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  • 1995-1999  (224)
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  • 1
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Langmuir 11 (1995), S. 716-717 
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Marine biology 133 (1999), S. 65-68 
    ISSN: 1432-1793
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract The Kumamoto oyster Crassostrea sikamea is distinguished from the closely related Pacific oyster C. gigas by concordant differences in 16S rDNA, allozymes, and a one-way gametic incompatibility. After repeated failures to find this oyster in its native habitat, we speculated in 1994 that “the Kumamoto oyster may be extinct in Japan”. In September 1996, we sampled small, deep-cupped oysters from the Ariake Sea and typed these for 16S rDNA and ITS-1 DNA markers previously shown to be diagnostic for the three most common oysters in the Ariake Sea, C. gigas, C. sikamea and  C. ariakensis. Our earlier suggestion of the demise of  C. sikamea proved incorrect. Of the 256 oysters sampled, 181 (71%) were  C. gigas, 53 (21%) were C. sikamea, and 22 (9%) were  C. ariakensis; no interspecific hybrids were observed. The distributions of C. sikamea and  C. ariakensis are clumped in the Ariake Sea:  C. sikamea occurs on the eastern and northern shores,  C. ariakensis occurs only in the northern part. These results emphasize the value of molecular markers for discriminating these morphologically plastic species both in the field and in aquaculture.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1432-0630
    Keywords: PACS: 61.18.-j; 78.30.Na; 81.05.Tp
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Mono-sized single-wall carbon nanotubes were formed in one-dimensional channels of AlPO4-5 single crystal (AFI) by pyrolysis of tripropylamine (TPA). Raman spectra have been measured for the TPA-AFI crystals thermally processed at different conditions. TPA molecules are carbonized at 400 °C, and carbon nanotubes were formed at 500 °C or above. The radial-breathing mode, which is special for carbon nanotube geometry, was observed. Three Raman-active modes with symmetry A 1g, E 1g, and E 2g were identified by detailed symmetrical analysis for the polarized-Raman spectra.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Structural optimization 16 (1998), S. 128-135 
    ISSN: 0934-4373
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The present paper studies the reliability-based structural optimization of the civil engineering in the seismic zone. The objective is to minimize the sum of construction material cost and the expected failure loss under severe earthquake, which is obtained by the sum of the products of the failure probability and its failure losses for the important failure modes. The set of constraints includes the deterministic constraints, and the constraints based on structural reliability – the reliability index constraints of structural element failure for the serviceability state under minor earthquake and the failure probability of the structural system for the ultimate limit state under severe earthquake. By introducing the load roughness index, the structural system reliability computation under hazard load can be greatly simplified, which is approximately determined by its weakest failure mode. Finally, the numerical example of high rising shear RC frame is calculated.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3823-3826 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical injection effects and all-optical set-reset operations in two-segment strained multiquantum-well (MQW) distributed feedback (DFB) bistable lasers were experimentally investigated. The optical bistable characteristics under detuned optical injection, of strained MQW DFB bistable lasers, show the effect of the residual Fabry–Perot side modes of the DFB structures; optimizing the input wavelength and the input power is suggested for applications. The switching properties of dynamic optical set-reset operations with pulsed optical injection were reported, which appear to be related to the optical bistable characteristics under cw optical injection; however, the switching transients are found to be essential to full understanding of these switching properties. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Grass and forage science 52 (1997), S. 0 
    ISSN: 1365-2494
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Effects of different grazing frequencies and intensities on herbage production (on both a unit pasture and individual plant basis) and on persistence of chicory (Cichorium intybus L. cv. Grasslands Puna) were studied at Palmerston North, New Zealand (latitude 40°23′S) from November 1994 to November 1995. Three experiments were conducted on the same chicory stand, sown on 12 May 1994. The main grazing experiment had two grazing intensities, hard-lax grazing (50- to 100-mm stem stubble to mid-January, and thereafter 100- to 150-mm stem stubble) and lax grazing (100- to 150-mm stem stubble), and three grazing frequencies (1-, 2- or 4-week intervals). A subsidiary plant survival experiment compared the survival of 120 marked plants in ungrazed and grazed treatments. A late autumn grazing experiment examined the effects on plant persistence in the following spring. The greatest herbage mass (leaf + stem) resulted from the 4-week grazing frequency [9640 ± 874 kg dry matter (DM) ha−1], in which stem mass was reasonably low (1270 ± 410 kg DM ha−1), but was significantly higher in the 4-week grazing frequency than 1- and 2-week grazing frequencies (P 〈 0·01). Grazing intensity had no significant effect except on the average stem mass of individual plants when the hard-lax intensity gave a lower stem mass (P 〈 0·01). There were no interactions between grazing frequency and intensity in herbage mass. Plant density declined by 35% over the growing season with the decline unaffected by grazing intensity or frequency during the season. Grazing in late autumn resulted in approximately 27% less plants the following spring. It was concluded that grazing management through the growing season cannot be used to improve persistence without compromising leaf growth rate, but that avoidance of grazing late autumn will improve the persistence of chicory.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8482-8487 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si δ-doped GaAs grown by metal organic vapor phase epitaxy (MOVPE) is characterized using magnetotransport measurements in tilted magnetic fields. Angular dependence of the longitudinal magnetoresistance (Rxx) vs the magnetic field (B) traces in tilted magnetic fields is used to examine the existence of a quasi-two-dimensional electron gas. The subband electron densities (ni) are obtained applying fast Fourier transform (FFT) analysis to the Rxx vs B trace and using mobility spectrum (MS) analysis of the magnetic field dependent Hall data. Our results show that (1) the subband electron densities remain roughly constant when the tilted magnetic field with an angle 〈30° measured from the Si δ-doped plane normal is ramped up to 13 T; (2) FFT analysis of the Rxx vs B trace and MS analysis of the magnetic field dependent Hall data both give the comparable results on subband electron densities of Si δ-doped GaAs with low δ-doping concentration, however, for Si δ-doped GaAs with very high δ-doping concentration, the occupation of the lowest subbands cannot be well resolved in the MS analysis; (3) the highest subband electron mobility reported to date of 45 282 cm2/s V is observed in Si δ-doped GaAs at 77 K in the dark; and (4) the subband electron densities of Si δ-doped GaAs grown by MOVPE at 700 °C are comparable to those grown by MBE at temperatures below 600 °C. A detailed study of magnetotransport properties of Si δ-doped GaAs in the parallel magnetic fields is then carried out to further confirm the subband electronic structures revealed by FFT and MS analysis. Our results are compared to theoretical calculation previously reported in literature. In addition, influence of different cap layer structures on subband electronic structures of Si δ-doped GaAs is observed and also discussed. © 1996 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3554-3559 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using trimethylaluminum (TMAl) or trimethylgallium (TMGa) as a doping precursor, carbon δ-doped AlxGa1−xAs has been grown in metalorganic vapor phase epitaxy. Compared to TMGa, TMAl exhibits very high carbon δ-doping efficiency. The best hole profile of carbon δ-doped Al0.3Ga0.7As grown at 580 °C using TMAl as a doping precursor has a peak hole density of 1.6×1019 cm−3 for a full width at half-maximum of 85 A(ring) with most of the incorporated carbon atoms being electrically active. When TMGa is used as the doping precursor, the hole density of carbon δ-doped AlxGa1−xAs significantly increases with an increase of the Al mole fraction. By comparison, the use of TMAl almost induces independence of the hole density on the Al mole fraction. The hole density of carbon δ-doped Al0.3Ga0.7As weakly increases when reducing the δ-doping temperature regardless of the doping precursors. The hole density of carbon δ-doped Al0.3Ga0.7As grown at 580 °C is proportionally associated with the moles of TMGa or TMAl totally input during a δ-doping step. Using heavily carbon δ-doped layers in Al0.3Ga0.7As, a carbon δ-doped pipi doping superlattice possessing a bulk-doped-like hole profile with an average hole density of 1.1×1019 cm−3 is therefore demonstrated as an alternative with unique advantages over other conventional carbon bulk-doping approaches. © 1996 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3546-3548 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A very significant Zn evaporation from nongrowing AlxGa1−xAs surface during a post-δ-doping purge step was observed in growth of Zn δ-doped AlxGa1−xAs (x〈0.65) by low pressure metal organic vapor phase epitaxy using dimethylzinc as a doping precursor. A δ-doping sequence different from the normal "purge-doping-purge'' is therefore proposed to minimize the Zn evaporation. Using this δ-doping sequence, the dopant memory effect was investigated and the best hole profile of Zn δ-doped GaAs (Al0.35Ga0.65As) was obtained, having a full width at half-maximum of 7.0 nm for a peak concentration of 1.1×1020 cm−3 (13 nm for 4.8×1018 cm−3). It was found that the growth temperature significantly influences the hole concentration of Zn δ-doped GaAs and the hole concentration decreases and the hole profile width increases with increasing Al content of Zn δ-doped AlxGa1−xAs. © 1995 American Institute of Physics.
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