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  • 2000-2004  (176)
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  • 1
    Electronic Resource
    Electronic Resource
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Physiology 62 (2000), S. 51-77 
    ISSN: 0066-4278
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Medicine , Biology
    Notes: Abstract Atrial fibrillation (AF) was recognized and studied extensively in the early twentieth century, but many fundamental aspects of the arrhythmia were poorly understood until quite recently. It is now recognized that AF can be initiated by a variety of mechanisms that share the ability to cause extremely rapid, irregular atrial electrical activity. Once initiated, AF causes alterations in atrial electrical properties (electrical remodeling), including both rapid functional changes and slower alterations in ion channel gene expression, which promote the maintenance of AF and facilitate reinitiation of the arrhythmia should it terminate. Electrical remodeling decreases the atrial refractory period in a heterogeneous way, thus decreasing the size and stability of potential functional atrial reentry waves and promoting multiple-circuit reentry. Whatever the initial cause of AF, electrical remodeling is likely to be a final common pathway that ultimately supervenes. Recent advances in understanding ion channel function, regulation, and remodeling at the molecular level have allowed for a much more detailed appreciation of the basic determinants of AF. Improvements in the clinical management of AF will inevitably follow the recent advances in our understanding of its detailed pathophysiology.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5997-6001 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is important to understand the distribution of recoil-implanted atoms and the impact on device performance when ion implantation is performed at a high dose through surface materials into single crystalline silicon. For example, in ultralarge scale integration impurity ions are often implanted through a thin layer of screen oxide and some of the oxygen atoms are inevitably recoil implanted into single-crystalline silicon. Theoretical and experimental studies have been performed to investigate this phenomenon. We have modified the Monte Carlo ion implant simulator, UT-Marlowe (B. Obradovic, G. Wang, Y. Chen, D. Li, C. Snell, and A. F. Tasch, UT-MARLOWE Manual, 1999), which is based on the binary collision approximation, to follow the full cascade and to dynamically modify the stoichiometry of the Si layer as oxygen atoms are knocked into it. CPU reduction techniques are used to relieve the demand on computational power when such a full cascade simulation is involved. Secondary ion mass spectrometry (SIMS) profiles of oxygen have been carefully obtained for high dose As and BF2 implants at different energies through oxide layers of various thicknesses, and the simulated oxygen profiles are found to agree very well with the SIMS data. © 2001 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4337-4338 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The adhesive force (AF) and the electron work function (EWF) of different crystallographic planes of Cu were determined, with the aim of exploring the potential application of the Kelvin method in characterizing the adhesion of solid surfaces especially those in nano/microdevices. It was demonstrated that there was a close correlation between the EWF and AF, and both the parameters were dependent on the surface atomic arrangement. This study indicates that the EWF is a parameter that could be used to characterize the adhesion behavior of a surface. © 2001 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3881-3883 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The shape evolution of Ge/Si(001) islands grown by ultrahigh vacuum chemical vapor deposition were investigated by atomic force microscopy at different deposition rates. We find that, at low deposition rates, the evolution of islands follows the conventional pathway by which the islands form the pyramid islands, evolve into dome islands, and dislocate at a superdome shape with increasing coverage. While at a high deposition rate of 3 monolayers per minute, the dome islands evolve towards the pyramids by a reduction of the contact angle. The presence of the atomic intermixing between the Ge islands and Si substrate at high deposition rate is responsible for the reverse evolution. © 2001 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3621-3623 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin Pb films supported by Al film were made by using cold-rolling and ion-beam thinning techniques. The morphological instability of the Pb film under electron-beam irradiation was investigated by means of in situ transmission electron microscopy observations. It has been found that under electron-beam irradiation, Pb films with an incoherent Pb/Al interface spheroidized into Pb particles, but those with a semicoherent Pb/Al interface were stable in morphology. The morphological stability of thin films depends on the microstructure and the thermodynamic property of the interphase boundary. A critical interfacial energy for the spheroidization of thin films was determined based on a thermodynamics analysis. © 2001 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 391-393 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A constant amount of Ge was deposited on strained GexSi1−x layers of approximately the same thickness but with different alloy compositions, ranging from x=0.06 to x=0.19. From their atomic-force-microscopy images, we found that both the size and density of Ge islands increased with the Ge composition of the strained layer. By conservation of mass, this implies that these islands must incorporate material from the underlying strained layer. © 2000 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3266-3268 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Utilizing the containerless electrostatic levitation facility at NASA/MSFC, we were able to undercool the Ni59Nb41 (atomic) alloy by 210 K which was 160° farther than the results of previous flight experiments. Undercoolings were clustered around 200 K during the repeated melting–freezing cycles on a single sample. Prior to this work, a metastable liquid separation had been presumed to limit the undercooling of this alloy. However, microstructural observations have revealed that undercooling was limited by crystal nucleation. © 2000 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4183-4185 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present experimental results of complex susceptibility, static magnetization, magnetic relaxation, specific heat, and electrical resistivity measurements on an intermetallic compound Nd2AgIn3. The results indicated that Nd2AgIn3 undergoes a spin-glass transition at a freezing temperature Tf=12.6 K accompanied with the formation of short-range antiferromagnetic order. The mechanism of formation of spin-glass state in Nd2AgIn3 is different from that in diluted metallic spin-glass or uranium intermetallic compound. The existences of frustrated moments due to the triangles of nearest neighbors in Nd atomic layers and randomly distributed Ruderman–Kittle–Kasuya–Yosida interactions may be responsible for the spin glass state formed in Nd2AgIn3. © 2001 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 437-439 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Organic electroluminescent devices with a structure of ITO/ploy (9-vinylcarbazole)/tris (8-hydroxyquinoline) aluminum (Alq3)/Mg:Ag are fabricated at different substrate temperatures (77, 298, and 438 K) during Alq3 deposition. It is found that the surface morphologies of Alq3 thin films greatly affect the I–V characteristics of the devices by the contact area between metal cathode and light-emitting layer. There is an increase in the luminous efficiency of the devices in the order 77 K〈298 K〈438 K. We attribute this trend to different structures of Alq3 thin films. © 2001 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2852-2854 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ge/Si multilayer structures with a bimodal distribution of the island spacing in the first layer have been investigated by atomic-force microscopy and transmission electron microscopy. Besides the vertical alignment, some oblique alignments of stacked islands are observed. The presence of the elastic interaction between islands is responsible for the oblique alignment of stacked islands. © 2000 American Institute of Physics.
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