ISSN:
1573-4854
Keywords:
porous silicon
;
electropolishing
;
anodic silicon dissolution
;
probe beam deflection technique
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Probe beam deflection (PBD) technique was used for the in-situ characterization of p-Si anodic dissolution in fluoride containing acidic media in the regimes of porous Si formation, electropolishing and sustained electrochemical oscillations. When trends in deflectometric signal differed from those of current density, PBD could provide complementary informations on the occurrence of chemical reactions at the electrode. A model is proposed for the estimation of oxide thickness based on the instantaneous formation and dissolution rates in galvanostatic conditions. Results point to the existence of different oxide phases at the p-Si/electrolyte interface.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1009675328730
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