ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
4H-SiC implanted with high dose of phosphorus has been shown to exhibit lower sheetresistance than 4H-SiC implanted with high dose of nitrogen. In this paper, we have implantedvarious doses (1x1014cm-2, 2x1014cm-2, 1x1015cm-2 and 4x1015cm-2) of phosphorus into 4H-SiC inorder to extract the ionization energy of phosphorus in 4H-SiC as a function of the dopingconcentration. Variable temperature Hall effect measurements were performed in the temperaturerange from 60-600K. Least square fits using the charge neutrality equation with two donor levelswere used to extract the ionization energies and donor concentrations from the measured data. Theionization energies for both, the hexagonal (53meV, 49meV and 26meV) and the cubic (109meV,101meV and 74meV) site decreased as the donor concentration (5x1018cm-3, 9.8x1018cm-3 and3.4x1019cm-3) increased
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.597.pdf
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