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  • 1
    Electronic Resource
    Electronic Resource
    Tribological properties of chromium implanted silicon nitride ceramics correlated with microstructure (1997)
    Springer
    Applied physics 65 (1997), S. 281-286 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 81.40; 61.80; 62
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: 3 N4 ceramic after chromium implantation were investigated for the dependence on implantation energy between 200 keV and 3 MeV at a fixed fluence of 1017 ions/cm2. The wear of the modified material is reduced for a load of 2 N independent of ion energy accompanied by a slight increase of the friction coefficient. At higher loads only high-energy implantations result in improved wear behaviour. Structural investigations show the absence of any new phases formed by ion implantation. All energies result in an amorphous layer. For lower energies this amorphous layer reaches up to the surface whereas at higher energies it is covered by still-crystalline but damaged material. The observed wear behaviour can be explained with the amorphization of the near surface region and the stress generated by the volume swelling of the amorphous layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050579
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  • 2
    Electronic Resource
    Electronic Resource
    Strain and SiC particle formation in silicon implanted with carbon ions of medium fluence studied by synchrotron x-ray diffraction (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4184-4187 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Implantation of C ions with an energy of 195 keV into Si wafers heated up to 800 °C results in an elastic distortion of the Si host lattice and in the formation of crystalline SiC particles or their prestages depending on implantation dose and temperature. Synchrotron x-ray diffraction at the Rossendorf beamline in Grenoble was used to reveal phase formation and the correlated lattice strain changes. Only a Si lattice deformation without growth of SiC was observed if the fluence did not exceed 5×1015 C ions/ cm2. After implantation of C ions up to 4×1017 cm−2 at a temperature of 500 °C, agglomerations of Si–C and an altered state of Si lattice deformation are found. By implantation of 4×1017 ions/cm2 at 800 °C, particles of the 3C–SiC (β-SiC) phase grow, which are aligned with the Si matrix. They are aligned in such a way with the Si matrix that the cubic crystallographic axes of matrix and particles coincide with an accuracy of 3°. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371344
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  • 3
    Electronic Resource
    Electronic Resource
    Multimodal impurity redistribution and nanocluster formation in Ge implanted silicon dioxide films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3215-3217 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The depth distribution of Ge implanted into thermally grown SiO2 films has been studied after annealing using transmission electron microscopy, Rutherford backscattering spectrometry, and x-ray diffraction. At annealing temperatures above 900 °C a significant redistribution of the as-implanted Ge profile was found. Crystalline Ge nanoclusters embedded in the SiO2 matrix are formed within a cluster band with well defined boundaries. The evolution of nanoclusters can be explained qualitatively by a model based on nucleation, growth and Ostwald ripening of Ge precipitates. Besides, chemical and interface reactions lead to the formation of additional Ge peaks near the surface and at the Si/SiO2 interface. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120294
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  • 4
    Electronic Resource
    Electronic Resource
    ROBL – a CRG beamline for radiochemistry and materials research at the ESRF (1999)
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 6 (1999), S. 1076-1085 
    Details
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: The paper describes the Rossendorf beamline (ROBL) built by the Forschungszentrum Rossendorf at the ESRF. ROBL comprises two different and independently operating experimental stations: a radiochemistry laboratory for X-ray absorption spectroscopy of non-sealed radioactive samples and a general purpose materials research station for X-ray diffraction and reflectometry mainly of thin films and interfaces modified by ion beam techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0909049599010663
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  • 5
    Electronic Resource
    Electronic Resource
    Investigation of Fe-Mg-Alloys Produced by Ion Implantation (1998)
    Springer
    Hyperfine interactions 112 (1998), S. 165-168 
    Details
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Iron and magnesium are insoluble elements with each other and there is no phase diagram. However, it is possible to produce artificial alloys by ion implantation, in this study by iron implantation into magnesium. Samples are investigated by conversion electron Moessbauer spectroscopy, Auger electron spectroscopy and x-ray diffraction. While at low doses gaussian shaped iron profiles and paramagnetic doublets as Mössbauer spectra are obtained, the iron concentration reaches at the highest dose 90 at.-% in maximum and the Mössbauer spectrum shows a dominant ferromagnetic fraction. The x-ray diffraction pattern let conclude that a dilated α-iron lattice is formed. Microhardness of all samples is clearly increased due to the implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1011021618496
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  • 6
    Electronic Resource
    Electronic Resource
    Alloying by high dose ion implantation of iron into magnesium and aluminium (1998)
    Springer
    Hyperfine interactions 113 (1998), S. 391-401 
    Details
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Alloys of the systems Fe–Al (mixable over the whole concentration range) and Fe–Mg (insoluble with each other) were produced by implantation of Fe ions into Al and Mg, respectively. The implantation energy was 200 keV and the ion doses ranged from 1 × 1014 to 9 × 1017cm-2The obtained implantation profiles were determined by Auger electron spectroscopy depth profiling. Maximum iron concentrations reached were up to 60 at.% for implantation into Al and 94 at.% for implantation into Mg. Phase analysis of the implanted layers was performed by conversion electron Mössbauer spectroscopy and X‐ray diffraction. For implantation into Mg, two different kinds of Mössbauer spectra were obtained: at low doses paramagnetic doublets indicating at least two different iron sites and at high doses a dominant ferromagnetic six‐line‐pattern with a small paramagnetic fraction. The X‐ray diffraction pattern concluded that in the latter case a dilated αiron lattice is formed. For implantation into Al, the Mössbauer spectra were doublet structures very similar to those obtained at amorphous Fe–Al alloys produced by rapid quenching methods. They also indicated at least two different main iron environments. For the highest implanted sample a ferromagnetic six‐line‐pattern with magnetic field values close to those of Fe3Al appeared.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1012648321780
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  • 7
    Electronic Resource
    Electronic Resource
    Nanometre-sized silver halides entrapped in SiO2 matrices (1998)
    Springer
    Journal of materials science 33 (1998), S. 155-159 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The formation of nanocrystals after implantation of silver alone as well as together with the halogen ions Cl, Br and I into a SiO2 layer of about 100 nm was studied by X-ray diffraction and transmission electron microscopy. The co-implantation of Ag and Cl or Br results in the formation of cubic AgX crystals which are stable in size under annealing. The co-implantation of Ag and I as well as single Ag implantation result in Ag crystallites, which grow under annealing. The annealing procedure causes a redistribution of the particles within the layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004310100054
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  • 8
    Electronic Resource
    Electronic Resource
    Investigation of the atomic interdiffusion and phase formation in ion beam-irradiated thin Cu-Al and Ag-Al multilayers by in situ RBS and XRD (1998)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 26 (1998), S. 160-174 
    Details
    ISSN: 0142-2421
    Keywords: Cu-Al ; Ag-Al ; interdiffusion ; ion beam bombardment ; in situ RBS ; phase formation ; PACS nos 61.66.Dk, 61.80.Jh, 61.82.Bg and 68.35.Fx ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Ion beam-induced interdiffusion and phase formation processes in thin Cu-Al and Ag-Al multilayers were investigated with in situ RBS and X-ray diffraction (XRD), respectively. The metal layers were deposited by evaporation on polished glassy carbon and single-crystal silicon substrates. In order to initiate interdiffusion, the specimens were bombarded with high-current 2.0 MeV 4He+ ion beams. Depending on the metal layer system, different interdiffusion and phase formation behaviour were observed (phases formed after irradiation: Al2Cu, Al4Cu9 and Ag2Al). Fast interdiffusion was measured for the Ag-Al and Cu-Al systems deposited on glassy carbon, whereas much lower interdiffusion was observed for the same multilayered systems deposited on 〈100〉 Si, even though the multilayers of each system were deposited at the same time. In addition, the interdiffusion was significantly slower in Cu-Al multilayers than in Ag-Al multilayers. © 1998 John Wiley & Sons, Ltd.
    Additional Material: 12 Ill.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Depth profile analysis: STEM-EDX vs. RBS (1998)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 26 (1998), S. 359-366 
    Details
    ISSN: 0142-2421
    Keywords: X-ray technique for structure analysis ; depth profiling ; nanocluster ; self-diffusion in metals ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Results obtained from scanning transmission electron microscopy combined with energy-dispersive X-ray imaging (EDX) and from Rutherford backscattering spectroscopy (RBS) of implanted and multilayered structures are compared in order to demonstrate the depth profiling capabilities of both analysis methods, especially at interfaces. Typical samples for dilute and concentrated systems are compared. The dilute system is represented by Ge nano-clusters in an amorphous SiO2 matrix on a Si substrate produced by ion implantation and subsequent annealing. The concentrated system of alternating Ag-Al multilayers (typical thickness ∽200 nm) is produced by evaporation on Si substrates under high vacuum conditions. A significant advantage of STEM-EDX is the two-dimensional mapping and depth profiling of light and heavier elements in heavy-Z substrates (depth scale in nanometres) without the lack of a deteriorating depth resolution at increasing depth, as happens in RBS. © 1998 John Wiley & Sons, Ltd.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Phase formation in ion beam bombarded Al-Au multilayers using high-current 2.0 MeV 4He+ ions (1998)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 26 (1998), S. 650-658 
    Details
    ISSN: 0142-2421
    Keywords: phase formation ; ion beam bombardment ; Al-Au ; multilayers ; XRD ; RBS ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: High-current ion beam bombardment (IBB) was performed to interdiffuse Al-Au multilayers produced by evaporation on flat substrates of carbon, silicon and gold (typical thickness of each layer 150 nm, packages consist of 2 and 2.5 periods). During IBB with 2 MeV 4He+ ions, the Al-Au interdiffusion was measured simultaneously with Rutherford backscattering (RBS). A complete mixing of the multilayers close to the surface is achieved within a few minutes and observed by variations in the Al-Au ratios. X-ray diffraction (XRD) was used to study the phase formation in detail. In as-deposited specimens only the reflections of both metals are detected, whereas after IBB the main intermetallic phase is AlAu2. Small amounts of further Al-Au phases are observed additionally in dependence on the substrate type. It was deduced from complementary RBS and XRD analyses that intermixing in such multilayered systems is thermally dominated. © 1998 John Wiley & Sons, Ltd.
    Additional Material: 7 Ill.
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