ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In this work, we have investigated triple and innovative multiple stacked contacts onto ptypeSiC in order to evaluate whether or not there is any improvement in morphology or specificcontact resistivity. The stacked metal contacts are based on Al, Ti and Ni with the specific contactresistivity measured at a low value of 5.02×10-6'cm2 for an Al(100 nm)/Ti(100 nm)/Al(10 nm)(where a “/” indicates the deposition sequence) triple stacked metal contact. XRD microstructuralanalysis and SEM measurements have been carried out and it has been discovered that the contacts,which formed the compound Ti3SiC2 at the metal/SiC interface, more readily display low-resistanceohmic characteristics after a post deposition anneal. Although the same amount of Ti (100 nm intotal) has been deposited closer to the metal/SiC interface, none of the multiple stacked structuresdisplayed ohmic behaviour after a post deposition anneal
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.697.pdf
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