Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
68 (1996), S. 3248-3250
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Epitaxial scandium films have been grown on c-axis-oriented wurtzite GaN. The films are highly ordered, adherent, and reflective. For substrate temperatures in the range 640–780 °C an interfacial reaction yields a ScN layer whose thickness increases with temperature, consistent with Sc diffusion as the rate limiting step. Electrical contacts fabricated from the Sc/ScN/GaN films exhibit a 1.0 eV barrier height on n-type GaN. The Sc films, which represent a class of ductile materials, may constitute a compliant substrate for overgrowth of GaN. © 1996 American Institute of Physics
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116563
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