ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A constant amount of Ge was deposited on strained GexSi1−x layers of approximately the same thickness but with different alloy compositions, ranging from x=0.06 to x=0.19. From their atomic-force-microscopy images, we found that both the size and density of Ge islands increased with the Ge composition of the strained layer. By conservation of mass, this implies that these islands must incorporate material from the underlying strained layer. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126986