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  • 1
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 115 (2001), S. 5883-5890 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The complex of HF2− and H2O is studied using B3LYP, MP2, and QCISD methods. Energetics, geometries, and vibrational frequencies of the equilibrium structure and two transition states are calculated using 6-311++G(d,p), 6-311++G(2d,2p), and 6-311++G(2df,2pd) basis sets. For the equilibrium structure there is a hydrogen bond between one of the F atoms of HF2− and one of the H atoms of H2O. The two transition states are only about 0.5 kcal/mol higher. The HF2−–H2O equilibrium structure is planar and, at the B3LYP/6-311++G(2df,2pd) level, the F–H–O bond angle is nearly linear at 174.4° and the F–O distance is 2.59 Å. With zero point energy and counterpoise correction, the binding energy is 14.9 kcal/mol and the strong hydrogen bond of HF2− is weakened by 11.3 kcal/mol (25%). In HF2− the experimental F–F distance is 2.28 Å and the F–H–F bond angle is 180°. The most intense IR vibration is the F–H–F asymmetric stretch at 1331 cm−1. In HF2− the calculated F–F distance is 2.30 Å and in the HF2−–H2O equilibrium structure the F–H distance for the hydrogen bonded F atom is longer by 0.13 Å but the F–H distance for the free F atom is shorter by 0.10 Å and the F–F distance is only 0.03 Å longer. The F–H–F bond angle is very close to linear at 179.4°. The most intense IR vibration remains the F–H–F asymmetric stretch, blueshifted by 648 cm−1. The F–H–O asymmetric stretch is also an intense IR vibration, redshifted by 729 cm−1 from the O–H local mode stretch for H2O. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 114 (2001), S. 1534-1538 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Alkaline earth metal halide radical dimers, (MX)2 (M=Be, Mg, Ca and X=F, Cl) have not yet been observed experimentally and their existence could be doubted since MX is known to disproportionate in the bulk. We study the (MX)2 species using DFT and MP2 methods and show that they are either thermodynamically or kinetically stable with respect to various reactions including disproportionation. Energetics, geometries, and vibrational frequencies of singlet and triplet equilibrium structures and some transition states are calculated. The ground states of (MX)2 are all singlet except (CaF)2 which is triplet and, with the possible exception of (CaF)2, the ground states have a rhombic structure in which the X atoms are shared equally with each M atom. The ionization potentials of the (MX)2 species are significantly lower than those of the corresponding MX species suggesting that their chemistry may be significantly different. © 2001 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3823-3826 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical injection effects and all-optical set-reset operations in two-segment strained multiquantum-well (MQW) distributed feedback (DFB) bistable lasers were experimentally investigated. The optical bistable characteristics under detuned optical injection, of strained MQW DFB bistable lasers, show the effect of the residual Fabry–Perot side modes of the DFB structures; optimizing the input wavelength and the input power is suggested for applications. The switching properties of dynamic optical set-reset operations with pulsed optical injection were reported, which appear to be related to the optical bistable characteristics under cw optical injection; however, the switching transients are found to be essential to full understanding of these switching properties. © 1996 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4810-4812 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two types of wavelength switching are observed experimentally in two-segment 1.55 μm InGaAsP/InP ridge waveguide multiquantum-well distributed-feedback (DFB) lasers. The first type occurs between the longitudinal modes on the opposite sides of the DFB stop band, while the second type occurs on the same side of the stop band. The physical mechanism is correlated to a slight difference of the effective grating period between the two inhomogeneously injected laser segments. © 1995 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2641-2647 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxide traps generated by reactive ion etching are studied using a pulsed femtosecond laser. The second harmonic generation (SHG) signal from the Si/SiO2 interface is sensitive to charged traps in the oxide. The time evolution of the SHG signal indicates that positive traps predominate. The angular dependence of the polarized signal shows that the electric field generated by the oxide traps alters the symmetry of the sample. The damage is greatest for an oxide thickness of 13 nm (for a plasma dc bias of 300 V). Thicker oxides have smaller SHG signals, presumably because the Fowler–Nordheim tunneling currents induced by plasma charging of the oxide surface are smaller. Very thin oxides also exhibit reduced damage. The time dependent SHG signals depend on the temperature of the samples; these data provide information on the trapping and detrapping of substrate electrons by oxide holes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4734-4740 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed the onset of degradation of bipolar transistor characteristics under high current forward stress at room temperature. The observed degradation may be attributed to interface states generated next to the sidewall oxide at the emitter base junction in a self-aligned bipolar transistor. Individual steps in the generation and annealing kinetics may be resolved. The sensitivity of the device to the extrinsic base doping profile is demonstrated and a model based on the generation of hot carriers by Auger recombination and bond breaking by these hot carriers is proposed.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1016-1021 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reverse-bias pulsed deep-level transient spectroscopy (RDLTS) has recently been used for studies of electric field-enhanced emission from a deep-level defect. The sensitivity, spatial, and temperature resolutions of this technique are investigated and compared with those of DLTS. The electric field strength in a narrow region, where the transient capacitance signal comes from, can be accurately controlled by using RDLTS. The calculated results indicate that there is an optimal operating condition given by a range of emission pulse widths and heights. This operating condition is given for the best compromise of the temperature and spatial resolutions.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3506-3508 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The high-electric-field-induced trapped oxide charge and neutral oxide traps of a metal–oxide–semiconductor field-effect transistor gate oxide are investigated by surface second-harmonic light generation (SHG). The electric-field dependence of the SHG intensity is sensitive to the charge trapped at the interface between the oxide and the silicon substrate. The time dependence of the SHG intensity probes the characteristics of the neutral trap sites in the oxide. © 1999 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2721-2723 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Base current degradation mechanisms in carbon-doped AlGaAs/GaAs heterojunction bipolar transistors (HBTs) under forward current stress is investigated in transistors with a thin AlGaAs surface protection ledge. Although the base current in HBTs with ledge is relatively stable compared to that in HBTs without ledge, the base current increase in some of these passivated HBTs is still noticeable. An increase of surface recombination current in the region surrounding the AlGaAs ledge is identified as a primary degradation mechanism. To alleviate the base current instability, several passivated emitter-base junction fabrication processes are recommended. © 1995 American Institute of Physics.
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