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  • 1
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Self-organization in many solution-processed, semiconducting conjugated polymers results in complex microstructures, in which ordered microcrystalline domains are embedded in an amorphous matrix. This has important consequences for electrical properties of these materials: charge transport is ...
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  • 2
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The main advantages of using soluble semiconductive polymers in microelectronic devices are ease of processing and mechanical flexibility. Here we describe an active-matrix display with 64 × 64 pixels, each driven by a thin-film transistor with a solution-processed polymer semiconductor. ...
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 108-110 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technology has been developed to make all polymer integrated circuits. It involves reproducible fabrication of field-effect transistors in which the semiconducting, conducting and insulating parts are all made of polymers. The fabrication on flexible substrates uses spin-coating of electrically active precursors and patternwise exposure of the deposited films. In the whole process stack integrity is maintained. Vertical interconnects are made mechanically. As a demonstrator functional 15-bit programmable code generators are fabricated. These circuits still operate when the foils are sharply bent. Due to the limited number of process steps the technology is potentially inexpensive. © 1998 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 393-402 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: PbZrxTi1−xO3 films have been grown heteroepitaxially onto (001)SrTiO3 and SrRuO3/(001)SrTiO3 by organometallic chemical vapor deposition. As a start, the microstructure of PbZrxTi1−xO3 films on (001)SrTiO3 was studied as a function of the zirconium fraction, x. Rutherford backscattering spectrometry, including channeling experiments, and transmission electron microscopy have shown that the microstructure is dominated by the crystal structure of the PbZrxTi1−xO3. In the case of tetragonal PbZrxTi1−xO3 the films may contain a-axis oriented regions. These regions have not been observed for films with a composition giving a rhombohedral unit cell. Despite the rather large mismatch of rhombohedral PbZrxTi1−xO3 with the (001)SrTiO3, values as low as 4% for the minimum channeling yield have been obtained. For a rhombohedral film the ferroelectric properties have been measured. To this end a single crystalline PbZr0.8Ti0.2O3 film was grown onto (001)SrTiO3 provided with a heteroepitaxial SrRuO3 electrode grown by pulsed-laser deposition. A heteroepitaxial top electrode was grown onto the PbZrxTi1−xO3 using the same technique. The channeling minimum yield of the heteroepitaxial stack was 11%. The hysteresis loop saturates already at 1 V. Endurance up to 1012 cycles was observed without severe degradation of the ferroelectric properties. © 1996 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3537-3542 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of a Schottky barrier between an eutectic (Ga,In) alloy and a highly doped thiophene oligomer is followed as a function of time using current density–voltage and capacitance–voltage measurements. Within 1 h, the diode characteristics change from almost nonrectifying, leaky behavior into a rectification ratio of 104 with a considerably reduced leakage current. Measurements and energy band diagram calculations show that the depletion width increases with time due to a decrease in the ionizable acceptor density of the semiconductor at the Schottky interface. This is probably caused by a chemical reaction between the in-diffusing metals and the doped oligomer. © 1997 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2136-2138 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal-insulator-semiconductor field-effect transistors have been constructed with pentacene as the active semiconductor. The pentacene is processed by spin coating from a soluble precursor. A simple thermal conversion yields transistors with carrier mobilities as high as 9×10−3 cm2 V−1 s−1 and current modulations of the order of 105. Depletion of charge is essential to the device operation. Data for an invertor exhibiting voltage amplification are presented. © 1996 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6289-6294 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conductivity and field-effect mobility measurements using metal-insulator-semiconductor field-effect-transistor devices and acceptor density measurements using metal-insulator- semiconductor (MIS) diodes are presented. The measurements were made on thin polymer films of the organic semiconductor, poly(β'-dodecyloxy-α,α',-α',α‘terthienyl), which were doped to different conductivities using 2,3-dichloro-5,6-dicyano-1,4-benzoquinone (DDQ) as an oxidizing agent. It is found that both the field-effect mobility and the conductivity of these films increases superlinearly upon doping while the transistor amplification, the on/off ratio, decreases. Acceptor densities as obtained from MIS diode measurements are in close agreement with the bulk charge density as calculated from the DDQ content. However, the product of this bulk charge density, field-effect mobility, and the elementary charge e is a factor of 100 larger than the polymer conductivity. This indicates that the average mobility for charge carriers in the bulk is considerably lower than the field-effect mobility. It is considered that the bulk charge carriers are trapped by the Coulomb interaction with their parent charge compensating counter-ions, whereas charges in accumulation have no associated counter-ions and, therefore, are more mobile. © 1995 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6507-6509 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The texture of YBa2Cu3O7 thin films on (100) SrTiO3, grown by in situ laser ablation, was investigated by x-ray diffraction. The surface morphology is smooth with only 105 cm−2 particulates of about 0.1 μm in diameter. High-resolution x-ray diffraction shows that the c-axis of YBa2Cu3O7 is epitaxially aligned with the [001] direction of SrTiO3 irrespective of the misorientation. The {018} pole figure of YBa2Cu3O7 shows a fourfold symmetry which indicates that the films are ordered with respect to the substrate lattice. Moreover, the alignment in the {018} pole figure of the (220) reflections of SrTiO3 and the (018) reflections of YBa2Cu3O7 indicates that over the whole surface of the film the a- and b-axes of YBa2Cu3O7 are aligned along the [100] and [010] direction of SrTiO3. The epitaxial nature of the films, the low density of particulates, and the lack of interdiffusion as concluded from secondary ion mass spectrometry measurements, allows for the preparation of heteroepitaxial stacks containing high-Tc superconductors.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1124-1126 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Threshold voltage instabilities of all-organic thin-film transistors are investigated as a function of stress time and stress bias. The dominant effect is a positive threshold shift for negative gate bias stress which is explained by mobile ions drifting in the insulator when a gate field is applied. Trapping of charge carriers at the semiconductor–insulator interface plays only a minor role. Furthermore, we investigate the stress behavior of a basic logic element, an inverter. In comparison to a single transistor, we observe improved stability which arises from partial compensation of the parametric shifts during operation. © 2001 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1487-1489 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we demonstrate the integration of all-polymer field-effect transistors in fully functional integrated circuits with operating frequencies of several kHz. One of the key items is an approach to incorporate low-Ohmic vertical interconnects compatible with an all-polymer approach. Inverters, NAND gates, and ring oscillators with transistor channel lengths down to 1 μm have been constructed. Inverters show voltage amplification at moderate biases and pentacene seven-stage ring oscillators show switching frequencies of a few kHz. The potential to realize large integrated circuits is demonstrated by a 15 bit code generator circuit using several hundreds of devices. The proposed concept was evaluated for three solution-processable organic semiconductors. © 2000 American Institute of Physics.
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