Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
87 (2000), S. 7876-7879
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Thick epitaxial layers of AlSb(Si) and AlSb(Be) were grown by molecular beam epitaxy and characterized by variable-temperature Hall/van der Pauw measurements. Si is shown to be predominantly an acceptor in AlSb, with an energy level 33±4 meV above the top of the valence band. Be is also an acceptor, with an energy level 38±4 meV above the top of the valence band. Be is a robust doping source for p-AlSb for carrier densities ranging from 1015 to 1019 cm−3. Background impurity levels in AlSb can be assessed by measuring the transport properties of lightly doped AlSb(Be) layers. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.373470
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