Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
78 (2001), S. 1867-1869
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
For the heterovalent system ZnSe/GaAs(100), we have investigated the influence of a Te pretreatment of the substrate on the electronic structure of the interface by photoelectron spectroscopy. We have paid special attention to correctly determine the valence band maximum in a k-resolved fashion, including the use of photon energies which enable excitation at the Γ point. We find that the Te pretreatment leads to a decrease of the valence band discontinuity as large as 0.3 eV. From photoemission depth profiling we conclude that some Te atoms remain localized at the interface, thus causing the change of the valence band offset while others float on the ZnSe surface, probably acting as surfactants. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1358366
|
Location |
Call Number |
Expected |
Availability |
