Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
79 (2001), S. 4482-4484
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
By combining ultraviolet and x-ray photoelectron spectroscopy with inverse photoemission spectroscopy, we find that the conduction-band alignment at the CdS/CuInSe2 thin-film solar-cell heterojunction is flat (0.0±0.2 eV). Furthermore, we observe a valence-band offset of 0.8±0.2 eV. The electronic level alignment is dominated by (1) an unusually large surface band gap of the CuInSe2 thin film (1.4 eV), (2) by a reduced surface band gap of the CdS overlayer (2.2 eV) due to intermixing effects, and (3) by a general influence of the intermixing on the chemical state near the interface. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1428408
Permalink
|
Location |
Call Number |
Expected |
Availability |