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  • 2000-2004  (58)
  • 1995-1999  (60)
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3431-3433 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray and UV photoelectron spectroscopy measurements of Cu(InGa)Se2 thin films grown on Mo coated soda-lime glass show segregation from the substrate and formation of two different Na species. One of these species is also identified after deliberate deposition of metallic Na. Moreover, the adsorption (or segregation) of this species reduces the native oxide SeO2, while the other, reacted Na species coexists with SeO2. Small amounts of Na (≤0.05 A(ring)) induce a band bending and reduce the surface dipole. These findings reveal a positive influence of segregated Na on the morphology and electrical characteristics of Na-enriched films, improving the overall performance of the solar cells. © 1996 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2411-2420 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of humidity on the electronic structure of Na-containing polycrystalline Cu(In,Ga)Se2 thin films on soda-lime glass substrates has been investigated by x-ray and UV photoemission as well as by Auger electron spectroscopy. Different interactions between coadsorbed Na, H2O, and the Cu(In,Ga)Se2 surface are revealed at low temperatures and upon annealing at room temperature. Both, reversible and irreversible interactions such as a H2O-induced reduction of the Na surface content and the formation of a Na–O–Cu(In,Ga)Se2 complex are observed. Our findings can be correlated with the influence of ambient conditions on Cu(In,Ga)Se2 solar cell adsorbers and demonstrate the importance of adequate encapsulation of Na-containing Cu(In,Ga)Se2-based thin-film solar cells. © 1997 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2200-2202 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct deposition of Mo microstructures on Si is demonstrated by photolytic decomposition of condensed Mo(CO)6 using the aperture-limited, high-intensity radiation from an undulator at the BESSY storage ring. A particular advantage of the instrument, a new photon-induced scanning Auger microscope, is the possibility of quasisimultaneous exposure (writing) and analysis employing photoemission (PES) or x-ray induced Auger spectroscopy (XAES) with sufficient energy resolution for detection of chemical differences. The present spatial resolution is 20–30 μm (for PES and writing) and 3 μm (for XAES), but this will be improved by adding focusing mirrors. © 1995 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1022-1024 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polar (100) surfaces of commercial CdTe and Cd(Zn)Te single crystals were prepared by ion sputtering and annealing at different temperatures and under Te flux, Cd flux, or in ultrahigh vacuum. Various surface reconstructions with high structural order were obtained. Soft x-ray photoemission investigations of the Cd and Te 3d surface core-level shifts were employed to derive the surface termination, revealing Cd-terminated surfaces for most preparations and various reconstructions. The results suggest that sputter/annealing cycles are suitable for the preparation of highly ordered and uniformly terminated substrates for semiconductor heterojunctions on CdTe and Cd(Zn)Te without the need of an additional buffer layer. © 1997 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4482-4484 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By combining ultraviolet and x-ray photoelectron spectroscopy with inverse photoemission spectroscopy, we find that the conduction-band alignment at the CdS/CuInSe2 thin-film solar-cell heterojunction is flat (0.0±0.2 eV). Furthermore, we observe a valence-band offset of 0.8±0.2 eV. The electronic level alignment is dominated by (1) an unusually large surface band gap of the CuInSe2 thin film (1.4 eV), (2) by a reduced surface band gap of the CdS overlayer (2.2 eV) due to intermixing effects, and (3) by a general influence of the intermixing on the chemical state near the interface. © 2001 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1093-1095 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that a thin organic interfacial layer of 3,4,9,10 perylenetetracarboxylic dianhydride (PTCDA) can be utilized to improve the band alignment of N,N′-di-(3-methylphenyl)N,N′diphenyl-4,4′diaminobiphenyl (TPD) films on [indium–tin–oxide (ITO)] (InSnO) substrates in, e.g., organic electroluminescent devices. A photoemission study of the highest occupied molecular orbital (HOMO) and vacuum level position as a function of the organic overlayer thickness reveals that due to chemisorptive bonding a thin PTCDA interlayer results in a reduced barrier between the Fermi level of ITO and the HOMO of TPD. Furthermore we detect a new molecular state 0.6 eV below the Fermi level at the PTCDA/ITO interface. Both effects are expected to improve the hole injection from the ITO anode into the TPD hole transport layer, e.g., in organic light emitting devices. © 2000 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1867-1869 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For the heterovalent system ZnSe/GaAs(100), we have investigated the influence of a Te pretreatment of the substrate on the electronic structure of the interface by photoelectron spectroscopy. We have paid special attention to correctly determine the valence band maximum in a k-resolved fashion, including the use of photon energies which enable excitation at the Γ point. We find that the Te pretreatment leads to a decrease of the valence band discontinuity as large as 0.3 eV. From photoemission depth profiling we conclude that some Te atoms remain localized at the interface, thus causing the change of the valence band offset while others float on the ZnSe surface, probably acting as surfactants. © 2001 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 3313-3320 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The Xα scattered-wave (Xα-SW) method was used to calculate the C K x-ray absorption (NEXAFS) spectrum of propane which previously was used as a model system for larger saturated hydrocarbons. The absorption resonances below the ionization threshold are analyzed in detail and characterized with respect to their valence and/or Rydberg-character. The shape resonances above the ionization threshold were investigated by calculating the eigenchannel wave functions involved in the formation of the resonances. The applicability of the results to the spectra of long alkane chains is studied, in particular for the determination of molecular orientation from their polarization dependence. © 1998 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 63 (1996), S. 565-576 
    ISSN: 1432-0630
    Keywords: 68.55.13 ; 71.20.11 ; 82.65.M
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Large and symmetric organic molecules (〉200 amu) can form highly-ordered adsorbate layers and thin films when they are deposited by vacuum sublimation on clean reactive surfaces. In such cases covalent bonding often occurs via the molecular π-system leading to a parallel orientation of the adsorbate as shown for oligothiophenes and PTCDA on Ag(1 1 1). A proper choice of the substrate and/or a preadsorbate may also cause an upright orientation with bonding via a reactive group of the molecule (example: NDCA/Ni(1 11)). Most of the used molecules yield long-range ordered monolayers with large, almost defect-free domains. The stronger the bonding and the smaller the molecule the more likely is the formation of commensurate superstructures which indicate site-specific adsorption even for such large molecules as PTCDA or EC4T. Organic epitaxy is discussed and shown for a particular system, PTCDA on Ag(1 1 1), for which the structure of the monolayer is nearly identical to that of theβ-modification of PTCDA crystals, whereas on other substrates (e.g. Si(1 1 1), Ge(1 0 0)) a disordered interface and hence no true epitaxy is found.
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 63 (1996), S. 565-576 
    ISSN: 1432-0630
    Keywords: PACS: 68.55.B; 71.20.H; 82.65.M
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  Large and symmetric organic molecules (〉200 amu) can form highly-ordered adsorbate layers and thin films when they are deposited by vacuum sublimation on clean reactive surfaces. In such cases covalent bonding often occurs via the molecular π-system leading to a parallel orientation of the adsorbate as shown for oligothiophenes and PTCDA on Ag(1 1 1). A proper choice of the substrate and/or a preadsorbate may also cause an upright orientation with bonding via a reactive group of the molecule (example: NDCA/Ni(1 1 1)). Most of the used molecules yield long-range ordered monolayers with large, almost defect-free domains. The stronger the bonding and the smaller the molecule the more likely is the formation of commensurate superstructures which indicate site-specific adsorption even for such large molecules as PTCDA or EC4T. Organic epitaxy is discussed and shown for a particular system, PTCDA on Ag(1 1 1), for which the structure of the monolayer is nearly identical to that of the β-modification of PTCDA crystals, whereas on other substrates (e.g. Si(1 1 1), Ge(1 0 0)) a disordered interface and hence no true epitaxy is found.
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