has exhibited hole trapping behavior and moderately low interface state generation on constant current stressing. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.119308
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  • 9
    Digitale Medien
    Digitale Medien
    Effect of electrode microstructure on leakage current in lead–lanthanum–zirconate–titanate multilayer capacitors (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1344-1346 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Lead–lanthanum–zirconate–titanate (PLZT) multilayer capacitors involving platinum bottom electrodes have been fabricated on a silicon nitride/silicon (SiN/Si) substrate system. Leakage current characteristics show strong dependence on the processing temperature of the bottom electrode. A drop in leakage current by five orders of magnitude has been observed for capacitor with platinum electrode deposited at room temperature. Scanning tunneling microscopy (STM) studies reveal significant differences in the microstructure of platinum films deposited at different substrate temperatures. Based on STM results, a correlation between the microstructure of the bottom electrode, space layer at PLZT/Pt interface, and the nucleation of PLZT has been suggested to explain this new observation. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.115929
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  • 10
    Digitale Medien
    Digitale Medien
    Microwave plasma nitridation of silicon dioxide on strained Si (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1559-1561 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Growth of ultrathin (〈100 Å) nitrided SiO2 on strained Si using microwave O2/N2O/NH3 plasma is reported. X-ray photoelectron spectroscopy results indicate a nitrogen-rich layer at the strained Si/SiO2 interface. The electrical properties of the nitrided oxides have been characterized using a metal–insulator–semiconductor structure. N2O plasma treatment of O2/NH3 nitrided SiO2 results in a lower insulator charge density (1.2×1011 cm−2) and a higher breakdown voltage. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.122204
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